페이지 35 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7530PBF	Infineon Technologies	MOSFET 2N-CH 20V 5.4A MICRO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고720,000	Standard	20V	5.4A	30 mOhm @ 5.4A, 4.5V	1.2V @ 250µA	26nC @ 4.5V	1310pF @ 15V	1.3W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
IRF7331	Infineon Technologies	MOSFET 2N-CH 20V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고540,156	Logic Level Gate	20V	7A	30 mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4822_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,352	Standard	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4834BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고364,128	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BUK9MJT-55PRF,518	Nexperia USA Inc.	MOSFET 2N-CH 55V 20SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	패키지: 20-SOIC (0.295", 7.50mm Width)	재고7,040	Logic Level Gate	55V	-	13.8 mOhm @ 10A, 10V	-	-	-	-	-	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
NTLUD3191PZTAG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고5,616	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
SI4561DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 6.8A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Power - Max: 3W, 3.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고27,960	Logic Level Gate	40V	6.8A, 7.2A	35.5 mOhm @ 5A, 10V	3V @ 250µA	20nC @ 10V	640pF @ 20V	3W, 3.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDJ1028N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 3.2A SC-75 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC75-6 FLMP Supplier Device Package: SC75-6 FLMP	패키지: SC75-6 FLMP	재고176,304	Logic Level Gate	20V	3.2A	90 mOhm @ 3.2A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	200pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	SC75-6 FLMP	SC75-6 FLMP
ZXMD65P02N8TA	Diodes Incorporated	MOSFET 2P-CH 20V 4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V Power - Max: 1.75W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,680	Standard	20V	4A	50 mOhm @ 2.9A, 4.5V	700mV @ 250µA (Min)	20nC @ 4.5V	960pF @ 15V	1.75W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
2N7002DW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.23A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고499,320	Standard	60V	230mA	7.5 Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
APTM50H15FT1G	Microsemi Corporation	MOSFET 4N-CH 500V 25A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고2,976	Standard	500V	25A	180 mOhm @ 21A, 10V	5V @ 1mA	170nC @ 10V	5448pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI7214DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.6A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고401,940	Logic Level Gate	30V	4.6A	40 mOhm @ 6.4A, 10V	3V @ 250µA	6.5nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4505DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,320	Logic Level Gate	30V, 8V	6A, 3.8A	18 mOhm @ 7.8A, 10V	1.8V @ 250µA	20nC @ 5V	-	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SP8J2FU6TB	Rohm Semiconductor	MOSFET 2P-CH 30V 4.5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,096	Logic Level Gate	30V	4.5A	56 mOhm @ 4.5A, 10V	2.5V @ 1mA	8.5nC @ 5V	850pF @ 10V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON6906A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9.1A/10A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V Power - Max: 1.9W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	패키지: 8-PowerVDFN	재고5,424	Logic Level Gate	30V	9.1A, 10A	14.4 mOhm @ 9.1A, 10V	2.4V @ 250µA	9nC @ 10V	670pF @ 15V	1.9W, 2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
SI4214DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고466,284	Standard	30V	8.5A	23.5 mOhm @ 7A, 10V	2.5V @ 250µA	23nC @ 10V	785pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3033LSDQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 6.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,584	Standard	30V	6.9A	20 mOhm @ 6.9A, 10V	2.1V @ 250µA	13nC @ 10V	725pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN1250UFEL-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-QFN1515-1 FET Type: 8 N-Channel, Common Gate, Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Power - Max: 660mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-UFQFN Exposed Pad Supplier Device Package: U-QFN1515-12	패키지: 12-UFQFN Exposed Pad	재고5,760	Standard	12V	2A	450 mOhm @ 200mA, 4.5V	1V @ 250µA	1.9nC @ 4.5V	190pF @ 6V	660mW	-55°C ~ 150°C (TJ)	Surface Mount	12-UFQFN Exposed Pad	U-QFN1515-12
DMC4047LSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 7A/5.1A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,840	Logic Level Gate	40V	7A, 5.1A	24 mOhm @ 6A, 10V	2.4V @ 250µA	19.1nC @ 10V	1060pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7317TRPBF	Infineon Technologies	MOSFET N/P-CH 20V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고568,344	Logic Level Gate	20V	6.6A, 5.3A	29 mOhm @ 6A, 4.5V	700mV @ 250µA	27nC @ 4.5V	900pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMD8580	Fairchild/ON Semiconductor	MOSFET 80V 16A POWER 5X6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	패키지: 8-PowerWDFN	재고6,496	Standard	80V	16A (Ta), 82A (Tc)	4.6 mOhm @ 16A, 10V	4.5V @ 250µA	80nC @ 10V	5875pF @ 40V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
SIZ920DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 40A PWRPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 39W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	패키지: 6-PowerPair?	재고110,244	Standard	30V	40A	7.1 mOhm @ 18.9A, 10V	2.5V @ 250µA	35nC @ 10V	1260pF @ 15V	39W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SQJ912AEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고4,704	Standard	40V	30A	9.3 mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMN4031SSD-13	Diodes Incorporated	MOSFET 2N-CH 40V 5.2A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Power - Max: 1.42W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고144,060	Logic Level Gate	40V	5.2A	31 mOhm @ 6A, 10V	3V @ 250µA	18.6nC @ 10V	945pF @ 20V	1.42W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NDS9952A	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고476,688	Logic Level Gate	30V	3.7A, 2.9A	80 mOhm @ 1A, 10V	2.8V @ 250µA	25nC @ 10V	320pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN2041LSD-13	Diodes Incorporated	MOSFET 2N-CH 20V 7.63A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.63A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 1.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고15,552	Logic Level Gate	20V	7.63A	28 mOhm @ 6A, 4.5V	1.2V @ 250µA	15.6nC @ 10V	550pF @ 10V	1.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTLJD3119CTBG	ON Semiconductor	MOSFET N/P-CH 20V 6WDFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고7,792	Logic Level Gate	20V	2.6A, 2.3A	65 mOhm @ 3.8A, 4.5V	1V @ 250µA	3.7nC @ 4.5V	271pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NVLJD4007NZTAG	ON Semiconductor	MOSFET 2N-CH 30V 0.245A WDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 245mA Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 755mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고53,520	Logic Level Gate	30V	245mA	7 Ohm @ 125mA, 4.5V	1.5V @ 100µA	0.75nC @ 4.5V	20pF @ 5V	755mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
QS5K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 2A TSMT5 FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSMT5	패키지: SOT-23-5 Thin, TSOT-23-5	재고36,000	Logic Level Gate	30V	2A	100 mOhm @ 2A, 4.5V	1.5V @ 1mA	3.9nC @ 4.5V	175pF @ 10V	1.25W	150°C (TJ)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSMT5
DMC3400SDW-7	Diodes Incorporated	MOSFET N/P-CH 30V SOT363 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고1,109,910	Standard	30V	650mA, 450mA	400 mOhm @ 590mA, 10V	1.6V @ 250µA	1.4nC @ 10V	55pF @ 15V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

IRF7530PBF

Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고720,000

Standard

20V

5.4A

30 mOhm @ 5.4A, 4.5V

1.2V @ 250µA

26nC @ 4.5V

1310pF @ 15V

1.3W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

IRF7331

Infineon Technologies

MOSFET 2N-CH 20V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고540,156

Logic Level Gate

20V

7A

30 mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4822_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,352

Standard

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4834BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고364,128

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BUK9MJT-55PRF,518

Nexperia USA Inc.

MOSFET 2N-CH 55V 20SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

패키지: 20-SOIC (0.295", 7.50mm Width)

재고7,040

Logic Level Gate

55V

-

13.8 mOhm @ 10A, 10V

-

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO

NTLUD3191PZTAG

ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고5,616

Logic Level Gate

20V

1.1A

250 mOhm @ 1.5A, 4.5V

1V @ 250µA

3.5nC @ 4.5V

160pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

SI4561DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 6.8A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고27,960

Logic Level Gate

40V

6.8A, 7.2A

35.5 mOhm @ 5A, 10V

3V @ 250µA

20nC @ 10V

640pF @ 20V

3W, 3.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDJ1028N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.2A SC-75

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC75-6 FLMP
Supplier Device Package: SC75-6 FLMP

패키지: SC75-6 FLMP

재고176,304

Logic Level Gate

20V

3.2A

90 mOhm @ 3.2A, 4.5V

1.5V @ 250µA

3nC @ 4.5V

200pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

SC75-6 FLMP

ZXMD65P02N8TA

Diodes Incorporated

MOSFET 2P-CH 20V 4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V
Power - Max: 1.75W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,680

Standard

20V

4A

50 mOhm @ 2.9A, 4.5V

700mV @ 250µA (Min)

20nC @ 4.5V

960pF @ 15V

1.75W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

2N7002DW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고499,320

Standard

60V

230mA

7.5 Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

APTM50H15FT1G

Microsemi Corporation

MOSFET 4N-CH 500V 25A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고2,976

Standard

500V

25A

180 mOhm @ 21A, 10V

5V @ 1mA

170nC @ 10V

5448pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SI7214DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.6A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고401,940

Logic Level Gate

30V

4.6A

40 mOhm @ 6.4A, 10V

3V @ 250µA

6.5nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4505DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V/8V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,320

Logic Level Gate

30V, 8V

6A, 3.8A

18 mOhm @ 7.8A, 10V

1.8V @ 250µA

20nC @ 5V

-

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SP8J2FU6TB

Rohm Semiconductor

MOSFET 2P-CH 30V 4.5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,096

Logic Level Gate

30V

4.5A

56 mOhm @ 4.5A, 10V

2.5V @ 1mA

8.5nC @ 5V

850pF @ 10V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AON6906A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9.1A/10A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
Power - Max: 1.9W, 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

패키지: 8-PowerVDFN

재고5,424

Logic Level Gate

30V

9.1A, 10A

14.4 mOhm @ 9.1A, 10V

2.4V @ 250µA

9nC @ 10V

670pF @ 15V

1.9W, 2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

SI4214DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고466,284

Standard

30V

8.5A

23.5 mOhm @ 7A, 10V

2.5V @ 250µA

23nC @ 10V

785pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3033LSDQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 6.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,584

Standard

30V

6.9A

20 mOhm @ 6.9A, 10V

2.1V @ 250µA

13nC @ 10V

725pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN1250UFEL-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-QFN1515-1

FET Type: 8 N-Channel, Common Gate, Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Power - Max: 660mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN Exposed Pad
Supplier Device Package: U-QFN1515-12

패키지: 12-UFQFN Exposed Pad

재고5,760

Standard

12V

2A

450 mOhm @ 200mA, 4.5V

1V @ 250µA

1.9nC @ 4.5V

190pF @ 6V

660mW

-55°C ~ 150°C (TJ)

Surface Mount

12-UFQFN Exposed Pad

U-QFN1515-12

DMC4047LSD-13

Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,840

Logic Level Gate

40V

7A, 5.1A

24 mOhm @ 6A, 10V

2.4V @ 250µA

19.1nC @ 10V

1060pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7317TRPBF

Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고568,344

Logic Level Gate

20V

6.6A, 5.3A

29 mOhm @ 6A, 4.5V

700mV @ 250µA

27nC @ 4.5V

900pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMD8580

Fairchild/ON Semiconductor

MOSFET 80V 16A POWER 5X6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

패키지: 8-PowerWDFN

재고6,496

Standard

80V

16A (Ta), 82A (Tc)

4.6 mOhm @ 16A, 10V

4.5V @ 250µA

80nC @ 10V

5875pF @ 40V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

SIZ920DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 40A PWRPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Power - Max: 39W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

패키지: 6-PowerPair?

재고110,244

Standard

30V

40A

7.1 mOhm @ 18.9A, 10V

2.5V @ 250µA

35nC @ 10V

1260pF @ 15V

39W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SQJ912AEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고4,704

Standard

40V

30A

9.3 mOhm @ 9.7A, 10V

2.5V @ 250µA

38nC @ 10V

1835pF @ 20V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMN4031SSD-13

Diodes Incorporated

MOSFET 2N-CH 40V 5.2A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Power - Max: 1.42W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고144,060

Logic Level Gate

40V

5.2A

31 mOhm @ 6A, 10V

3V @ 250µA

18.6nC @ 10V

945pF @ 20V

1.42W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NDS9952A

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고476,688

Logic Level Gate

30V

3.7A, 2.9A

80 mOhm @ 1A, 10V

2.8V @ 250µA

25nC @ 10V

320pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN2041LSD-13

Diodes Incorporated

MOSFET 2N-CH 20V 7.63A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 1.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고15,552

Logic Level Gate

20V

7.63A

28 mOhm @ 6A, 4.5V

1.2V @ 250µA

15.6nC @ 10V

550pF @ 10V

1.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTLJD3119CTBG

ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고7,792

Logic Level Gate

20V

2.6A, 2.3A

65 mOhm @ 3.8A, 4.5V

1V @ 250µA

3.7nC @ 4.5V

271pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NVLJD4007NZTAG

ON Semiconductor

MOSFET 2N-CH 30V 0.245A WDFN6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Rds On (Max) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 755mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고53,520

Logic Level Gate

30V

245mA

7 Ohm @ 125mA, 4.5V

1.5V @ 100µA

0.75nC @ 4.5V

20pF @ 5V

755mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

QS5K2TR

Rohm Semiconductor

MOSFET 2N-CH 30V 2A TSMT5

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5

패키지: SOT-23-5 Thin, TSOT-23-5

재고36,000

Logic Level Gate

30V

2A

100 mOhm @ 2A, 4.5V

1.5V @ 1mA

3.9nC @ 4.5V

175pF @ 10V

1.25W

150°C (TJ)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSMT5

DMC3400SDW-7

Diodes Incorporated

MOSFET N/P-CH 30V SOT363

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고1,109,910

Standard

30V

650mA, 450mA

400 mOhm @ 590mA, 10V

1.6V @ 250µA

1.4nC @ 10V

55pF @ 15V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363