Micron Technology Inc. 제품

MT42L64M32D1TK-18 IT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.3 V
• Operating Temperature: -25°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

EDW2032BBBG-7A-F-R TR

Micron Technology Inc.

IC SGRAM 2GBIT 1.75GHZ 170FBGA

• Memory Type: Volatile
• Memory Format: RAM
• Technology: SGRAM - GDDR5
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 1.75GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.31 V ~ 1.65 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 170-TFBGA
• Supplier Device Package: 170-FBGA (12x14)

패키지: 170-TFBGA

MT29F64G08AEAAAC5:A TR

Micron Technology Inc.

IC FLASH 64GBIT 52VLGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 52-VELGA
• Supplier Device Package: 52-VLGA (18x14)

패키지: 52-VELGA

M25P64-VMF6PBA

Micron Technology Inc.

IC FLASH 64MBIT 75MHZ 16SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8)
• Memory Interface: SPI
• Clock Frequency: 75MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SO W

패키지: 16-SOIC (0.295", 7.50mm Width)

MT46V128M4P-5B:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

MT42L256M64D4EV-18 WT:A TR

Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 16Gb (256M x 64)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.3 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 253-TFBGA
• Supplier Device Package: 253-FBGA (11x11)

패키지: 253-TFBGA

MT45W8MW16BGX-701 IT

Micron Technology Inc.

IC PSRAM 128MBIT 70NS 54VFBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x10)

패키지: 54-VFBGA

MT47H128M8B7-37E:A

Micron Technology Inc.

IC SDRAM 1GBIT 266MHZ 92FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 267MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 92-VFBGA
• Supplier Device Package: 92-FBGA (11x19)

패키지: 92-VFBGA

MT48LC64M8A2TG-75 L:C

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

MT45W2MW16PAFA-85 WT

Micron Technology Inc.

IC PSRAM 32MBIT 85NS 48VFBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 32Mb (2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 85ns
• Access Time: 85ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

MT28F640J3FS-115 GMET TR

Micron Technology Inc.

IC FLASH 64MBIT 115NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 115ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-FBGA
• Supplier Device Package: 64-FBGA (10x13)

패키지: 64-FBGA

MT28F400B3WG-8 BET TR

Micron Technology Inc.

IC FLASH 4MBIT 80NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 80ns
• Access Time: 80ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

MT28F400B3WG-8 BET

Micron Technology Inc.

IC FLASH 4MBIT 80NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 80ns
• Access Time: 80ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

MT47H32M16CC-37E L:B

Micron Technology Inc.

IC SDRAM 512MBIT 266MHZ 84FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 267MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 500ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-FBGA (12x12.5)

패키지: 84-TFBGA

MT46V64M16P-75:A TR

Micron Technology Inc.

IC SDRAM 1GBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

MT29F16G16ADACAH4:C TR

Micron Technology Inc.

IC FLASH 16GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 16Gb (1G x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

EDBA164B2PR-1D-F-R TR

Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 16Gb (256M x 64)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 216-WFBGA
• Supplier Device Package: 216-FBGA (12x12)

패키지: 216-WFBGA

MT25QL02GCBA8E12-0SIT

Micron Technology Inc.

SPI FLASH NOR SLC 512MX4 TBGA QD

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 2Gb (256M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29C4G96MAZBBCJG-48 IT TR

Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 168-WFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 208MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 168-WFBGA
• Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

MT28EW01GABA1HPC-0AAT TR

Micron Technology Inc.

IC FLASH 1GBIT 105NS 64LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 1Gb (128M x 8, 64M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 105ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

MT28EW512ABA1LPC-0AAT

Micron Technology Inc.

IC FLASH 512M PARALLEL 64LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (64M x 8, 32M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 105ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

MT40A256M16GE-083E AUT:B TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (14x9)

패키지: 96-TFBGA

MT25QU128ABB1EW7-CSIT TR

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WPDFN (6x5)(MLP8)

패키지: 8-WDFN Exposed Pad

MT53E1G64D8NW-053 WT:E

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA WT 8DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29TZZZAD8DKKBT-107 W ES.9F8

Micron Technology Inc.

MLC EMMC/LPDDR3 544G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MTFC64GAPAKEA-WT ES

Micron Technology Inc.

IC FLASH 512G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53B1G64D8NW-062 WT:D

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53B256M32D1NP-053 WT:C TR

Micron Technology Inc.

IC DRAM 8G 1866MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 8Gb (256M x 32)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29F4G08ABAFAWP-ITES:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29F2G16ABBGAH4-AATES:G

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -