페이지 12 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 브리지 정류기 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 브리지 정류기

기록 1,132
페이지  12/38
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
B2S-E3/80
Vishay Semiconductor Diodes Division

DIODE BRIDGE0.5A 200V MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 500mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
패키지: TO-269AA, 4-BESOP
재고7,984
Standard
200V
500mA
1V @ 500mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
DF10MA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 1000V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고3,520
Standard
1000V
1A
1.1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
hot DF08MA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 800V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고47,256
Standard
800V
1A
1.1V @ 1A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
DF04MA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 400V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고3,264
Standard
400V
1A
1.1V @ 1A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
hot DF01MA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 100V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고97,920
Standard
100V
1A
1.1V @ 1A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
DF005MA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 50V DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고3,248
Standard
50V
1A
1.1V @ 1A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
B80C800G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 125V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 125V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 125V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고4,064
Standard
125V
900mA
1V @ 900mA
10µA @ 125V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
B40C1000G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1A 65V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 65V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 65V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고3,936
Standard
65V
1A
1V @ 1A
10µA @ 65V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
B380C800G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 600V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고3,520
Standard
600V
900mA
1V @ 900mA
10µA @ 600V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
B380C1000G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1A 600V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고7,040
Standard
600V
1A
1V @ 1A
10µA @ 600V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
hot MBL110S-M3/I
Vishay Semiconductor Diodes Division

RECT BRIDGE 1A 1000V MBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
패키지: 4-SMD, Gull Wing
재고24,000
Standard
1000V
1A
950mV @ 400mA
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMD
MBL108S-M3/I
Vishay Semiconductor Diodes Division

RECT BRIDGE 1A 800V MBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
패키지: 4-SMD, Gull Wing
재고2,256
Standard
800V
1A
950mV @ 400mA
5µA @ 800V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMD
hot MBL106S-M3/I
Vishay Semiconductor Diodes Division

RECT BRIDGE 1A 600V MBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
패키지: 4-SMD, Gull Wing
재고48,000
Standard
600V
1A
950mV @ 400mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMD
MBL104S-M3/I
Vishay Semiconductor Diodes Division

RECT BRIDGE 1A 400V MBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
패키지: 4-SMD, Gull Wing
재고3,440
Standard
400V
1A
950mV @ 400mA
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMD
B40C800DM-E3/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 65V DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 65V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 65V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고7,488
Standard
65V
900mA
1V @ 900mA
10µA @ 65V
-40°C ~ 125°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
B380C800DM-E3/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 600V DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고6,960
Standard
600V
900mA
1V @ 900mA
10µA @ 600V
-40°C ~ 125°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
B250C800DM-E3/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 400V 6DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고6,288
Standard
400V
900mA
1V @ 900mA
10µA @ 400V
-40°C ~ 125°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
VS-70MT120KPBF
Vishay Semiconductor Diodes Division

MOD IGBT 1200V 70A 3-PHASE MTP

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
패키지: MT-K Module
재고6,208
Standard
1200V
70A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MT-K Module
MT-K
VS-36MT140
Vishay Semiconductor Diodes Division

RECT BRIDGE 3-PHA 1400V 35A D-63

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 1400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, D-63
  • Supplier Device Package: D-63
패키지: 5-Square, D-63
재고4,240
Standard
1400V
35A
-
10µA @ 1400V
-55°C ~ 150°C (TJ)
QC Terminal
5-Square, D-63
D-63
VS-26MT140
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1400V 25A D-63

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 100µA @ 1400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, D-63
  • Supplier Device Package: D-63
패키지: 5-Square, D-63
재고7,968
Standard
1400V
25A
-
100µA @ 1400V
-55°C ~ 150°C (TJ)
QC Terminal
5-Square, D-63
D-63
VS-26MT10
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 100V 25A D-63

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, D-63
  • Supplier Device Package: D-63
패키지: 5-Square, D-63
재고3,760
Standard
100V
25A
-
100µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
5-Square, D-63
D-63
VS-GBPC3504W
Vishay Semiconductor Diodes Division

RECT BRIDGE 1-PH 400V 35A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고5,920
Standard
400V
35A
1.1V @ 17.5A
-
-40°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
PB4010-E3/45
Vishay Semiconductor Diodes Division

RECT BRIDGE 40A 1000V ENHANCE PB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: isoCINK+? PB
패키지: 4-SIP, PB
재고6,992
Standard
1000V
40A
1.1V @ 20A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
isoCINK+? PB
PB3010-E3/45
Vishay Semiconductor Diodes Division

RECT BRIDGE 30A 1000V ENHANCE PB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: isoCINK+? PB
패키지: 4-SIP, PB
재고5,792
Standard
1000V
30A
1.1V @ 15A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
isoCINK+? PB
PB3006-E3/45
Vishay Semiconductor Diodes Division

RECT BRIDGE 30A 600V ENHANCE PB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: isoCINK+? PB
패키지: 4-SIP, PB
재고2,800
Standard
600V
30A
1.1V @ 15A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
isoCINK+? PB
BU2510-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 1000V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고4,992
Standard
1000V
25A
1.05V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BU2508-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 800V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고2,432
Standard
800V
25A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BU2506-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 600V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고4,768
Standard
600V
25A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BU25H08-E3/P
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 800V STD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고3,568
Standard
600V
3.5A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 175°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
BU25H08-E3/A
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 800V STD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고5,984
Standard
600V
3.5A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 175°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU