페이지 2 - Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - 어레이 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - 어레이

기록 45
페이지  2/2
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SM6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고5,232
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
300mW
200MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
HN2A01FE-Y(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고5,168
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 800MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고2,176
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
800MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN2C01FE-GR(T5L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고6,896
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
60MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 120V 0.1A SM6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고3,408
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
100MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
HN3C51F-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS 2NPN 120V 0.1A SM6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고6,544
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
350 @ 2mA, 6V
300mW
100MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SM6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고7,088
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
300mW
100MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SM6
ULN2803APG,CN
Toshiba Semiconductor and Storage

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.47W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고5,952
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
1.47W
-
-40°C ~ 85°C (TA)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage

TRANS 8NPN DARL 50V 0.5A 18SOL

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.31W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOL
패키지: 18-SOIC (0.295", 7.50mm Width)
재고4,608
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
1.31W
-
-40°C ~ 85°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOL
TPC6901(TE85L,F,M)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 6VS

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A, 700mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: VS-6 (2.9x2.8)
패키지: SOT-23-6 Thin, TSOT-23-6
재고4,528
1A, 700mA
50V
170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
100nA (ICBO)
400 @ 100mA, 2V / 200 @ 100mA, 2V
400mW
-
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
VS-6 (2.9x2.8)
HN1A01FE-GR,LF
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고6,864
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
80MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
HN1B04FU-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고5,264
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200mW
150MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN1C01FU-GR,LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,888
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200mW
80MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
HN1B01FU-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6-PLN

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW, 210mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고6,128
150mA
50V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200mW, 210mW
150MHz
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
2SA1618-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SMV

  • Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고6,160
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
300mW
80MHz
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV