페이지 9 - ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NTMD6601NR2G	ON Semiconductor	MOSFET 2N-CH 80V 1.1A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고8,760	Logic Level Gate	80V	1.1A	215 mOhm @ 2.2A, 10V	3V @ 250µA	15nC @ 10V	400pF @ 25V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTJD3158CT2G	ON Semiconductor	MOSFET N/P-CH 20V SC88-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고378,300	Logic Level Gate	20V	630mA, 820mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NTLUD3191PZTAG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고5,616	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
NTLUD3191PZTBG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고3,520	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
ECH8619-TL-E	ON Semiconductor	MOSFET N/P-CH 60V 3A/2A ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고14,196	Logic Level Gate	60V	3A, 2A	93 mOhm @ 1.5A, 10V	-	12.8nC @ 10V	560pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
NTLTD7900ZR2G	ON Semiconductor	MOSFET 2N-CH 20V 6A 8MICRO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 16V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: Micro8?	패키지: 8-VDFN Exposed Pad	재고133,464	Logic Level Gate	20V	6A	26 mOhm @ 6.5A, 4.5V	1V @ 250µA	18nC @ 4.5V	15pF @ 16V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	Micro8?
NTLGD3502NT1G	ON Semiconductor	MOSFET 2N-CH 20V 4.3A/3.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.74W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (3x3)	패키지: 6-VDFN Exposed Pad	재고15,468	Logic Level Gate	20V	4.3A, 3.6A	60 mOhm @ 4.3A, 4.5V	2V @ 250µA	4nC @ 4.5V	480pF @ 10V	1.74W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (3x3)
NTHD5903T1G	ON Semiconductor	MOSFET 2P-CH 20V 2.2A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고93,600	Logic Level Gate	20V	2.2A	155 mOhm @ 2.2A, 4.5V	600mV @ 250µA	7.4nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
NTHD4401PT1G	ON Semiconductor	MOSFET 2P-CH 20V 2.1A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고6,000,000	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	1.2V @ 250µA	6nC @ 4.5V	300pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
NTHD2102PT1G	ON Semiconductor	MOSFET 2P-CH 8V 3.4A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고1,996,464	Logic Level Gate	8V	3.4A	58 mOhm @ 3.4A, 4.5V	1.5V @ 250µA	16nC @ 2.5V	715pF @ 6.4V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
NTLJD3183CZTBG	ON Semiconductor	MOSFET N/P-CH 20V 6WDFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고4,544	Logic Level Gate	20V	2.6A, 2.2A	68 mOhm @ 2A, 4.5V	1V @ 250µA	7nC @ 4.5V	355pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTLJD3183CZTAG	ON Semiconductor	MOSFET N/P-CH 20V 6WDFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고5,824	Logic Level Gate	20V	2.6A, 2.2A	68 mOhm @ 2A, 4.5V	1V @ 250µA	7nC @ 4.5V	355pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTLJD3181PZTBG	ON Semiconductor	MOSFET 2P-CH 20V 2.2A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고4,096	Logic Level Gate	20V	2.2A	100 mOhm @ 2A, 4.5V	1V @ 250µA	7.8nC @ 4.5V	450pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTLJD3181PZTAG	ON Semiconductor	MOSFET 2P-CH 20V 2.2A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고3,632	Logic Level Gate	20V	2.2A	100 mOhm @ 2A, 4.5V	1V @ 250µA	7.8nC @ 4.5V	450pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTZD3156CT5G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고7,600	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTZD3156CT2G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고4,032	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTZD3156CT1G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고6,208	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTUD3171PZT5G	ON Semiconductor	MOSFET 2P-CH 20V 0.2A SOT-963 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고96,000	Logic Level Gate	20V	200mA	5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	13.5pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
MMDF3N04HDR2G	ON Semiconductor	MOSFET 2N-CH 40V 3.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,169,340	Logic Level Gate	40V	3.4A	80 mOhm @ 3.4A, 10V	3V @ 250µA	28nC @ 10V	900pF @ 32V	1.39W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLJD2104PTBG	ON Semiconductor	MOSFET 2P-CH 12V 2.4A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고4,288	Logic Level Gate	12V	2.4A	90 mOhm @ 3A, 4.5V	800mV @ 250µA	8nC @ 4.5V	467pF @ 6V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTLJD2104PTAG	ON Semiconductor	MOSFET 2P-CH 12V 2.4A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고5,248	Logic Level Gate	12V	2.4A	90 mOhm @ 3A, 4.5V	800mV @ 250µA	8nC @ 4.5V	467pF @ 6V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTGD3149CT1G	ON Semiconductor	MOSFET N/P-CH 20V 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.4A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고782,472	Logic Level Gate	20V	3.2A, 2.4A	60 mOhm @ 3.5A, 4.5V	1V @ 250µA	5.5nC @ 4.5V	387pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
NTJD4001NT2G	ON Semiconductor	MOSFET 2N-CH 30V 0.25A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고478,044	Standard	30V	250mA	1.5 Ohm @ 10mA, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NTGD3133PT1G	ON Semiconductor	MOSFET 2P-CH 20V 1.6A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 560mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고837,552	Logic Level Gate	20V	1.6A	145 mOhm @ 2.2A, 4.5V	1.4V @ 250µA	5.5nC @ 4.5V	400pF @ 10V	560mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
NTZD5110NT5G	ON Semiconductor	MOSFET 2N-CH 60V 0.294A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고51,120	Logic Level Gate	60V	294mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTZD3154NT2G	ON Semiconductor	MOSFET 2N-CH 20V 0.54A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고2,064	Standard	20V	540mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	150pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTUD3129PT5G	ON Semiconductor	MOSFET 2P-CH 20V 0.14A SOT-963 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고4,928	Logic Level Gate	20V	140mA	5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
NTUD3128NT5G	ON Semiconductor	MOSFET 2N-CH 20V 0.16A SOT-963 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고2,925,960	Logic Level Gate	20V	160mA	3 Ohm @ 100mA, 4.5V	1V @ 250µA	-	9pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
NTUD3127CT5G	ON Semiconductor	MOSFET N/P-CH 20V SOT-963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고181,152	Logic Level Gate	20V	160mA, 140mA	3 Ohm @ 100mA, 4.5V	1V @ 250µA	-	9pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
NTLJD4150PTBG	ON Semiconductor	MOSFET 2P-CH 30V 1.8A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 135 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고5,760	Logic Level Gate	30V	1.8A	135 mOhm @ 4A, 10V	2V @ 250µA	4.5nC @ 4.5V	300pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)

NTMD6601NR2G

ON Semiconductor

MOSFET 2N-CH 80V 1.1A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고8,760

Logic Level Gate

80V

1.1A

215 mOhm @ 2.2A, 10V

3V @ 250µA

15nC @ 10V

400pF @ 25V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTJD3158CT2G

ON Semiconductor

MOSFET N/P-CH 20V SC88-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고378,300

Logic Level Gate

20V

630mA, 820mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NTLUD3191PZTAG

ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고5,616

Logic Level Gate

20V

1.1A

250 mOhm @ 1.5A, 4.5V

1V @ 250µA

3.5nC @ 4.5V

160pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

NTLUD3191PZTBG

ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고3,520

Logic Level Gate

20V

1.1A

250 mOhm @ 1.5A, 4.5V

1V @ 250µA

3.5nC @ 4.5V

160pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-UDFN (1.6x1.6)

ECH8619-TL-E

ON Semiconductor

MOSFET N/P-CH 60V 3A/2A ECH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2A
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고14,196

Logic Level Gate

60V

3A, 2A

93 mOhm @ 1.5A, 10V

-

12.8nC @ 10V

560pF @ 20V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

NTLTD7900ZR2G

ON Semiconductor

MOSFET 2N-CH 20V 6A 8MICRO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 16V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: Micro8?

패키지: 8-VDFN Exposed Pad

재고133,464

Logic Level Gate

20V

6A

26 mOhm @ 6.5A, 4.5V

1V @ 250µA

18nC @ 4.5V

15pF @ 16V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

Micro8?

NTLGD3502NT1G

ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.74W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (3x3)

패키지: 6-VDFN Exposed Pad

재고15,468

Logic Level Gate

20V

4.3A, 3.6A

60 mOhm @ 4.3A, 4.5V

2V @ 250µA

4nC @ 4.5V

480pF @ 10V

1.74W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-DFN (3x3)

NTHD5903T1G

ON Semiconductor

MOSFET 2P-CH 20V 2.2A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고93,600

Logic Level Gate

20V

2.2A

155 mOhm @ 2.2A, 4.5V

600mV @ 250µA

7.4nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

NTHD4401PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고6,000,000

Logic Level Gate

20V

2.1A

155 mOhm @ 2.1A, 4.5V

1.2V @ 250µA

6nC @ 4.5V

300pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

NTHD2102PT1G

ON Semiconductor

MOSFET 2P-CH 8V 3.4A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6.4V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고1,996,464

Logic Level Gate

8V

3.4A

58 mOhm @ 3.4A, 4.5V

1.5V @ 250µA

16nC @ 2.5V

715pF @ 6.4V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

NTLJD3183CZTBG

ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고4,544

Logic Level Gate

20V

2.6A, 2.2A

68 mOhm @ 2A, 4.5V

1V @ 250µA

7nC @ 4.5V

355pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTLJD3183CZTAG

ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고5,824

Logic Level Gate

20V

2.6A, 2.2A

68 mOhm @ 2A, 4.5V

1V @ 250µA

7nC @ 4.5V

355pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTLJD3181PZTBG

ON Semiconductor

MOSFET 2P-CH 20V 2.2A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고4,096

Logic Level Gate

20V

2.2A

100 mOhm @ 2A, 4.5V

1V @ 250µA

7.8nC @ 4.5V

450pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTLJD3181PZTAG

ON Semiconductor

MOSFET 2P-CH 20V 2.2A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고3,632

Logic Level Gate

20V

2.2A

100 mOhm @ 2A, 4.5V

1V @ 250µA

7.8nC @ 4.5V

450pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTZD3156CT5G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고7,600

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

72pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTZD3156CT2G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고4,032

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

72pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTZD3156CT1G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고6,208

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

72pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTUD3171PZT5G

ON Semiconductor

MOSFET 2P-CH 20V 0.2A SOT-963

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고96,000

Logic Level Gate

20V

200mA

5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

13.5pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

MMDF3N04HDR2G

ON Semiconductor

MOSFET 2N-CH 40V 3.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,169,340

Logic Level Gate

40V

3.4A

80 mOhm @ 3.4A, 10V

3V @ 250µA

28nC @ 10V

900pF @ 32V

1.39W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTLJD2104PTBG

ON Semiconductor

MOSFET 2P-CH 12V 2.4A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고4,288

Logic Level Gate

12V

2.4A

90 mOhm @ 3A, 4.5V

800mV @ 250µA

8nC @ 4.5V

467pF @ 6V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTLJD2104PTAG

ON Semiconductor

MOSFET 2P-CH 12V 2.4A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고5,248

Logic Level Gate

12V

2.4A

90 mOhm @ 3A, 4.5V

800mV @ 250µA

8nC @ 4.5V

467pF @ 6V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTGD3149CT1G

ON Semiconductor

MOSFET N/P-CH 20V 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고782,472

Logic Level Gate

20V

3.2A, 2.4A

60 mOhm @ 3.5A, 4.5V

1V @ 250µA

5.5nC @ 4.5V

387pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

NTJD4001NT2G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고478,044

Standard

30V

250mA

1.5 Ohm @ 10mA, 4V

1.5V @ 100µA

1.3nC @ 5V

33pF @ 5V

272mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NTGD3133PT1G

ON Semiconductor

MOSFET 2P-CH 20V 1.6A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 560mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고837,552

Logic Level Gate

20V

1.6A

145 mOhm @ 2.2A, 4.5V

1.4V @ 250µA

5.5nC @ 4.5V

400pF @ 10V

560mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

NTZD5110NT5G

ON Semiconductor

MOSFET 2N-CH 60V 0.294A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고51,120

Logic Level Gate

60V

294mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.7nC @ 4.5V

24.5pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTZD3154NT2G

ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고2,064

Standard

20V

540mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

150pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTUD3129PT5G

ON Semiconductor

MOSFET 2P-CH 20V 0.14A SOT-963

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고4,928

Logic Level Gate

20V

140mA

5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

12pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

NTUD3128NT5G

ON Semiconductor

MOSFET 2N-CH 20V 0.16A SOT-963

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고2,925,960

Logic Level Gate

20V

160mA

3 Ohm @ 100mA, 4.5V

1V @ 250µA

-

9pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

NTUD3127CT5G

ON Semiconductor

MOSFET N/P-CH 20V SOT-963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고181,152

Logic Level Gate

20V

160mA, 140mA

3 Ohm @ 100mA, 4.5V

1V @ 250µA

-

9pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

NTLJD4150PTBG

ON Semiconductor

MOSFET 2P-CH 30V 1.8A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 135 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고5,760

Logic Level Gate

30V

1.8A

135 mOhm @ 4A, 10V

2V @ 250µA

4.5nC @ 4.5V

300pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)