페이지 7 - Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 380
페이지  7/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot ZXMC4559DN8TA
Diodes Incorporated

MOSFET N/P-CH 60V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고865,488
Logic Level Gate
60V
3.6A, 2.6A
55 mOhm @ 4.5A, 10V
1V @ 250µA (Min)
20.4nC @ 10V
1063pF @ 30V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMP3A16DN8TA
Diodes Incorporated

MOSFET 2P-CH 30V 4.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고455,772
Logic Level Gate
30V
4.2A
45 mOhm @ 4.2A, 10V
1V @ 250µA (Min)
29.6nC @ 10V
1022pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMC4A16DN8TA
Diodes Incorporated

MOSFET N/P-CH 40V 4A/3.6A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고719,124
Logic Level Gate
40V
4A, 3.6A
50 mOhm @ 4.5A, 10V
1V @ 250mA (Min)
17nC @ 10V
770pF @ 40V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMTH6010LPDQ-13
Diodes Incorporated

MOSFET 2NCH 60V 13.1A POWERDI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고5,232
Standard
60V
13.1A (Ta), 47.6A (Tc)
11 mOhm @ 20A, 10V
3V @ 250µA
40.2nC @ 10V
2615pF @ 30V
2.8W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMHC10H170SFJ-13
Diodes Incorporated

MOSFET 2N/2P-CH 100V DFN5045-12

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: V-DFN5045-12
패키지: 12-VDFN Exposed Pad
재고5,888
Standard
100V
2.9A, 2.3A
160 mOhm @ 5A, 10V
3V @ 250µA
9.7nC @ 10V
1167pF @ 25V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
12-VDFN Exposed Pad
V-DFN5045-12
hot ZXMN3A06DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고620,076
Logic Level Gate
30V
4.9A
35 mOhm @ 9A, 10V
1V @ 250µA (Min)
17.5nC @ 10V
796pF @ 25V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMNH6022SSDQ-13
Diodes Incorporated

MOSFET 2NCH 60V 7.1A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,128
Standard
60V
7.1A, 22.6A
27 mOhm @ 5A, 10V
3V @ 250µA
32nC @ 30V
2127pF @ 25V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMT3011LDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 8A V-DFN3030-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type K)
패키지: 8-VDFN Exposed Pad
재고6,592
Standard
30V
8A, 10.7A
20 mOhm @ 6A, 10V
3V @ 250µA
13.2nC @ 10V
641pF @ 15V
1.9W
-55°C ~ 155°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type K)
hot ZXMN3G32DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고748,836
Logic Level Gate
30V
5.5A
28 mOhm @ 6A, 10V
3V @ 250µA
10.5nC @ 10V
472pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMHC3025LSDQ-13
Diodes Incorporated

MOSFET 2N/2P-CH 30V 8SOIC

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,256
Standard
30V
6A, 4.2A
25 mOhm @ 5A, 10V
2V @ 250µA
11.7nC @ 10V
590pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMP2060UFDB-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: 6-UDFN Exposed Pad
재고3,424
Standard
20V
3.2A
90 mOhm @ 2.9A, 4.5V
1.4V @ 250µA
18nC @ 8V
881pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot DMN4026SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 7A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고16,236
Logic Level Gate
40V
7A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC4029SSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,096
Logic Level Gate
40V
7A, 5.1A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ZXMC3F31DN8TA
Diodes Incorporated

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고962,676
Logic Level Gate, 4.5V Drive
30V
6.8A, 4.9A
24 mOhm @ 7A, 10V
3V @ 250µA
12.9nC @ 10V
608pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMC6040SSD-13
Diodes Incorporated

MOSFET N/P-CH 60V 5.1A/3.1A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Power - Max: 1.24W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고690,000
Logic Level Gate
60V
5.1A, 3.1A
40 mOhm @ 8A, 10V
3V @ 250µA
20.8nC @ 10V
1130pF @ 15V
1.24W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC4047LSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,840
Logic Level Gate
40V
7A, 5.1A
24 mOhm @ 6A, 10V
2.4V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMC2700UDM-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT26

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 1.12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고434,568
Logic Level Gate
20V
1.34A, 1.14A
400 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
1.12W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot DMP2100UCB9-7
Diodes Incorporated

MOSFET 2P-CH 20V 3A 9UWLB

  • FET Type: 2 P-Channel (Dual) Common Source
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-UFBGA, WLBGA
  • Supplier Device Package: U-WLB1515-9
패키지: 9-UFBGA, WLBGA
재고103,860
Logic Level Gate
20V
3A
100 mOhm @ 1A, 4.5V
900mV @ 250µA
4.2nC @ 4.5V
310pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
9-UFBGA, WLBGA
U-WLB1515-9
DMN3032LFDBQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 6.2A U-DFN2020

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: 6-UDFN Exposed Pad
재고6,528
Standard
30V
6.2A
30 mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN32D4SDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.65A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 650mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고2,384
Standard
30V
650mA
400 mOhm @ 250mA, 10V
1.6V @ 250µA
1.3nC @ 10V
50pF @ 15V
290mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC2450UV-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고6,384
Standard
20V
1.03A, 700mA
480 mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
37.1pF @ 10V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMG1026UV-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.41A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 410mA
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
  • Power - Max: 580mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고144,000
Logic Level Gate
60V
410mA
1.8 Ohm @ 500mA, 10V
1.8V @ 250µA
0.45nC @ 10V
32pF @ 25V
580mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMG1029SV-7
Diodes Incorporated

MOSFET N/P-CH 60V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
  • Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고6,976
Logic Level Gate
60V
500mA, 360mA
1.7 Ohm @ 500mA, 10V
2.5V @ 250µA
0.3nC @ 4.5V
30pF @ 25V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
2N7002DWQ-7-F
Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고2,272
Standard
60V
230mA
7.5 Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
310mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
ZXMP6A16DN8QTA
Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고11,412
Logic Level Gate
60V
2.9A
85 mOhm @ 2.9A, 10V
1V @ 250µA (Min)
24.2nC @ 10V
1021pF @ 30V
1.81W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMC3A17DN8TA
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고406,416
Logic Level Gate
30V
4.1A, 3.4A
50 mOhm @ 7.8A, 10V
1V @ 250µA (Min)
12.2nC @ 10V
600pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMD63N03XTA
Diodes Incorporated

MOSFET 2N-CH 30V 2.3A 8-MSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고101,136
Logic Level Gate
30V
2.3A
135 mOhm @ 1.7A, 10V
1V @ 250µA (Min)
8nC @ 10V
290pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot ZXMD63N02XTA
Diodes Incorporated

MOSFET 2N-CH 20V 2.5A 8-MSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고308,664
Logic Level Gate
20V
2.5A
130 mOhm @ 1.7A, 4.5V
3V @ 250µA
6nC @ 4.5V
700pF @ 15V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot ZXMD63C03XTA
Diodes Incorporated

MOSFET N/P-CH 30V 8-MSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고1,954,092
Logic Level Gate
30V
-
135 mOhm @ 1.7A, 10V
1V @ 250µA (Min)
8nC @ 10V
290pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot ZXMN2A04DN8TA
Diodes Incorporated

MOSFET 2N-CH 20V 5.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고539,508
Logic Level Gate
20V
5.9A
25 mOhm @ 5.9A, 4.5V
700mV @ 250µA (Min)
22.1nC @ 5V
1880pF @ 10V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP