페이지 3 - EPC 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
EPC2025	EPC	TRANS GAN 300V 150MO BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고3,520
EPC2033ENGR	EPC	TRANS GAN 150V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고2,768
EPC2031ENGR	EPC	TRANS GAN 60V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,792
EPC2029ENGRT	EPC	TRANS GAN 80V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,984
EPC8007ENGR	EPC	TRANS GAN 40V 3.8A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,272
EPC2024ENGR	EPC	TRANS GAN 40V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 19mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,432
EPC2021ENG	EPC	TRANS GAN 80V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,752
EPC2020ENGR	EPC	TRANS GAN 60V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고5,840
EPC2033ENGRT	EPC	TRANS GAN 150V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고14,268
EPC2034ENGRT	EPC	TRANS GAN 200V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고27,486
EPC2030ENGRT	EPC	MOSFET NCH 40V 31A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고49,674
EPC2039	EPC	TRANS GAN 80V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고1,616,796
EPC2040	EPC	MOSFET NCH 15V 3.4A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30 mOhm @ 1.5A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고381,288
EPC2037	EPC	TRANS GAN 100V 550MOHM BUMPED DI FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	패키지: -	재고249,630
EPC2038	EPC	TRANS GAN 100V 2.8OHM BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고1,891,686
EPC2023ENGR	EPC	TRANS GAN 30V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고14,196
EPC2015	EPC	TRANS GAN 40V 33A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	패키지: Die	재고22,938
EPC8002	EPC	TRANS GAN 65V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고607,644
EPC2040ENGRT	EPC	TRANS GAN 15V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 6V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 28 mOhm @ 1.5A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고19,596
EPC2032	EPC	TRANS GAN 100V 48A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고70,512
EPC2001	EPC	TRANS GAN 100V 25A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	패키지: Die	재고223,170
EPC8009	EPC	TRANS GAN 65V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고23,238
EPC2001C	EPC	TRANS GAN 100V 36A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	패키지: Die	재고630,336
EPC2014C	EPC	TRANS GAN 40V 10A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	패키지: Die	재고824,184
EPC2105ENG	EPC	TRANS GAN 2N-CH 80V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,968
EPC2101ENGRT	EPC	TRANS GAN ASYMMETRICAL HALF BRID FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고3,200
EPC2105ENGRT	EPC	MOSFET 2NCH 80V 9.5A DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고46,992
EPC2108ENGRT	EPC	TRANS GAN 3N-CH BUMPED DIE FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	패키지: 9-VFBGA	재고23,700
EPC2106ENGRT	EPC	TRANS GAN 2N-CH 100V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고230,418
GAN FET BOOK-WIPO	EPC	TEXT WIRELESS POWER HANDBOOK Accessory Type: Guide For Use With/Related Products: -	패키지: -	재고2,304

EPC2025

EPC

TRANS GAN 300V 150MO BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고3,520

EPC2033ENGR

EPC

TRANS GAN 150V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고2,768

EPC2031ENGR

EPC

TRANS GAN 60V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,792

EPC2029ENGRT

EPC

TRANS GAN 80V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,984

EPC8007ENGR

EPC

TRANS GAN 40V 3.8A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,272

EPC2024ENGR

EPC

TRANS GAN 40V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,432

EPC2021ENG

EPC

TRANS GAN 80V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,752

EPC2020ENGR

EPC

TRANS GAN 60V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고5,840

EPC2033ENGRT

EPC

TRANS GAN 150V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고14,268

EPC2034ENGRT

EPC

TRANS GAN 200V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고27,486

EPC2030ENGRT

EPC

MOSFET NCH 40V 31A DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고49,674

EPC2039

EPC

TRANS GAN 80V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고1,616,796

EPC2040

EPC

MOSFET NCH 15V 3.4A DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 1.5A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고381,288

EPC2037

EPC

TRANS GAN 100V 550MOHM BUMPED DI

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

패키지: -

재고249,630

EPC2038

EPC

TRANS GAN 100V 2.8OHM BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고1,891,686

EPC2023ENGR

EPC

TRANS GAN 30V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고14,196

EPC2015

EPC

TRANS GAN 40V 33A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (11-Solder Bar)
Package / Case: Die

패키지: Die

재고22,938

EPC8002

EPC

TRANS GAN 65V 2.7A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고607,644

EPC2040ENGRT

EPC

TRANS GAN 15V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 6V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 28 mOhm @ 1.5A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고19,596

EPC2032

EPC

TRANS GAN 100V 48A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고70,512

EPC2001

EPC

TRANS GAN 100V 25A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (11-Solder Bar)
Package / Case: Die

패키지: Die

재고223,170

EPC8009

EPC

TRANS GAN 65V 2.7A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고23,238

EPC2001C

EPC

TRANS GAN 100V 36A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (11-Solder Bar)
Package / Case: Die

패키지: Die

재고630,336

EPC2014C

EPC

TRANS GAN 40V 10A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die

패키지: Die

재고824,184

EPC2105ENG

EPC

TRANS GAN 2N-CH 80V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,968

EPC2101ENGRT

EPC

TRANS GAN ASYMMETRICAL HALF BRID

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고3,200

EPC2105ENGRT

EPC

MOSFET 2NCH 80V 9.5A DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고46,992

EPC2108ENGRT

EPC

TRANS GAN 3N-CH BUMPED DIE

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

패키지: 9-VFBGA

재고23,700

EPC2106ENGRT

EPC

TRANS GAN 2N-CH 100V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고230,418

GAN FET BOOK-WIPO

EPC

TEXT WIRELESS POWER HANDBOOK

Accessory Type: Guide
For Use With/Related Products: -

패키지: -

재고2,304