페이지 6 - Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 380
페이지  6/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot ZXMC6A09DN8TA
Diodes Incorporated

MOSFET N/P-CH 60V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고497,280
Logic Level Gate
60V
3.9A, 3.7A
45 mOhm @ 8.2A, 10V
1V @ 250µA (Min)
24.2nC @ 10V
1407pF @ 40V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMHN6A07T8TA
Diodes Incorporated

MOSFET 4N-CH 60V 1.4A SM8

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
패키지: SOT-223-8
재고46,800
Logic Level Gate
60V
1.4A
300 mOhm @ 1.8A, 10V
3V @ 250µA
3.2nC @ 10V
166pF @ 40V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
hot ZXMN3A04DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.6A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고64,968
Logic Level Gate
30V
6.5A
20 mOhm @ 12.6A, 10V
1V @ 250µA (Min)
36.8nC @ 10V
1890pF @ 15V
1.81W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMP6A18DN8TA
Diodes Incorporated

MOSFET 2P-CH 60V 3.7A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고10,608
Logic Level Gate
60V
3.7A
55 mOhm @ 3.5A, 10V
1V @ 250µA (Min)
44nC @ 10V
1580pF @ 30V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMC4559DN8TC
Diodes Incorporated

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고414,252
Logic Level Gate
60V
3.6A, 2.6A
55 mOhm @ 4.5A, 10V
1V @ 250µA (Min)
20.4nC @ 10V
1063pF @ 30V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMP4050SSDQ-13
Diodes Incorporated

MOSFET 2P-CH 40V 4A 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,160
Standard
40V
4A
50 mOhm @ 6A, 10V
3V @ 250µA
13.9nC @ 10V
674pF @ 20V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMTH4007SPDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V POWERDI506

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.2A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
  • Power - Max: 2.6W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고5,952
Standard
40V
14.2A
8.6 mOhm @ 17A, 10V
4V @ 250µA
41.9nC @ 10V
2026pF @ 30V
2.6W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
hot ZXMHC10A07N8TC
Diodes Incorporated

MOSFET 2N/2P-CH 100V 8-SOIC

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
  • Power - Max: 870mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고10,836
Standard
100V
800mA, 680mA
700 mOhm @ 1.5A, 10V
4V @ 250µA
2.9nC @ 10V
138pF @ 60V
870mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMTH4007SPD-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.2A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
  • Power - Max: 2.6W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고7,152
Standard
40V
14.2A
8.6 mOhm @ 17A, 10V
4V @ 250µA
41.9nC @ 10V
2026pF @ 30V
2.6W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMTH6016LSDQ-13
Diodes Incorporated

MOSFET ARRAY N-CH 60V 7.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: 1.4W, 1.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,296
Standard
60V
7.6A (Ta)
19.5 mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
864pF @ 30V
1.4W, 1.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DI9956T
Diodes Incorporated

MOSFET 2N-CH 30V 3.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고26,394
Logic Level Gate
30V
3.7A
80 mOhm @ 2.2A, 10V
2.8V @ 250µA
27nC @ 10V
320pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMHC6070LSD-13
Diodes Incorporated

MOSFET 2N/2P-CHA 60V 3.1A 8SO

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,376
Standard
60V
3.1A, 2.4A
100 mOhm @ 1A, 10V
3V @ 250µA
11.5nC @ 10V
731pF @ 20V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC4015SSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 8.6A/6.5A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,336
Logic Level Gate
40V
8.6A, 6.2A
15 mOhm @ 3A, 10V
3V @ 250µA
40nC @ 10V
1810pF @ 20V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMN2AMCTA
Diodes Incorporated

MOSFET 2N-CH 20V 2.9A DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
패키지: 8-WDFN Exposed Pad
재고36,000
Logic Level Gate
20V
2.9A
120 mOhm @ 4A, 4.5V
3V @ 250µA
3.1nC @ 4.5V
299pF @ 15V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x2)
DMNH6042SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,472
Standard
60V
16.7A (Tc)
50 mOhm @ 5.1A, 10V
3V @ 250µA
4.2nC @ 4.5V
584pF @ 25V
2.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMT3009LDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 30A V-DFN3030-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type K)
패키지: 8-VDFN Exposed Pad
재고2,976
Standard
30V
30A
11.1 mOhm @ 14.4A, 10V
3V @ 250µA
20nC @ 15V
1500pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type K)
DMN2010UDZ-7
Diodes Incorporated

MOSFET 2N-CH 20V 11A U-DFN2535-6

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2535-6
패키지: 6-UDFN Exposed Pad
재고4,320
Standard
24V
11A
7 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
33.2nC @ 4.5V
2665pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2535-6
DMNH4015SSDQ-13
Diodes Incorporated

MOSFET ARRAY N-CH 40V 8.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,056
Standard
40V
8.6A (Ta)
15 mOhm @ 12A, 10V
3V @ 250µA
33nC @ 10V
1938pF @ 15V
1.4W, 2W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC4029SSDQ-13
Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,040
Logic Level Gate
40V
7A, 5.1A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ZXMN3AM832TA
Diodes Incorporated

MOSFET 2N-CH 30V 2.9A 8MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x2)
패키지: 8-VDFN Exposed Pad
재고526,776
Logic Level Gate
30V
2.9A
120 mOhm @ 2.5A, 10V
1V @ 250µA (Min)
3.9nC @ 10V
190pF @ 25V
1.13W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-MLP (3x2)
DMG6898LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 9.5A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
  • Power - Max: 1.28W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,152
Standard
20V
9.5A
16 mOhm @ 9.4A, 4.5V
1.5V @ 250µA
26nC @ 10V
1149pF @ 10V
1.28W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMN3F31DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 5.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고564,708
Logic Level Gate
30V
5.7A
24 mOhm @ 7A, 10V
3V @ 250µA
12.9nC @ 10V
608pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMC2041UFDB-7
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: 6-UDFN Exposed Pad
재고5,920
Standard
20V
4.7A, 3.2A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP3036SSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 10.6A 8-SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,992
Logic Level Gate
30V
10.6A
20 mOhm @ 9A, 10V
3V @ 250µA
16.5nC @ 10V
1931pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC1016UPD-13
Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고7,184
Standard
12V, 20V
9.5A, 8.7A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
32nC @ 8V
1454pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMC1029UFDB-7
Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: 6-UDFN Exposed Pad
재고5,760
Standard
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC4050SSDQ-13
Diodes Incorporated

MOSFET N/P-CH 40V 5.3A 8SO

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,376
Standard
40V
5.3A
45 mOhm @ 3A, 10V
1.8V @ 250µA
37.56nC @ 10V
1790.8pF @ 20V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC3028LSDXQ-13
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,056
Standard
30V
5.5A, 5.8A
27 mOhm @ 6A, 10V
3V @ 250µA
13.2nC @ 5V
641pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ZDM4306NTA
Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
패키지: SOT-223-8
재고19,950
Standard
60V
2A
330 mOhm @ 3A, 10V
3V @ 1mA
-
350pF @ 25V
3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
ZDM4306NTC
Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
패키지: SOT-223-8
재고3,200
Standard
60V
2A
330 mOhm @ 3A, 10V
3V @ 1mA
-
350pF @ 25V
3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SOT-223