페이지 33 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRFI4019HG-117P	Infineon Technologies	MOSFET 2N-CH 150V 8.7A TO-220FP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack (Formed Leads) Supplier Device Package: TO-220-5 Full-Pak	패키지: TO-220-5 Full Pack (Formed Leads)	재고48,108	Standard	150V	8.7A	95 mOhm @ 5.2A, 10V	4.9V @ 50µA	20nC @ 10V	810pF @ 25V	18W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack (Formed Leads)	TO-220-5 Full-Pak
BSO150N03	Infineon Technologies	MOSFET 2N-CH 30V 7.6A 8DSO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고667,368	Standard	30V	7.6A	15 mOhm @ 9.1A, 10V	2V @ 25µA	15nC @ 5V	1890pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
IRF7338PBF	Infineon Technologies	MOSFET N/P-CH 12V 6.3A/3A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고64,632	Logic Level Gate	12V	6.3A, 3A	34 mOhm @ 6A, 4.5V	1.5V @ 250µA	8.6nC @ 4.5V	640pF @ 9V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF5850TR	Infineon Technologies	MOSFET 2P-CH 20V 2.2A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고6,592	Logic Level Gate	20V	2.2A	135 mOhm @ 2.2A, 4.5V	1.2V @ 250µA	5.4nC @ 4.5V	320pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
VQ1006P	Vishay Siliconix	MOSFET 4N-CH 90V 0.4A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	패키지: -	재고6,168	Logic Level Gate	90V	400mA	4.5 Ohm @ 1A, 10V	2.5V @ 1mA	-	60pF @ 25V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
MP6K31TCR	Rohm Semiconductor	MOSFET 2N-CH 60V 2A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	패키지: 6-SMD, Flat Leads	재고5,776	Logic Level Gate, 4V Drive	60V	2A	290 mOhm @ 2A, 10V	2.5V @ 1mA	2nC @ 5V	110pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
SI4940DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 4.2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고466,332	Logic Level Gate	40V	4.2A	36 mOhm @ 5.7A, 10V	1V @ 250µA (Min)	14nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MP6K31TR	Rohm Semiconductor	MOSFET 2N-CH 60V 2A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	패키지: 6-SMD, Flat Leads	재고7,808	Logic Level Gate	60V	2A	290 mOhm @ 2A, 10V	2.5V @ 1mA	2nC @ 5V	110pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
SIB914DK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 8V 1.5A PPAK SC75-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	패키지: PowerPAK? SC-75-6L Dual	재고3,328	Standard	8V	1.5A	113 mOhm @ 2.5A, 4.5V	800mV @ 250µA	2.6nC @ 5V	125pF @ 4V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
NDC7002N_SB9G007	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 0.51A 6-SSOT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 510mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고6,160	Logic Level Gate	50V	510mA	2 Ohm @ 510mA, 10V	2.5V @ 250µA	1nC @ 10V	20pF @ 25V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
APTM50A15FT1G	Microsemi Corporation	MOSFET 2N-CH 500V 25A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고3,776	Standard	500V	25A	180 mOhm @ 21A, 10V	5V @ 1mA	170nC @ 10V	5448pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
FDMJ1028N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 3.2A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-WFDFN Exposed Pad	재고2,080	Logic Level Gate	20V	3.2A	90 mOhm @ 3.2A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	200pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-MicroFET (2x2)
FDW2601NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 8.2A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고120,360	Logic Level Gate	30V	8.2A	15 mOhm @ 8.2A, 4.5V	1.5V @ 250µA	30nC @ 4.5V	1840pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDS8333C	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고237,612	Logic Level Gate	30V	4.1A, 3.4A	80 mOhm @ 4.1A, 10V	3V @ 250µA	6.6nC @ 4.5V	282pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDC6000NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.3A 6SSOT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.3A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6 FLMP	패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	재고12,192	Logic Level Gate	20V	7.3A	20 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	11nC @ 4.5V	840pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6 FLMP
MMDF2P02HDR2	ON Semiconductor	MOSFET 2P-CH 20V 3.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고17,700	Logic Level Gate	20V	3.3A	160 mOhm @ 2A, 10V	2V @ 250µA	20nC @ 10V	588pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IPG20N06S4L14ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: 8-PowerVDFN	재고6,944	Logic Level Gate	60V	20A	13.7 mOhm @ 17A, 10V	2.2V @ 20µA	39nC @ 10V	2890pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
APTC60DDAM24T3G	Microsemi Corporation	MOSFET 2N-CH 600V 95A SP3 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고4,560	Super Junction	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
EFC6617R-A-TF	ON Semiconductor	MOSFET N-CH DUAL 2.5V 6CSP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,120	-	-	-	-	-	-	-	-	-	-	-	-
DMTH6016LSD-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,376	Standard	-	7.6A (Ta)	19.5 mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC4040SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 T&R 2 FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Power - Max: 17.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,504	Logic Level Gate	40V	7.5A (Ta)	25 mOhm @ 3A, 10V	1.8V @ 250µA	16nC @ 4.5V	1790pF @ 20V	17.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3055LFDB-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고4,960	Standard	-	5A (Ta)	40 mOhm @ 3A, 4.5V	1.5V @ 250µA	5.3nC @ 4.5V	458pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
AO6804A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 5A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고629,016	Logic Level Gate	20V	5A	28 mOhm @ 5A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	225pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI1028X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고42,000	Logic Level Gate	30V	-	650 mOhm @ 500mA, 10V	2.5V @ 250µA	2nC @ 10V	16pF @ 15V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SIB900EDK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.5A SC-75-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	패키지: PowerPAK? SC-75-6L Dual	재고144,000	Logic Level Gate	20V	1.5A	225 mOhm @ 1.6A, 4.5V	1V @ 250µA	1.7nC @ 4.5V	-	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
APTC60AM18SCG	Microsemi Corporation	MOSFET 2N-CH 600V 143A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 143A Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 833W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고7,376	Standard	600V	143A	18 mOhm @ 71.5A, 10V	3.9V @ 4mA	1036nC @ 10V	28000pF @ 25V	833W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
FDS6890A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고56,208	Logic Level Gate	20V	7.5A	18 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	32nC @ 4.5V	2130pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
QH8MA3TCR	Rohm Semiconductor	MOSFET N/P-CH 30V TSMT8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: 8-SMD, Flat Lead	재고6,192	Standard	30V	7A, 5.5A	29 mOhm @ 7A, 10V	2.5V @ 1mA	7.2nC @ 10V	300pF @ 15V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
EM6K31T2R	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고60,000	Logic Level Gate	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
SI4590DY-T1-GE3	Vishay Siliconix	MOSFET N/P CHAN 100V SO8 DUAL FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V Power - Max: 2.4W, 3.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고24,378	-	100V	3.4A, 2.8A	57 mOhm @ 2A, 10V	2.5V @ 250µA	11.5nC @ 10V	360pF @ 50V	2.4W, 3.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

IRFI4019HG-117P

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Power - Max: 18W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack (Formed Leads)
Supplier Device Package: TO-220-5 Full-Pak

패키지: TO-220-5 Full Pack (Formed Leads)

재고48,108

Standard

150V

8.7A

95 mOhm @ 5.2A, 10V

4.9V @ 50µA

20nC @ 10V

810pF @ 25V

18W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack (Formed Leads)

TO-220-5 Full-Pak

BSO150N03

Infineon Technologies

MOSFET 2N-CH 30V 7.6A 8DSO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고667,368

Standard

30V

7.6A

15 mOhm @ 9.1A, 10V

2V @ 25µA

15nC @ 5V

1890pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

IRF7338PBF

Infineon Technologies

MOSFET N/P-CH 12V 6.3A/3A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고64,632

Logic Level Gate

12V

6.3A, 3A

34 mOhm @ 6A, 4.5V

1.5V @ 250µA

8.6nC @ 4.5V

640pF @ 9V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF5850TR

Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고6,592

Logic Level Gate

20V

2.2A

135 mOhm @ 2.2A, 4.5V

1.2V @ 250µA

5.4nC @ 4.5V

320pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

VQ1006P

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

패키지: -

재고6,168

Logic Level Gate

90V

400mA

4.5 Ohm @ 1A, 10V

2.5V @ 1mA

-

60pF @ 25V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

MP6K31TCR

Rohm Semiconductor

MOSFET 2N-CH 60V 2A MPT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6

패키지: 6-SMD, Flat Leads

재고5,776

Logic Level Gate, 4V Drive

60V

2A

290 mOhm @ 2A, 10V

2.5V @ 1mA

2nC @ 5V

110pF @ 10V

2W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

MPT6

SI4940DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 4.2A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고466,332

Logic Level Gate

40V

4.2A

36 mOhm @ 5.7A, 10V

1V @ 250µA (Min)

14nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MP6K31TR

Rohm Semiconductor

MOSFET 2N-CH 60V 2A MPT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6

패키지: 6-SMD, Flat Leads

재고7,808

Logic Level Gate

60V

2A

290 mOhm @ 2A, 10V

2.5V @ 1mA

2nC @ 5V

110pF @ 10V

2W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

MPT6

SIB914DK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 8V 1.5A PPAK SC75-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

패키지: PowerPAK? SC-75-6L Dual

재고3,328

Standard

8V

1.5A

113 mOhm @ 2.5A, 4.5V

800mV @ 250µA

2.6nC @ 5V

125pF @ 4V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

NDC7002N_SB9G007

Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 0.51A 6-SSOT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고6,160

Logic Level Gate

50V

510mA

2 Ohm @ 510mA, 10V

2.5V @ 250µA

1nC @ 10V

20pF @ 25V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

APTM50A15FT1G

Microsemi Corporation

MOSFET 2N-CH 500V 25A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고3,776

Standard

500V

25A

180 mOhm @ 21A, 10V

5V @ 1mA

170nC @ 10V

5448pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

FDMJ1028N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.2A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-WFDFN Exposed Pad

재고2,080

Logic Level Gate

20V

3.2A

90 mOhm @ 3.2A, 4.5V

1.5V @ 250µA

3nC @ 4.5V

200pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-MicroFET (2x2)

FDW2601NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8.2A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고120,360

Logic Level Gate

30V

8.2A

15 mOhm @ 8.2A, 4.5V

1.5V @ 250µA

30nC @ 4.5V

1840pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDS8333C

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고237,612

Logic Level Gate

30V

4.1A, 3.4A

80 mOhm @ 4.1A, 10V

3V @ 250µA

6.6nC @ 4.5V

282pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDC6000NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6SSOT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6 FLMP

패키지: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

재고12,192

Logic Level Gate

20V

7.3A

20 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

11nC @ 4.5V

840pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6 FLMP

MMDF2P02HDR2

ON Semiconductor

MOSFET 2P-CH 20V 3.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고17,700

Logic Level Gate

20V

3.3A

160 mOhm @ 2A, 10V

2V @ 250µA

20nC @ 10V

588pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IPG20N06S4L14ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: 8-PowerVDFN

재고6,944

Logic Level Gate

60V

20A

13.7 mOhm @ 17A, 10V

2.2V @ 20µA

39nC @ 10V

2890pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

APTC60DDAM24T3G

Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고4,560

Super Junction

600V

95A

24 mOhm @ 47.5A, 10V

3.9V @ 5mA

300nC @ 10V

14400pF @ 25V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

EFC6617R-A-TF

ON Semiconductor

MOSFET N-CH DUAL 2.5V 6CSP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,120

-

DMTH6016LSD-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,376

Standard

-

7.6A (Ta)

19.5 mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

864pF @ 30V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC4040SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8 T&R 2

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Power - Max: 17.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,504

Logic Level Gate

40V

7.5A (Ta)

25 mOhm @ 3A, 10V

1.8V @ 250µA

16nC @ 4.5V

1790pF @ 20V

17.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3055LFDB-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고4,960

Standard

-

5A (Ta)

40 mOhm @ 3A, 4.5V

1.5V @ 250µA

5.3nC @ 4.5V

458pF @ 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

AO6804A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 5A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고629,016

Logic Level Gate

20V

5A

28 mOhm @ 5A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

225pF @ 10V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI1028X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고42,000

Logic Level Gate

30V

-

650 mOhm @ 500mA, 10V

2.5V @ 250µA

2nC @ 10V

16pF @ 15V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SIB900EDK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

패키지: PowerPAK? SC-75-6L Dual

재고144,000

Logic Level Gate

20V

1.5A

225 mOhm @ 1.6A, 4.5V

1V @ 250µA

1.7nC @ 4.5V

-

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

APTC60AM18SCG

Microsemi Corporation

MOSFET 2N-CH 600V 143A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 143A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 833W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고7,376

Standard

600V

143A

18 mOhm @ 71.5A, 10V

3.9V @ 4mA

1036nC @ 10V

28000pF @ 25V

833W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

FDS6890A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고56,208

Logic Level Gate

20V

7.5A

18 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

32nC @ 4.5V

2130pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

QH8MA3TCR

Rohm Semiconductor

MOSFET N/P-CH 30V TSMT8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: 8-SMD, Flat Lead

재고6,192

Standard

30V

7A, 5.5A

29 mOhm @ 7A, 10V

2.5V @ 1mA

7.2nC @ 10V

300pF @ 15V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

EM6K31T2R

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고60,000

Logic Level Gate

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

SI4590DY-T1-GE3

Vishay Siliconix

MOSFET N/P CHAN 100V SO8 DUAL

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Power - Max: 2.4W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고24,378

-

100V

3.4A, 2.8A

57 mOhm @ 2A, 10V

2.5V @ 250µA

11.5nC @ 10V

360pF @ 50V

2.4W, 3.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO