페이지 2 - EPC 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
EPC8004ENGR	EPC	TRANS GAN 40V 4.4A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 125 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,360
EPC2818	EPC	TRANS GAN 150V 12A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,568
EPC2815	EPC	TRANS GAN 40V 33A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고5,776
EPC2030ENGR	EPC	TRANS GAN 40V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,672
EPC2019ENG	EPC	TRANS GAN 200V 8.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고2,288
EPC2016	EPC	TRANS GAN 100V 11A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,448
EPC2012CENGR	EPC	TRANS GAN 200V 5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (4-Solder Bar) Package / Case: Die	패키지: Die	재고5,504
EPC2023ENG	EPC	TRANS GAN 30V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고19,944
EPC2047ENGRT	EPC	TRANS GAN 200V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고2,672
EPC2016C	EPC	TRANS GAN 100V 18A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,704
EPC2046ENGRT	EPC	TRANS GAN 200V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고14,520
EPC2020	EPC	TRANS GAN 60V 90A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고72,738
EPC2045ENGRT	EPC	TRANS GAN 100V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고198,594
EPC2014	EPC	TRANS GAN 40V 10A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	패키지: Die	재고269,130
EPC2037ENGR	EPC	TRANS GAN 100V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고43,776
EPC2010C	EPC	TRANS GAN 200V 22A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (7-Solder Bar) Package / Case: Die	패키지: Die	재고109,092
EPC8010	EPC	TRANS GAN 100V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고52,914
EPC2019	EPC	TRANS GAN 200V 8.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고279,426
EPC2012C	EPC	TRANS GAN 200V 5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (4-Solder Bar) Package / Case: Die	패키지: Die	재고196,962
EPC2036	EPC	TRANS GAN 100V 1A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고5,327,856
EPC2104ENG	EPC	TRANS GAN 2N-CH 100V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고4,224
EPC2102ENG	EPC	TRANS GAN 2N-CH 60V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고7,440
EPC2101ENG	EPC	TRANS GAN 2N-CH 60V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고4,704
EPC2107ENGRT	EPC	TRANS GAN 3N-CH 100V BUMPED DIE FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	패키지: 9-VFBGA	재고4,496
EPC2100ENGRT	EPC	MOSFET ARRAY 2N-CH 30V DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고51,732
EPC2111ENGRT	EPC	TRANS GAN ASYMMETRICAL HALF BRID FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고56,010
EPC2110ENGRT	EPC	TRANS GAN 2N-CH 120V BUMPED DIE FET Type: 2 N-Channel (Dual) Common Source FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고221,688
EPC2107	EPC	MOSFET 3N-CH 100V 9BGA FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	패키지: 9-VFBGA	재고201,390
EPC2108	EPC	MOSFET 3N-CH 60V/100V 9BGA FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	패키지: 9-VFBGA	재고207,576
EPC2112ENGRT	EPC	200 V GAN IC FET DRIVER Output Configuration: Low Side Applications: DC-DC Converters Interface: On/Off Load Type: Inductive Technology: MOSFET (Metal Oxide) Rds On (Typ): 32 mOhm Current - Output / Channel: 10A Current - Peak Output: 40A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 150°C (TJ) Features: - Fault Protection: - Mounting Type: Surface Mount Package / Case: 10-XFBGA Supplier Device Package: 10-BGA (2.9x1.1)	패키지: 10-XFBGA	재고3,024

EPC8004ENGR

EPC

TRANS GAN 40V 4.4A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 125 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,360

EPC2818

EPC

TRANS GAN 150V 12A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,568

EPC2815

EPC

TRANS GAN 40V 33A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고5,776

EPC2030ENGR

EPC

TRANS GAN 40V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,672

EPC2019ENG

EPC

TRANS GAN 200V 8.5A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고2,288

EPC2016

EPC

TRANS GAN 100V 11A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,448

EPC2012CENGR

EPC

TRANS GAN 200V 5A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (4-Solder Bar)
Package / Case: Die

패키지: Die

재고5,504

EPC2023ENG

EPC

TRANS GAN 30V 60A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고19,944

EPC2047ENGRT

EPC

TRANS GAN 200V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고2,672

EPC2016C

EPC

TRANS GAN 100V 18A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,704

EPC2046ENGRT

EPC

TRANS GAN 200V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고14,520

EPC2020

EPC

TRANS GAN 60V 90A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고72,738

EPC2045ENGRT

EPC

TRANS GAN 100V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고198,594

EPC2014

EPC

TRANS GAN 40V 10A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die

패키지: Die

재고269,130

EPC2037ENGR

EPC

TRANS GAN 100V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고43,776

EPC2010C

EPC

TRANS GAN 200V 22A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (7-Solder Bar)
Package / Case: Die

패키지: Die

재고109,092

EPC8010

EPC

TRANS GAN 100V 2.7A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고52,914

EPC2019

EPC

TRANS GAN 200V 8.5A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고279,426

EPC2012C

EPC

TRANS GAN 200V 5A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (4-Solder Bar)
Package / Case: Die

패키지: Die

재고196,962

EPC2036

EPC

TRANS GAN 100V 1A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고5,327,856

EPC2104ENG

EPC

TRANS GAN 2N-CH 100V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고4,224

EPC2102ENG

EPC

TRANS GAN 2N-CH 60V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고7,440

EPC2101ENG

EPC

TRANS GAN 2N-CH 60V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고4,704

EPC2107ENGRT

EPC

TRANS GAN 3N-CH 100V BUMPED DIE

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

패키지: 9-VFBGA

재고4,496

EPC2100ENGRT

EPC

MOSFET ARRAY 2N-CH 30V DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고51,732

EPC2111ENGRT

EPC

TRANS GAN ASYMMETRICAL HALF BRID

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고56,010

EPC2110ENGRT

EPC

TRANS GAN 2N-CH 120V BUMPED DIE

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고221,688

EPC2107

EPC

MOSFET 3N-CH 100V 9BGA

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

패키지: 9-VFBGA

재고201,390

EPC2108

EPC

MOSFET 3N-CH 60V/100V 9BGA

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

패키지: 9-VFBGA

재고207,576

EPC2112ENGRT

EPC

200 V GAN IC FET DRIVER

Output Configuration: Low Side
Applications: DC-DC Converters
Interface: On/Off
Load Type: Inductive
Technology: MOSFET (Metal Oxide)
Rds On (Typ): 32 mOhm
Current - Output / Channel: 10A
Current - Peak Output: 40A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: -
Fault Protection: -
Mounting Type: Surface Mount
Package / Case: 10-XFBGA
Supplier Device Package: 10-BGA (2.9x1.1)

패키지: 10-XFBGA

재고3,024