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Vishay Siliconix |
MOSFET N-CH 40V 30UA TO-206AF
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-206AF (TO-72)
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패키지: TO-206AF, TO-72-4 Metal Can |
재고16,968 |
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Vishay Siliconix |
MOSFET N-CH 30V 90A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 257nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12065pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 28.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고60,324 |
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Vishay Siliconix |
MOSFET N-CH 20V 40A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,800 |
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Vishay Siliconix |
MOSFET N-CH 20V 9A SC75-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-75-6L Single
- Package / Case: PowerPAK? SC-75-6L
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패키지: PowerPAK? SC-75-6L |
재고5,984 |
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Vishay Siliconix |
MOSFET N-CH 200V 27A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고120,012 |
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Vishay Siliconix |
MOSFET N-CH 20V 2A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 830mW (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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패키지: SOT-23-6 Thin, TSOT-23-6 |
재고4,848 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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패키지: TO-220-3 Full Pack, Isolated Tab |
재고4,688 |
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Vishay Siliconix |
MOSFET N-CH 100V 40A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고2,912 |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고4,368 |
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Vishay Siliconix |
MOSFET P-CH 60V 3.6A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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패키지: PowerPAK? 1212-8 |
재고656,856 |
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Vishay Siliconix |
MOSFET P-CH 40V 50A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고63,264 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고145,668 |
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Vishay Siliconix |
MOSFET P-CH 40V 30A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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패키지: PowerPAK? SO-8 |
재고3,312 |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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패키지: PowerPAK? SO-8 |
재고890,244 |
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Vishay Siliconix |
MOSFET P-CH 20V 5A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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패키지: SOT-23-6 Thin, TSOT-23-6 |
재고416,340 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.8A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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패키지: TO-261-4, TO-261AA |
재고106,392 |
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Vishay Siliconix |
MOSFET P-CH 20V 350MA SC-75A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75A
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패키지: SC-75A |
재고666,288 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고338,916 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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패키지: 4-DIP (0.300", 7.62mm) |
재고150,600 |
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Vishay Siliconix |
MOSFET N-CH 60V 5.6A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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패키지: PowerPAK? 1212-8 |
재고614,472 |
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Vishay Siliconix |
MOSFET 2P-CH 8V 4A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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패키지: 8-SMD, Flat Lead |
재고60,720 |
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Vishay Siliconix |
MOSFET 2P-CH 30V 4.5A SC-70-6L
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 6.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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패키지: PowerPAK? SC-70-6 Dual |
재고4,080 |
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Vishay Siliconix |
MOSFET N/P-CH 20V 2A 6-TSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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패키지: SOT-23-6 Thin, TSOT-23-6 |
재고658,140 |
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Vishay Siliconix |
IC REG CTRLR PWM CM 8SOIC
- Output Isolation: Isolated
- Internal Switch(s): No
- Voltage - Breakdown: -
- Topology: Flyback
- Voltage - Start Up: 12.5V
- Voltage - Supply (Vcc/Vdd): 8.3 V ~ 12 V
- Duty Cycle: 99%
- Frequency - Switching: 46kHz
- Power (Watts): -
- Fault Protection: Current Limiting
- Control Features: Frequency Control
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- Mounting Type: Surface Mount
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고37,140 |
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Vishay Siliconix |
IC SWITCH DUAL SPST 8SOIC
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 30 Ohm
- Channel-to-Channel Matching (ΔRon): 400 mOhm
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 75ns, 50ns
- -3db Bandwidth: -
- Charge Injection: 2pC
- Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
- Current - Leakage (IS(off)) (Max): 100pA
- Crosstalk: -90dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고2,000 |
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Vishay Siliconix |
IC SWITCH DUAL DPST 16DIP
- Switch Circuit: DPST - NO
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 50 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 130ns (Typ)
- -3db Bandwidth: -
- Charge Injection: 10pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
- Current - Leakage (IS(off)) (Max): 5nA
- Crosstalk: -74dB @ 500kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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패키지: 16-DIP (0.300", 7.62mm) |
재고4,768 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT 16SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 100ns
- -3db Bandwidth: -
- Charge Injection: 60pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -94.8dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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패키지: 16-SOIC (0.154", 3.90mm Width) |
재고75,432 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16DIP
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 35 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 5 V ~ 44 V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 175ns, 145ns
- -3db Bandwidth: -
- Charge Injection: 5pC
- Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
- Current - Leakage (IS(off)) (Max): 250pA
- Crosstalk: -85dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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패키지: 16-DIP (0.300", 7.62mm) |
재고6,176 |
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Vishay Siliconix |
IC SWITCH DUAL SPST 10QFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 110 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 70ns, 55ns
- -3db Bandwidth: 720MHz
- Charge Injection: 23.5pC
- Channel Capacitance (CS(off), CD(off)): 2pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -67dB @ 10MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 10-UFQFN
- Supplier Device Package: 10-miniQFN (1.4x1.8)
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패키지: 10-UFQFN |
재고864,000 |
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Vishay Siliconix |
IC AMP/VIDEO/MUX LP 4/8CH 28PLCC
- Applications: Ultrasound, Video
- Multiplexer/Demultiplexer Circuit: 4:1
- Switch Circuit: -
- Number of Channels: 2
- On-State Resistance (Max): 90 Ohm
- Voltage - Supply, Single (V+): 10 V ~ 21 V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: 500MHz
- Features: T-Switch Configuration
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 28-LCC (J-Lead)
- Supplier Device Package: 28-PLCC (11.51x11.51)
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패키지: 28-LCC (J-Lead) |
재고76,728 |
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