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Infineon Technologies 제품

기록 16,988
페이지  465/567
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hot IRGS4045DPBF
Infineon Technologies

IGBT 600V 12A 77W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고30,000
IRGC4069B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,968
SPI20N60C3HKSA1
Infineon Technologies

MOSFET N-CH 600V 20.7A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고2,672
IPI08CNE8N G
Infineon Technologies

MOSFET N-CH 85V 95A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,808
hot IPP100N06S3L-03
Infineon Technologies

MOSFET N-CH 55V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,612
hot IPP050N06N G
Infineon Technologies

MOSFET N-CH 60V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고12,420
hot BSO104N03S
Infineon Technologies

MOSFET N-CH 30V 10A 8DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고9,132
IRF7233PBF
Infineon Technologies

MOSFET P-CH 12V 9.5A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,472
IPA65R095C7XKSA1
Infineon Technologies

MOSFET N-CH 650V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 590µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고5,984
hot IPB037N06N3 G
Infineon Technologies

MOSFET N-CH 60V 90A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고717,048
IPB65R225C7ATMA1
Infineon Technologies

MOSFET N-CH 650V 11A TO-263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,896
BSP373NH6327XTSA1
Infineon Technologies

MOSFET N-CH 100V 1.7A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 218µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고2,208
IRF1010EZSTRLP
Infineon Technologies

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고33,906
hot IRF7350PBF
Infineon Technologies

MOSFET N/P-CH 100V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,416
hot IRF7311TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 6.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고1,108,992
BAT6804WE6327BTSA1
Infineon Technologies

DIODE SCHOTTKY RF SERIES SOT-323

  • Diode Type: Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고7,920
IFX8117MEV33HTMA1
Infineon Technologies

IC REG LINEAR 3.3V 1A SOT223-4

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 15V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.25V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 75dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고4,368
IRS26310DJTRPBF
Infineon Technologies

IC DRIVER MOSFET/IGBT 44-PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
패키지: 44-LCC (J-Lead), 32 Leads
재고7,520
hot IR2113PBF
Infineon Technologies

IC MOSFET DVR HI/LO SIDE 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고97,344
TLE7729TXUMA1
Infineon Technologies

IC RCVR 4CH AIRBAG SAT 28TSSOP

  • Applications: Automotive Systems
  • Interface: SPI Serial
  • Voltage - Supply: 3.3V, 5V
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: P-TSSOP-28
  • Mounting Type: Surface Mount
패키지: 28-TSSOP (0.173", 4.40mm Width)
재고5,184
TC1797384F150EACKDUMA1
Infineon Technologies

IC MCU 32BIT 3MB FLASH 416BGA

  • Core Processor: TriCore?
  • Core Size: 32-Bit
  • Speed: 150MHz
  • Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC
  • Peripherals: DMA, POR, WDT
  • Number of I/O: 221
  • Program Memory Size: 3MB (3M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 64K x 8
  • RAM Size: 224K x 8
  • Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
  • Data Converters: A/D 4x10b, 44x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 416-BGA
  • Supplier Device Package: PG-BGA-416-10
패키지: 416-BGA
재고2,240
SAF-XE164FM-48F80L AA
Infineon Technologies

IC MCU 16BIT 384KB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 76
  • Program Memory Size: 384KB (384K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 34K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
패키지: 100-LQFP Exposed Pad
재고5,408
XC878LM16FFA5VACKXUMA1
Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 27MHz
  • Connectivity: LIN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 40
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 3.25K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
패키지: 64-LQFP
재고6,592
XMC1302Q024F0016ABXUMA1
Infineon Technologies

IC MCU 32BIT 16KB FLASH 24VQFN

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 18
  • Program Memory Size: 16KB (16K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 13x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 24-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-24-19
패키지: 24-VFQFN Exposed Pad
재고2,528
TDA5103AHTMA1
Infineon Technologies

TRANSMITTER ASK/FSK P-TSSOP-10

  • Frequency: 345MHz
  • Applications: Alarm Systems, Communication Systems
  • Modulation or Protocol: ASK, FSK
  • Data Rate (Max): 20 kbps
  • Power - Output: 5dBm
  • Current - Transmitting: 7mA
  • Data Interface: PCB, Surface Mount
  • Antenna Connector: PCB, Surface Mount
  • Memory Size: -
  • Features: -
  • Voltage - Supply: 2.1 V ~ 4 V
  • Operating Temperature: -25°C ~ 85°C
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
재고8,028
BGS16MN14E6327XTSA1
Infineon Technologies

IC SWITCH RF 14TSNP

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 2.7GHz
  • Isolation @ Frequency: 33dB @ 2GHz
  • Insertion Loss @ Frequency: 0.45dB @ 2GHz
  • IIP3: -
  • Topology: -
  • Circuit: SP6T
  • P1dB: -
  • Features: -
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • RF Type: WCDMA
  • Package / Case: 14-WFQFN Exposed Pad
  • Supplier Device Package: PG-TSNP-14-3
패키지: 14-WFQFN Exposed Pad
재고4,230
BGB719N7ESDE6327XTMA1
Infineon Technologies

IC AMP MMIC RF FM RADIO TSNP-7

  • Frequency: 10MHz ~ 1GHz
  • P1dB: -6dBm
  • Gain: 13.5dB
  • Noise Figure: 1.2dB
  • RF Type: FM
  • Voltage - Supply: 3V
  • Current - Supply: 2.8mA
  • Test Frequency: 100MHz
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: TSNP-7-6
패키지: 6-XFDFN Exposed Pad
재고4,320
TLE4267GMXUMA1
Infineon Technologies

IC REG LINEAR 5V 400MA 14DSO

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.6V @ 400mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): 4mA
  • Current - Supply (Max): 80mA
  • PSRR: 54dB (100Hz)
  • Control Features: Inhibit, Reset
  • Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-14
패키지: 14-SOIC (0.154", 3.90mm Width)
재고21,930
TLD21321EPXUMA1
Infineon Technologies

LITIX

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 5.5V
  • Voltage - Supply (Max): 40V
  • Voltage - Output: 40V
  • Current - Output / Channel: 180mA
  • Frequency: -
  • Dimming: PWM
  • Applications: Automotive
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14
패키지: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
재고24,564
TLD11141EPXUMA1
Infineon Technologies

LITIX

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 5.5V
  • Voltage - Supply (Max): 40V
  • Voltage - Output: 70V
  • Current - Output / Channel: 180mA
  • Frequency: -
  • Dimming: PWM
  • Applications: Automotive
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14
패키지: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
재고22,596