페이지 5 - Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 380
페이지  5/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DMN2013UFX-7
Diodes Incorporated

MOSFET 2N-CH 20V 10A 6-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
  • Power - Max: 780mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFDFN Exposed Pad
  • Supplier Device Package: W-DFN5020-6
패키지: 6-VFDFN Exposed Pad
재고3,472
Logic Level Gate
20V
10A
11.5 mOhm @ 8.5A, 4.5V
1.1V @ 250µA
57.4nC @ 8V
2607pF @ 10V
780mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VFDFN Exposed Pad
W-DFN5020-6
hot DMP3098LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 4.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고578,628
Logic Level Gate
30V
4.4A
65 mOhm @ 5A, 10V
2.1V @ 250µA
7.8nC @ 10V
336pF @ 25V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN3015LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 8.4A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,480
Standard
30V
8.4A (Ta)
15 mOhm @ 12A, 10V
2.5V @ 250µA
25.1nC @ 10V
1415pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC1018UPD-13
Diodes Incorporated

MOSFET N/P-CH 12V POWERDI5060

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고2,352
Standard
12V, 20V
9.5A, 6.9A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
30.4nC @ 8V
1525pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMS3017SSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 8A/6A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 6A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 15V
  • Power - Max: 1.19W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,616
Logic Level Gate
30V
8A, 6A
12 mOhm @ 9.5A, 10V
2.5V @ 250µA
30.6nC @ 10V
1276pF @ 15V
1.19W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN2008LFU-7
Diodes Incorporated

MOSFET 2N-CHA 20V 14.5A DFN2030

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250A
  • Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
패키지: 6-UFDFN Exposed Pad
재고3,264
Standard
20V
14.5A
5.4 mOhm @ 5.5A, 4.5V
1.5V @ 250A
42.3nC @ 10V
1418pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
DMN2023UCB4-7
Diodes Incorporated

MOSFET 2N-CH X1-WLB1818-4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.45W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLBGA
  • Supplier Device Package: X1-WLB1818-4
패키지: 4-XFBGA, WLBGA
재고6,528
Logic Level Gate
-
-
-
-
29nC @ 4.5V
-
1.45W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFBGA, WLBGA
X1-WLB1818-4
hot DMG4932LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 9.5A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
  • Power - Max: 1.19W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고60,000
Logic Level Gate
30V
9.5A
15 mOhm @ 9A, 10V
2.4V @ 250µA
42nC @ 10V
1932pF @ 15V
1.19W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMP2035UTS-13
Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

  • FET Type: 2 P-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.04A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
  • Power - Max: 890mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,592
Logic Level Gate
20V
6.04A
35 mOhm @ 4A, 4.5V
1V @ 250µA
15.4nC @ 4.5V
1610pF @ 10V
890mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot DMC1017UPD-13
Diodes Incorporated

MOSFET N/P-CH 12V 9.5A/6.9A SMD

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고60,000
Standard
12V
9.5A, 6.9A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
35.4nC @ 10V
1787pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
DMC3021LSDQ-13
Diodes Incorporated

MOSFET N/P-CH 30V 8.5A/7A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,472
Logic Level Gate
30V
8.5A, 7A
21 mOhm @ 7A, 10V
2.1V @ 250µA
16.1nC @ 10V
767pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMC3016LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 8.2A/6.2A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,480
Logic Level Gate
30V
8.2A, 6.2A
16 mOhm @ 12A, 10V
2.3V @ 250µA
25.1nC @ 10V
1415pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN3016LDN-7
Diodes Incorporated

MOSFET 2N-CH 30V 7.3A 8VDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: V-DFN3030-8 (Type J)
패키지: 8-PowerWDFN
재고4,608
Logic Level Gate
30V
7.3A
20 mOhm @ 11A, 10V
2V @ 250µA
25.1nC @ 10V
1415pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
V-DFN3030-8 (Type J)
DMC3026LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/6.2A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A, 6.2A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,008
Logic Level Gate
30V
6.5A, 6.2A
25 mOhm @ 6A, 10V
3V @ 250µA
13.2nC @ 10V
641pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN2019UTS-13
Diodes Incorporated

MOSFET 2N-CH 20V 5.4A TSSOP-8

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 780mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고2,032
Logic Level Gate
20V
5.4A
18.5 mOhm @ 7A, 10V
950mV @ 250µA
8.8nC @ 4.5V
143pF @ 10V
780mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMN2028UFU-7
Diodes Incorporated

MOSFET 2N-CH 20V 7.5A UDFN2030-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
패키지: 6-UFDFN Exposed Pad
재고6,896
Standard
20V
7.5A
20.2 mOhm @ 4.5A, 4.5V
1V @ 250µA
18.4nC @ 8V
887pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
DMN61D8LVTQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
패키지: SOT-23-6 Thin, TSOT-23-6
재고3,904
Logic Level Gate
60V
630mA
1.8 Ohm @ 150mA, 5V
2V @ 1mA
0.74nC @ 5V
12.9pF @ 12V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMC3730UFL3-7
Diodes Incorporated

MOSFET N/P-CHA 30V 1.1A DFN1310

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
  • Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: X2-DFN1310-6
패키지: 6-XFDFN
재고6,048
Standard
30V
1.1A, 700mA
460 mOhm @ 200mA, 4.5V
950mV @ 250µA
0.9nC @ 4.5V
65.9pF @ 25V
390mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN
X2-DFN1310-6
DMN3035LWN-7
Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 8VDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
  • Power - Max: 770mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: V-DFN3020-8
패키지: 8-PowerVDFN
재고3,296
Standard
30V
5.5A
35 mOhm @ 4.8A, 10V
2V @ 250µA
9.9nC @ 10V
399pF @ 15V
770mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
V-DFN3020-8
DMN61D8LVT-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
패키지: SOT-23-6 Thin, TSOT-23-6
재고5,824
Logic Level Gate
60V
630mA
1.8 Ohm @ 150mA, 5V
2V @ 1mA
0.74nC @ 5V
12.9pF @ 12V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMN61D8LVT-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
패키지: SOT-23-6 Thin, TSOT-23-6
재고5,616
Logic Level Gate
60V
630mA
1.8 Ohm @ 150mA, 5V
2V @ 1mA
0.74nC @ 5V
12.9pF @ 12V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
hot DMP210DUDJ-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.2A SOT-963

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 27.44pF @ 15V
  • Power - Max: 330mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고44,640
Logic Level Gate
20V
200mA
5.5 Ohm @ 100mA, 4.5V
1.15V @ 250µA
-
27.44pF @ 15V
330mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
hot DMN5010VAK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고36,000
Logic Level Gate
50V
280mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN1150UFL3-7
Diodes Incorporated

MOSFET 2N-CHA 12V 2A DFN1310

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,752
Standard
12V
2A
150 mOhm @ 1A, 4.5V
1V @ 250µA
1.4nC @ 4.5V
115pF @ 6V
390mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN62D0UDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.35A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고3,344
Standard
60V
350mA
2 Ohm @ 100mA, 4.5V
1V @ 250µA
0.5nC @ 4.5V
32pF @ 30V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot DMN2004VK-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고6,250,548
Logic Level Gate
20V
540mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMN601VK-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고344,736
Logic Level Gate
60V
305mA
2 Ohm @ 500mA, 10V
2.5V @ 250µA
-
50pF @ 25V
250mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMN5L06DMK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.305A SOT-26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고53,220
Logic Level Gate
50V
305mA
2 Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
400mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot DMG9933USD-13
Diodes Incorporated

MOSFET 2P-CH 20V 4.6A 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고30,000
Logic Level Gate
20V
4.6A
75 mOhm @ 4.8A, 4.5V
1.1V @ 250µA
6.5nC @ 4.5V
608.4pF @ 6V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMN601DMK-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.51A SOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 510mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 304nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고35,040
Logic Level Gate
60V
510mA
2.4 Ohm @ 200mA, 10V
2.5V @ 1mA
304nC @ 4.5V
50pF @ 25V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26