|
|
EPC |
TRANS GAN 200V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고4,400 |
|
|
|
EPC |
TRANS GAN 100V 48A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,960 |
|
|
|
EPC |
TRANS GAN 80V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고6,336 |
|
|
|
EPC |
TRANS GAN 100V 25A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,288 |
|
|
|
EPC |
TRANS GAN 100V 2.5A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,912 |
|
|
|
EPC |
TRANS GAN 65V 2A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고3,120 |
|
|
|
EPC |
TRANS GAN 65V 2.9A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 32.5V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 275 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고6,592 |
|
|
|
EPC |
TRANS GAN 40V 2.7A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 20V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 325 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고5,568 |
|
|
|
EPC |
TRANS GAN 200V 22A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (7-Solder Bar)
- Package / Case: Die
|
패키지: Die |
재고4,864 |
|
|
|
EPC |
TRANS GAN 80V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,144 |
|
|
|
EPC |
TRANS GAN 80V 6.8A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고4,608 |
|
|
|
EPC |
TRANS GAN 100V 6A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (5-Solder Bar)
- Package / Case: Die
|
패키지: Die |
재고6,336 |
|
|
|
EPC |
TRANS GAN 200V 12A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고53,100 |
|
|
|
EPC |
TRANS GAN 200V 3A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 100V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고29,382 |
|
|
|
EPC |
MOSFET N-CH 100V 1.7A DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 50V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고2,944 |
|
|
|
EPC |
TRANS GAN 150V 12A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고52,842 |
|
|
|
EPC |
MOSFET NCH 40V 60A DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 19mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고28,356 |
|
|
|
EPC |
TRANS GAN 40V 2.7A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고44,658 |
|
|
|
EPC |
TRANS GAN 200V 48A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고17,928 |
|
|
|
EPC |
TRANS GAN 150V 7MOHM BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고31,656 |
|
|
|
EPC |
TRANS GAN 100V 3MOHM BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고48,558 |
|
|
|
EPC |
TRANS GAN 80V 90A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고25,038 |
|
|
|
EPC |
TRANS GAN 80V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고32,184 |
|
|
|
EPC |
MOSFET NCH 60V 31A DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
패키지: Die |
재고55,554 |
|
|
|
EPC |
TRANS GAN 2N-CH 80V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고2,768 |
|
|
|
EPC |
TRANS GAN 2N-CH 30V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고5,296 |
|
|
|
EPC |
MOSFET ARRAY 2N-CH 60V DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
패키지: Die |
재고6,752 |
|
|
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EPC |
MOSFET 2NCH 100V 23A DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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패키지: Die |
재고24,582 |
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EPC |
TRANS GAN SYM HALF BRDG 80V
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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패키지: Die |
재고46,464 |
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EPC |
150 V GAN IC DUAL FET DRIVER
- Output Configuration: Low Side
- Applications: DC-DC Converters
- Interface: On/Off
- Load Type: Inductive
- Technology: MOSFET (Metal Oxide)
- Rds On (Typ): 70 mOhm
- Current - Output / Channel: 5A
- Current - Peak Output: 18A
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: -
- Fault Protection: -
- Mounting Type: Surface Mount
- Package / Case: 10-VFBGA
- Supplier Device Package: 10-BGA (2.9x1.1)
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패키지: 10-VFBGA |
재고14,064 |
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