이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
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패키지: - |
재고29,154 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 91 nC @ 10 V | 8100 pF @ 30 V | ±20V | - | 960mW (Ta), 210W (Tc) | 1.34mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DSO
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패키지: - |
재고14,466 |
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MOSFET (Metal Oxide) | 250 V | 26A (Tc) | 10V | 4V @ 1mA | 22 nC @ 10 V | 2200 pF @ 100 V | ±20V | - | 800mW (Ta), 142W (Tc) | 52mOhm @ 13A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
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패키지: - |
재고13,038 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 103mOhm @ 1A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 100W (Tc) | 340mOhm @ 5.8A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A 8SOP
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패키지: - |
재고58,608 |
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MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 2.5V @ 500µA | 65 nC @ 10 V | 4180 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 3.2mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
N-CH MOSFET 20V, +/-8V, 6A ,0.03
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패키지: - |
재고17,880 |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | 410 pF @ 10 V | ±8V | - | 1.5W (Ta) | 33mOhm @ 4A, 4.5V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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패키지: - |
재고4,905 |
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MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20 nC @ 10 V | 700 pF @ 300 V | ±30V | - | 80W (Tc) | 430mOhm @ 4.9A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8SOP
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패키지: - |
재고92,856 |
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MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 6V, 10V | 3V @ 500µA | 62 nC @ 10 V | 5855 pF @ 20 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.2mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 15MO
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패키지: - |
재고81 |
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SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 5V @ 11.7mA | 158 nC @ 18 V | 6000 pF @ 800 V | +25V, -10V | - | 431W (Tc) | 20mOhm @ 50A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.5A UF6
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패키지: - |
재고7,923 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 16 nC @ 10 V | 730 pF @ 15 V | ±20V | - | 500mW (Ta) | 73mOhm @ 2A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A UFM
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패키지: - |
재고43,884 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.8W (Ta) | 36mOhm @ 4A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=230W F=1MHZ
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패키지: - |
재고6,354 |
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MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고219 |
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MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4V @ 190µA | 8 nC @ 10 V | 270 pF @ 300 V | ±30V | - | 30W (Tc) | 4.1Ohm @ 1A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA SSM
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패키지: - |
재고69,102 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 8.5 pF @ 3 V | ±20V | - | 150mW (Ta) | 4Ohm @ 10mA, 4V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 2.4A UFV
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패키지: - |
재고2,805 |
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MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.5V, 4V | 1.2V @ 1mA | 2.2 nC @ 4 V | 200 pF @ 10 V | ±10V | - | 500mW (Ta) | 65mOhm @ 1.5A, 4V | 150°C | Surface Mount | UFV | 5-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 160A TO220SM
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패키지: - |
재고3,000 |
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MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 6V, 10V | 3V @ 500µA | 103 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 205W (Tc) | 1.9mOhm @ 80A, 6V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK
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패키지: - |
재고11,922 |
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MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 4V @ 500µA | 28 nC @ 10 V | 2050 pF @ 10 V | ±20V | - | 125W (Tc) | 9.7mOhm @ 16.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2A UF6
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패키지: - |
재고8,931 |
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MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 2V @ 1mA | 6 nC @ 10 V | 150 pF @ 10 V | ±20V | - | 500mW (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 57A TO247
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패키지: - |
재고450 |
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MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 4V @ 2.85mA | 105 nC @ 10 V | 6250 pF @ 300 V | ±30V | - | 360W (Tc) | 40mOhm @ 28.5A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A 6UDFNB
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패키지: - |
재고5,625 |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | 1800 pF @ 10 V | ±8V | - | 1W (Ta) | 23.1mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 20A 8TSON
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패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 2V @ 500µA | 58 nC @ 10 V | 2260 pF @ 10 V | +20V, -25V | - | 700mW (Ta), 27W (Tc) | 8.8mOhm @ 10A, 10V | 150°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A 8SOP
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패키지: - |
재고23,532 |
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MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 55 nC @ 10 V | 4560 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.14mOhm @ 60A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | 6500 pF @ 300 V | ±30V | - | 400W (Tc) | 57mOhm @ 24.6A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 40A DPAK
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패키지: - |
재고12,039 |
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MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 6V, 10V | 3V @ 1mA | 83 nC @ 10 V | 4140 pF @ 10 V | +10V, -20V | - | 68W (Tc) | 9.1mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 250MA VESM
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패키지: - |
재고125,316 |
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MOSFET (Metal Oxide) | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | - | 42 pF @ 10 V | ±10V | - | 150mW (Ta) | 1.4Ohm @ 150mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UF6
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패키지: - |
재고15,048 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4.5A (Ta) | 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | 370 pF @ 300 V | ±30V | - | 30W (Tc) | 950mOhm @ 2.3A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A 8SOP
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패키지: - |
재고24,423 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 91 nC @ 10 V | 8100 pF @ 30 V | ±20V | - | 960mW (Ta), 170W (Tc) | 1.28mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 30A TO220SIS
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 45W (Tc) | 90mOhm @ 15A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A DPAK
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패키지: - |
재고4,332 |
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MOSFET (Metal Oxide) | 60 V | 25A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 15 nC @ 10 V | 855 pF @ 10 V | ±20V | - | 57W (Tc) | 18.5mOhm @ 12.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |