페이지 273 - Micron Technology Inc. 제품

부품 번호	제조업체	설명	패키지	재고
EDFB232A1MA-GD-F-D	Micron Technology Inc.	LPDDR3 1GX32 PLASTIC GREEN VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,400
EDFP164A3PB-GD-F-D	Micron Technology Inc.	LPDDR3 192MX128 PLASTIC GREEN VF Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,120
M28W160FSB70ZA6E	Micron Technology Inc.	IC FLASH 16MBIT 70NS 64TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고78,012
M58LR256KB70ZC5W TR	Micron Technology Inc.	IC FLASH 256MBIT 70NS 79VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 79-VFBGA Supplier Device Package: 79-VFBGA (9x11)	패키지: 79-VFBGA	재고7,296
M36W0R6050U4ZSF TR	Micron Technology Inc.	IC FLASH PSRAM 96M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,704
MT44K32M18RB-093 IT:A	Micron Technology Inc.	IC RLDRAM 576MBIT 1.067GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 10ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-TBGA Supplier Device Package: 168-BGA	패키지: 168-TBGA	재고3,008
MT42L128M32D1LF-25 WT:A	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	패키지: 168-WFBGA	재고64,884
MT29F64G08AECABJ1-10Z:A TR	Micron Technology Inc.	IC FLASH 64GBIT 100MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	패키지: 132-VBGA	재고7,360
MT29F16G08ABACAWP-IT:C	Micron Technology Inc.	IC FLASH 16GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고392,184
MT47H128M8CF-25E IT:H	Micron Technology Inc.	IC SDRAM 1GBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고91,788
M25PX16-VZM6TP TR	Micron Technology Inc.	IC FLASH 16MBIT 75MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고3,824
MT46V16M16BG-6:F	Micron Technology Inc.	IC SDRAM 256MBIT 167MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x14)	패키지: 60-FBGA	재고6,128
MT28F800B5SG-8 TET TR	Micron Technology Inc.	IC FLASH 8MBIT 80NS 44SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 80ns Access Time: 80ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.496", 12.60mm Width) Supplier Device Package: 44-SOP	패키지: 44-SOIC (0.496", 12.60mm Width)	재고5,168
MT28F800B3WG-9 TET	Micron Technology Inc.	IC FLASH 8MBIT 90NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,320
MT43A4G80200NFH-S15:A	Micron Technology Inc.	HMC 32G NANA HBBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,440
MT46H128M16LFDD-48 WT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	패키지: 60-VFBGA	재고2,880
MT46V16M16P-5B IT:M	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고4,656
MT25QU512ABB1EW9-0SIT TR	Micron Technology Inc.	IC FLASH 512MBIT 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,760
M29F200FB5AN6E2	Micron Technology Inc.	IC FLASH 2MBIT 55NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8, 128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고3,200
MT25QU256ABA8E14-1SIT TR	Micron Technology Inc.	IC FLASH 256MBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고6,976
MT40A512M8RH-083E AAT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,480
MT53E512M32D2NP-046 WT:E TR	Micron Technology Inc.	LPDDR4 16G 512MX32 FBGA WT DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,160
MT53D4DCTW-DC	Micron Technology Inc.	LPDDR4 0 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,904
MT25QU128ABB1EW7-CAUT	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x5)(MLP8)	패키지: 8-WDFN Exposed Pad	재고7,872
MTFC128GAPALNS-AAT TR	Micron Technology Inc.	IC FLASH 1T MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,768
MT53B384M32D2NK-062 WT ES:B TR	Micron Technology Inc.	IC DRAM 12G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,424
MT25QU256ABA8E14-1SIT	Micron Technology Inc.	IC FLASH 256M SPI 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고6,288
MT53D384M32D2DS-053 XT:E TR	Micron Technology Inc.	IC DRAM 12G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,128
MT29TZZZ5D6DKFRL-093 W.9A6	Micron Technology Inc.	IC FLASH MEM 6G LPDDR2 MLC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,200
MT53E256M16D1DS-046 WT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,336

EDFB232A1MA-GD-F-D

Micron Technology Inc.

LPDDR3 1GX32 PLASTIC GREEN VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,400

EDFP164A3PB-GD-F-D

Micron Technology Inc.

LPDDR3 192MX128 PLASTIC GREEN VF

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,120

M28W160FSB70ZA6E

Micron Technology Inc.

IC FLASH 16MBIT 70NS 64TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고78,012

M58LR256KB70ZC5W TR

Micron Technology Inc.

IC FLASH 256MBIT 70NS 79VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 79-VFBGA
Supplier Device Package: 79-VFBGA (9x11)

패키지: 79-VFBGA

재고7,296

M36W0R6050U4ZSF TR

Micron Technology Inc.

IC FLASH PSRAM 96M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,704

MT44K32M18RB-093 IT:A

Micron Technology Inc.

IC RLDRAM 576MBIT 1.067GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 10ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TBGA
Supplier Device Package: 168-BGA

패키지: 168-TBGA

재고3,008

MT42L128M32D1LF-25 WT:A

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

패키지: 168-WFBGA

재고64,884

MT29F64G08AECABJ1-10Z:A TR

Micron Technology Inc.

IC FLASH 64GBIT 100MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

패키지: 132-VBGA

재고7,360

MT29F16G08ABACAWP-IT:C

Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고392,184

MT47H128M8CF-25E IT:H

Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고91,788

M25PX16-VZM6TP TR

Micron Technology Inc.

IC FLASH 16MBIT 75MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고3,824

MT46V16M16BG-6:F

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x14)

패키지: 60-FBGA

재고6,128

MT28F800B5SG-8 TET TR

Micron Technology Inc.

IC FLASH 8MBIT 80NS 44SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP

패키지: 44-SOIC (0.496", 12.60mm Width)

재고5,168

MT28F800B3WG-9 TET

Micron Technology Inc.

IC FLASH 8MBIT 90NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,320

MT43A4G80200NFH-S15:A

Micron Technology Inc.

HMC 32G NANA HBBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,440

MT46H128M16LFDD-48 WT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

패키지: 60-VFBGA

재고2,880

MT46V16M16P-5B IT:M

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고4,656

MT25QU512ABB1EW9-0SIT TR

Micron Technology Inc.

IC FLASH 512MBIT 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,760

M29F200FB5AN6E2

Micron Technology Inc.

IC FLASH 2MBIT 55NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8, 128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고3,200

MT25QU256ABA8E14-1SIT TR

Micron Technology Inc.

IC FLASH 256MBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고6,976

MT40A512M8RH-083E AAT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,480

MT53E512M32D2NP-046 WT:E TR

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA WT DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,160

MT53D4DCTW-DC

Micron Technology Inc.

LPDDR4 0 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,904

MT25QU128ABB1EW7-CAUT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPDFN (6x5)(MLP8)

패키지: 8-WDFN Exposed Pad

재고7,872

MTFC128GAPALNS-AAT TR

Micron Technology Inc.

IC FLASH 1T MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,768

MT53B384M32D2NK-062 WT ES:B TR

Micron Technology Inc.

IC DRAM 12G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,424

MT25QU256ABA8E14-1SIT

Micron Technology Inc.

IC FLASH 256M SPI 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고6,288

MT53D384M32D2DS-053 XT:E TR

Micron Technology Inc.

IC DRAM 12G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,128

MT29TZZZ5D6DKFRL-093 W.9A6

Micron Technology Inc.

IC FLASH MEM 6G LPDDR2 MLC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,200

MT53E256M16D1DS-046 WT:B TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,336