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Infineon Technologies 제품

기록 16,988
페이지  463/567
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IKQ40N120CT2XKSA1
Infineon Technologies

IGBT HS SW 1200V 40A TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 3.1mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 32ns/328ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고5,264
IRFSL4228PBF
Infineon Technologies

MOSFET N-CH 150V 83A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고5,296
IRF3205ZSTRRPBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,400
hot IRF7464TR
Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고209,808
IRF7421D1
Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,320
IRFZ44E
Infineon Technologies

MOSFET N-CH 60V 48A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고3,584
AUIRLS4030TRL
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,816
SPD06N60C3BTMA1
Infineon Technologies

MOSFET N-CH 650V 6.2A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,664
BSC070N10NS3GATMA1
Infineon Technologies

MOSFET N-CH 100V 90A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 75µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고232,404
PTFA080551FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 55W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고2,608
BA 892-02V E6127
Infineon Technologies

DIODE RF SW 35V 100MA SC-79

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
패키지: SC-79, SOD-523
재고4,960
SIDC26D60C6
Infineon Technologies

DIODE GEN PURP 600V 100A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 100A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: Die
재고6,288
IP2003TR
Infineon Technologies

IC REG BUCK ADJ 40A SYNC LGA

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 13.2V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 3.3V
  • Current - Output: 40A
  • Frequency - Switching: 300kHz ~ 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Power Block (LGA)
  • Supplier Device Package: LGA (11x11)
패키지: Power Block (LGA)
재고6,128
TDA16847
Infineon Technologies

IC POWER SUPPLY CONTROLLER 14DIP

  • Applications: Power Supply Controller
  • Voltage - Input: -
  • Voltage - Supply: 8 V ~ 16 V
  • Current - Supply: 5mA
  • Operating Temperature: -25°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: P-DIP-14
패키지: 14-DIP (0.300", 7.62mm)
재고3,520
hot BTS660P
Infineon Technologies

SWITCH HGH SIDE CURRNT TO220-7-3

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 58 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 38A
  • Rds On (Typ): 7.2 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-7 (Formed Leads)
  • Supplier Device Package: P-TO220-7
패키지: TO-220-7 (Formed Leads)
재고31,560
BTS3134DATMA1
Infineon Technologies

IC SWITCH N-CH LOW SIDE DPAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 42V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3.5A
  • Rds On (Typ): 35 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고42,612
IRS2526DSTRPBF
Infineon Technologies

IC MINI-BALLAST CTLR 8SOIC

  • Type: Ballast Controller
  • Frequency: -
  • Voltage - Supply: 12 V ~ 15 V
  • Current - Supply: -
  • Current - Output Source/Sink: -
  • Dimming: No
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,184
hot IR2118STR
Infineon Technologies

IC MOSFET DRIVER HIGH-SIDE 8SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,848
hot IR1167BSTRPBF
Infineon Technologies

IC SMART SECONDARY DRIVER 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 18 V
  • Logic Voltage - VIL, VIH: 2V, 2.15V
  • Current - Peak Output (Source, Sink): 2A, 7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 10ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고120,768
IRS2807DSPBF
Infineon Technologies

HVIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,208
2EDN8523FXTMA1
Infineon Technologies

IC GATE DRVR 8DSO

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 1.9V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고19,278
TLE72422GXUMA1
Infineon Technologies

IC CURRENT SOURCE DSO28

  • Function: Current Source
  • Sensing Method: Low-Side
  • Accuracy: -
  • Voltage - Input: 5.5 V ~ 42 V
  • Current - Output: 30mA
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-28
패키지: 28-SOIC (0.295", 7.50mm Width)
재고2,880
XE167FM72F80LAAFXUMA1
Infineon Technologies

IC MCU 16BIT 576KB FLASH 144LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 119
  • Program Memory Size: 576KB (576K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 50K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 24x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: 144-LQFP (20x20)
패키지: 144-LQFP Exposed Pad
재고5,168
C165LFHABXQMA1
Infineon Technologies

IC MCU 16BIT ROMLESS 100TQFP

  • Core Processor: C166
  • Core Size: 16-Bit
  • Speed: 20MHz
  • Connectivity: EBI/EMI, SPI, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 77
  • Program Memory Size: -
  • Program Memory Type: ROMless
  • EEPROM Size: -
  • RAM Size: 2K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: -
  • Oscillator Type: External
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고7,792
ESD8V0R1B-02EL E6433
Infineon Technologies

TVS DIODE 14VWM 28VC TSLP2-18

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 14V (Max)
  • Voltage - Breakdown (Min): 8.5V
  • Voltage - Clamping (Max) @ Ipp: 28V
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 4pF @ 1MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
패키지: SOD-882
재고3,024
BGM13HBA9E6327XTSA1
Infineon Technologies

MULTI CHIP MODULES

  • RF Family/Standard: -
  • Protocol: -
  • Modulation: -
  • Frequency: -
  • Data Rate: -
  • Power - Output: -
  • Sensitivity: -
  • Serial Interfaces: -
  • Antenna Type: -
  • Memory Size: -
  • Voltage - Supply: -
  • Current - Receiving: -
  • Current - Transmitting: -
  • Mounting Type: -
  • Operating Temperature: -
  • Package / Case: -
패키지: -
재고2,196
TDA5200XUMA1
Infineon Technologies

IC LP SGL CONV ASK P-TSSOP-28

  • Frequency: 433MHz, 868MHz
  • Sensitivity: -107dBm
  • Data Rate (Max): -
  • Modulation or Protocol: ASK
  • Applications: Alarm Systems, Communication Systems
  • Current - Receiving: 4.8mA
  • Data Interface: PCB, Surface Mount
  • Memory Size: -
  • Antenna Connector: PCB, Surface Mount
  • Features: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-28
패키지: 28-TSSOP (0.173", 4.40mm Width)
재고56,208
BGA 748L16 E6327
Infineon Technologies

IC AMP MMIC QUAD-BAND LN TSLP16

  • Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
  • P1dB: -7dBm (0.2mW)
  • Gain: 16dB
  • Noise Figure: 1.1dB
  • RF Type: UMTS
  • Voltage - Supply: 3.6V
  • Current - Supply: 10mA
  • Test Frequency: 880MHz
  • Package / Case: 16-XFQFN Exposed Pad
  • Supplier Device Package: TSLP-16-1
패키지: 16-XFQFN Exposed Pad
재고62,592
TLE52052GNTMA1
Infineon Technologies

IC MOTOR DRIVER PAR TO263-7

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,024
CHL8103-11CRT
Infineon Technologies

IC REG BUCK 40VQFN

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,992