페이지 5 - Rohm Semiconductor 제품 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

기록 176
페이지  5/6
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
hot EMB10T2R
Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고960,000
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
EMA2T2R
Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고3,504
100mA
50V
47k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
hot EMG4T2R
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고96,000
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
IMB4AT110
Rohm Semiconductor

TRANS PREBIAS DUAL PNP SMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
패키지: SC-74, SOT-457
재고4,656
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
300mW
Surface Mount
SC-74, SOT-457
SMT6
hot UMG7NTR
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
패키지: 5-TSSOP, SC-70-5, SOT-353
재고360,000
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
500nA (ICBO)
250MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5
EMF24T2R
Rohm Semiconductor

TRANS NPN PREBIAS/NPN 0.15W EMT6

  • Transistor Type: 1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max): 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 180MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고7,776
100mA, 150mA
50V
10k
10k
30 @ 5mA, 5V / 180 @ 1mA, 6V
300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
500nA
250MHz, 180MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
hot EMF17T2R
Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W EMT6

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 140MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고152,340
100mA, 150mA
50V
2.2k
2.2k
20 @ 20mA, 5V / 180 @ 1mA, 6V
300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
500nA
250MHz, 140MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
EMA11T2R
Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고6,272
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
hot EMB9T2R
Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고1,975,488
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
EMB4T2R
Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고2,592
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
EMG1T2R
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고7,568
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
EMA8T2R
Rohm Semiconductor

TRANS PREBIAS DUAL PNP EMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고7,056
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
hot FMG5AT148
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMT5
패키지: SC-74A, SOT-753
재고180,408
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
300mW
Surface Mount
SC-74A, SOT-753
SMT5
IMB1AT110
Rohm Semiconductor

TRANS PREBIAS DUAL PNP SMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
패키지: SC-74, SOT-457
재고2,560
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
SC-74, SOT-457
SMT6
hot UMH4NTN
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고558,600
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot UMH14NTR
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고144,000
100mA
50V
47k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
IMH15AT110
Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
패키지: SC-74, SOT-457
재고7,312
100mA
50V
47k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
300mW
Surface Mount
SC-74, SOT-457
SMT6
FMG6AT148
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMT5
패키지: SC-74A, SOT-753
재고2,832
100mA
50V
47k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
300mW
Surface Mount
SC-74A, SOT-753
SMT5
hot UMH7NTR
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고756,000
100mA
50V
4.7k
-
100 @ 1mA, 5V
300mV @ 250µA, 5mA
-
-
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot UMC3NTR
Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT5

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
패키지: 5-TSSOP, SC-70-5, SOT-353
재고1,810,272
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5
UMA6NTR
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
패키지: 5-TSSOP, SC-70-5, SOT-353
재고5,632
100mA
50V
47k
-
100 @ 1mA, 5V
300mV @ 500µA, 5mA
500nA (ICBO)
250MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5
hot UMF23NTR
Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 140MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고210,660
100mA, 150mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
500nA
250MHz, 140MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
UMF28NTR
Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 140MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고2,512
100mA, 150mA
50V
22k
47k
68 @ 5mA, 5V / 180 @ 1mA, 6V
300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
500nA
250MHz, 140MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
UMB6NTR
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고5,872
30mA
50V
47k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot UMB4NTN
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고1,169,880
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot UMA8NTR
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
패키지: 5-TSSOP, SC-70-5, SOT-353
재고665,640
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5
UMG6NTR
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
패키지: 5-TSSOP, SC-70-5, SOT-353
재고5,152
100mA
50V
47k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5
UMB8NTR
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,280
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot UMB1NTN
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고145,176
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
UMA7NTR
Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: UMT5
패키지: 5-TSSOP, SC-70-5, SOT-353
재고4,416
100mA
50V
4.7k
10k
30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
UMT5