The new memory chip provides double bandwidth for high performance solutions | Heisener Electronics
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The new memory chip provides double bandwidth for high performance solutions

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포스트 날짜: 2022-08-15, Infineon Technologies

     Infineon Technologies has added HYPERRAM 3.0 to its portfolio of high-bandwidth, low-pin-count memory solutions. It is ideal for applications that require extended RAM, combined with video buffering, factory autoV2X, and applications that require scraper memory for intense math calculations.the device offers a new 16-bit extended version of the HyperBus interface, doubling the throughput to 800MBps. With this solution, the company offers a combination of high-bandwidth memory with low pin count and low power consumption.

   The company is a standalone PSRAM-based volatile memory that provides an easy and cost-optimized way to add expansion memory. Data rates are comparable to SDR DRAM, but with lower pin count and power requirements. The increased data throughput per pin of the HyperBus interface makes it possible to use MCUs with fewer pins and PCBs with fewer layers. These offer the opportunity for low-complexity and, therefore, cost-optimized designs to support target applications.

     With nearly three decades of storage solutions knowledge, we're excited to bring another industry first to market. The new HYPERRAM 3.0 memory solution achieves much higher throughput per pin than existing technologies on the market such as psram and SDR dram,” said Ramesh Chettuvetty, Senior Director of Applications and Marketing at Infineon Automotive. “Our low The power consumption characteristics enable better power consumption without sacrificing throughput, which also makes this memory ideal for industrial and IoT solutions. "

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