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부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 200A TO220SM
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 3V @ 1mA | 460 nC @ 10 V | 1280 pF @ 10 V | +10V, -20V | - | 375W (Tc) | 1.8mOhm @ 100A, 10V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 20A 8-SOPA
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패키지: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고126 |
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MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 130W (Tc) | 190mOhm @ 7.9A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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패키지: - |
재고6,000 |
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MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 130W (Tc) | 230mOhm @ 7.9A, 10V | 150°C | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
UMOS10 SOP-ADV(N) 150V 9MOHM
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패키지: - |
재고27,105 |
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MOSFET (Metal Oxide) | 150 V | 64A (Tc) | 8V, 10V | 4.3V @ 1mA | 44 nC @ 10 V | 5400 pF @ 75 V | ±20V | - | 960mW (Ta), 210W (Tc) | 9mOhm @ 32A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 110A 8SOP
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패키지: - |
재고26,481 |
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MOSFET (Metal Oxide) | 60 V | 110A (Ta) | - | 2.5V @ 1mA | 104 nC @ 10 V | 6900 pF @ 10 V | ±20V | - | 960mW (Ta), 170W (Tc) | 2.1mOhm @ 55A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 15
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패키지: - |
재고324 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 100A (Tc) | 18V | 5V @ 11.7mA | 128 nC @ 18 V | 4850 pF @ 400 V | +25V, -10V | - | 342W (Tc) | 22mOhm @ 50A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 45A 8SOP
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패키지: - |
재고27,522 |
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MOSFET (Metal Oxide) | 100 V | 45A (Ta) | 6V, 10V | 3.5V @ 500µA | 52 nC @ 10 V | 3240 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 6.3mOhm @ 22.5A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 40V 58A DPAK
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패키지: - |
재고46,824 |
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MOSFET (Metal Oxide) | 40 V | 58A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 60 nC @ 10 V | 4670 pF @ 20 V | ±20V | - | 87W (Tc) | 3.1mOhm @ 29A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
PB-F SMALL LOW ON RESISTANCE PCH
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패키지: - |
재고8,685 |
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MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 2.6V @ 1mA | - | 137 pF @ 15 V | ±20V | - | 500mW (Ta) | 240mOhm @ 650mA, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 10A DPAK
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패키지: - |
재고11,736 |
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MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 3V @ 1mA | 19 nC @ 10 V | 930 pF @ 10 V | +10V, -20V | - | 27W (Tc) | 44mOhm @ 5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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패키지: - |
재고204 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 700µA | 71 nC @ 10 V | 5000 pF @ 30 V | ±20V | - | 168W (Tc) | 3.2mOhm @ 50A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 15A DPAK
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패키지: - |
재고1,962 |
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MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 6V, 10V | 3V @ 1mA | 36 nC @ 10 V | 1770 pF @ 10 V | +10V, -20V | - | 41W (Tc) | 50mOhm @ 7.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET 100V 4.5MOHM SOP-ADV(N)
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패키지: - |
재고21,045 |
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MOSFET (Metal Oxide) | 100 V | 92A (Tc) | 10V | 4V @ 1mA | 58 nC @ 10 V | 5200 pF @ 50 V | ±20V | - | 800mW (Ta) | 4.5mOhm @ 46A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
SMALL LOW RON PCH MOSFETS VDSS:-
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패키지: - |
재고8,970 |
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MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 100µA | - | 11 pF @ 3 V | ±10V | - | 150mW (Ta) | 8Ohm @ 10mA, 4V | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 4A SOT23F
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패키지: - |
재고45,594 |
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MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4V, 10V | 2V @ 100µA | 5.9 nC @ 10 V | 280 pF @ 15 V | +10V, -20V | - | 1W (Ta) | 71mOhm @ 3A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8DSOP
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패키지: - |
재고46,158 |
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MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 2.1V @ 1mA | 110 nC @ 10 V | 10000 pF @ 15 V | ±20V | - | 960mW (Ta), 170W (Tc) | 0.6mOhm @ 50A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 60A 8SOP
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패키지: - |
재고133,077 |
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MOSFET (Metal Oxide) | 40 V | 60A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 160 nC @ 10 V | 5640 pF @ 10 V | +10V, -20V | - | 960mW (Ta), 132W (Tc) | 4.7mOhm @ 30A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
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패키지: - |
재고369 |
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MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 24.8 nC @ 4.5 V | 1800 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 25.8mOhm @ 4A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=270W F=1MHZ
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패키지: - |
재고6,039 |
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MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 4V @ 1.69mA | 62 nC @ 10 V | 3650 pF @ 300 V | ±30V | - | 270W (Tc) | 65mOhm @ 19A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 48A 8SOP
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패키지: - |
재고14,982 |
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MOSFET (Metal Oxide) | 30 V | 48A (Tc) | 4.5V, 10V | 2.1V @ 200µA | 22 nC @ 10 V | 1975 pF @ 15 V | ±20V | - | 830mW (Ta), 69W (Tc) | 4.8mOhm @ 24A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 100A 8SOP
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패키지: - |
재고26,406 |
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MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 230 nC @ 10 V | 9500 pF @ 10 V | +10V, -20V | - | 960mW (Ta), 170W (Tc) | 3.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
SMOS LOW RON NCH IO: 0.4A VDSS:
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패키지: - |
재고23,565 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 150mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -60V -2A SOT23F
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패키지: - |
재고16,254 |
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MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 2V @ 1mA | 8.3 nC @ 10 V | 330 pF @ 10 V | +10V, -20V | - | 1W (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 2V @ 500µA | 115 nC @ 10 V | 4800 pF @ 10 V | +20V, -25V | - | 1.6W (Ta), 45W (Tc) | 4.8mOhm @ 17A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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패키지: - |
재고129 |
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MOSFET (Metal Oxide) | 900 V | 2.5A (Ta) | 10V | 4V @ 250µA | 15 nC @ 10 V | 650 pF @ 25 V | ±30V | - | 35W (Tc) | 4.6Ohm @ 1.3A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS
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패키지: - |
재고2,610 |
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MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 4V @ 1mA | 30 nC @ 10 V | 1130 pF @ 300 V | ±30V | - | 40W (Tc) | 750mOhm @ 5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AECQ MOSFET NCH 100V 3.5A SOT323
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패키지: - |
재고22,416 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
100V U-MOS X-H SOP-ADVANCE(N) 3.
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패키지: - |
재고15,069 |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3.5V @ 500µA | 83 nC @ 10 V | 7400 pF @ 50 V | ±20V | - | 210W (Tc) | 3.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 24A TO220SIS
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패키지: - |
재고126 |
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MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 45W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |