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Vishay Siliconix |
MOSFET N-CH 20V 3.1A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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패키지: 6-TSSOP, SC-88, SOT-363 |
재고2,682,012 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고42,000 |
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Vishay Siliconix |
MOSFET N-CH 200V 18.3A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (SH)
- Package / Case: 10-PolarPAK? (SH)
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패키지: 10-PolarPAK? (SH) |
재고6,800 |
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Vishay Siliconix |
MOSFET P-CH 30V 4.7A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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패키지: SOT-23-6 Thin, TSOT-23-6 |
재고7,840 |
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Vishay Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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패키지: PowerPAK? SO-8 |
재고11,196 |
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Vishay Siliconix |
MOSFET P-CH 30V 14A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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패키지: PowerPAK? SO-8 |
재고13,536 |
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Vishay Siliconix |
MOSFET P-CH 30V 385MA SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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패키지: TO-236-3, SC-59, SOT-23-3 |
재고1,285,656 |
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Vishay Siliconix |
MOSFET P-CH 20V 10A 2X2 4-MFP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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패키지: 4-XFBGA, CSPBGA |
재고6,324 |
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Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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패키지: 4-DIP (0.300", 7.62mm) |
재고14,340 |
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Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고60,000 |
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Vishay Siliconix |
MOSFET N-CH 100V 40A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고7,184 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고3,648 |
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Vishay Siliconix |
MOSFET N-CH 30V 5.9A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.31W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고20,040 |
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Vishay Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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패키지: TO-236-3, SC-59, SOT-23-3 |
재고716,904 |
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Vishay Siliconix |
MOSFET N-CH 500V 3.1A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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패키지: TO-220-3 Full Pack, Isolated Tab |
재고74,244 |
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Vishay Siliconix |
MOSFET N-CH 800V 1.8A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고4,976 |
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Vishay Siliconix |
MOSFET N-CH 150V 20.2A 1212-8S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
- Package / Case: PowerPAK? 1212-8S
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패키지: PowerPAK? 1212-8S |
재고23,850 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.1A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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패키지: TO-220-3 Full Pack, Isolated Tab |
재고252,000 |
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Vishay Siliconix |
MOSFET 2N-CH 20V 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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패키지: 8-TSSOP (0.173", 4.40mm Width) |
재고149,952 |
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Vishay Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.3A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고202,800 |
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Vishay Siliconix |
MOSFET 2N-CH 20V 6A 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
- Power - Max: 17.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
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패키지: PowerPAK? 1212-8 Dual |
재고19,860 |
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Vishay Siliconix |
MOSFET 2P-CH 12V 4.9A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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패키지: 8-TSSOP (0.173", 4.40mm Width) |
재고88,788 |
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Vishay Siliconix |
IC REG DL BCK/LNR SYNC MLP55-32L
- Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
- Function: Any Function
- Number of Outputs: 2
- Frequency - Switching: 200kHz ~ 1MHz
- Voltage/Current - Output 1: 0.6 V ~ 5.5 V, 6A
- Voltage/Current - Output 2: Adj to 0.75V, 200mA
- Voltage/Current - Output 3: -
- w/LED Driver: No
- w/Supervisor: No
- w/Sequencer: No
- Voltage - Supply: 3 V ~ 28 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-PowerWFQFN
- Supplier Device Package: PowerPAK? MLP55-32
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패키지: 32-PowerWFQFN |
재고3,376 |
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Vishay Siliconix |
IC BI-DIR BATT SWITCH WCSP12
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 2.3 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 5A
- Rds On (Typ): 6.5 mOhm
- Input Type: -
- Features: Slew Rate Controlled
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 12-UFBGA, WLCSP
- Supplier Device Package: 12-WCSP (1.3x1.7)
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패키지: 12-UFBGA, WLCSP |
재고4,896 |
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Vishay Siliconix |
IC ANALOG SWITCH
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: -
- Number of Circuits: -
- On-State Resistance (Max): -
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): -
- Current - Leakage (IS(off)) (Max): -
- Crosstalk: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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패키지: - |
재고2,912 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16TSSOP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 17 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 19ns, 12ns
- -3db Bandwidth: 280MHz
- Charge Injection: 5pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -95dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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패키지: 16-TSSOP (0.173", 4.40mm Width) |
재고6,208 |
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Vishay Siliconix |
IC SWITCH DUAL SPDT 6TSOP
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 1
- On-State Resistance (Max): 800 mOhm
- Channel-to-Channel Matching (ΔRon): 60 mOhm (Max)
- Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 35ns, 15ns
- -3db Bandwidth: 40MHz
- Charge Injection: 224pC
- Channel Capacitance (CS(off), CD(off)): 50pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -57dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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패키지: SOT-23-6 Thin, TSOT-23-6 |
재고5,120 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16SOIC
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 60 Ohm
- Channel-to-Channel Matching (ΔRon): 1 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 40 V
- Voltage - Supply, Dual (V±): ±3 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 130ns, 100ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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패키지: 16-SOIC (0.154", 3.90mm Width) |
재고5,936 |
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Vishay Siliconix |
IC SWITCH CMOS 14DIP
- Switch Circuit: DPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 50 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 300ns, 250ns
- -3db Bandwidth: -
- Charge Injection: 8pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -74dB @ 500kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-PDIP
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패키지: 14-DIP (0.300", 7.62mm) |
재고7,392 |
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Vishay Siliconix |
IC MULTIPLEXER 16X1 28PLCC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 16:1
- Number of Circuits: 1
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 200ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 15pC
- Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 28-LCC (J-Lead)
- Supplier Device Package: 28-PLCC (11.51x11.51)
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패키지: 28-LCC (J-Lead) |
재고38,634 |
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