페이지 18 - Maxim Integrated 제품 - 메모리 | Heisener Electronics
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Maxim Integrated 제품 - 메모리

기록 607
페이지  18/21
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부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DS1258Y-70#
Maxim Integrated

IC NVSRAM 2MBIT 70NS 40EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 40-DIP Module (0.610", 15.495mm)
  • Supplier Device Package: 40-EDIP
패키지: 40-DIP Module (0.610", 15.495mm)
재고2,720
NVSRAM
NVSRAM (Non-Volatile SRAM)
2Mb (128K x 16)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
40-DIP Module (0.610", 15.495mm)
40-EDIP
DS1265AB-70+
Maxim Integrated

IC NVSRAM 8MBIT 70NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고5,664
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS1270Y-100#
Maxim Integrated

IC NVSRAM 16MBIT 100NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고3,008
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
hot DS1270W-150#
Maxim Integrated

IC NVSRAM 16MBIT 150NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고3,520
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS2431Q+U
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고6,304
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
DS28DG02E-3C+
Maxim Integrated

IC EEPROM 2KBIT 2MHZ 28TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 28-TSSOP-EP
패키지: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
재고3,776
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
-
-
2.2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.173", 4.40mm Width) Exposed Pad
28-TSSOP-EP
DS28DG02G-3C+
Maxim Integrated

IC EEPROM 2KBIT 2MHZ 36TQFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.2 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-TQFN (6x6)
패키지: 36-WFQFN Exposed Pad
재고7,872
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
-
-
2.2 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
36-WFQFN Exposed Pad
36-TQFN (6x6)
DS3050W-100#
Maxim Integrated

IC NVSRAM 4MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고4,448
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3045W-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고5,856
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3030W-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고4,896
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2070W-100#
Maxim Integrated

IC NVSRAM 16MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고2,112
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2065W-100#
Maxim Integrated

IC NVSRAM 8MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고5,536
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2050W-100#
Maxim Integrated

IC NVSRAM 4MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,808
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045Y-70#
Maxim Integrated

IC NVSRAM 1MBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고3,904
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045Y-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고2,560
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045W-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,632
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045L-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고6,240
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045AB-70#
Maxim Integrated

IC NVSRAM 1MBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고3,200
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045AB-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,776
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030Y-70#
Maxim Integrated

IC NVSRAM 256KBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고6,112
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030Y-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,360
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030W-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,952
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030L-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고4,240
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030AB-70#
Maxim Integrated

IC NVSRAM 256KBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,488
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030AB-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고2,896
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3070W-100#
Maxim Integrated

IC NVSRAM 16MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고6,176
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3065W-100#
Maxim Integrated

IC NVSRAM 8MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고5,344
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS25LV02R+T&R
Maxim Integrated

IC OTP 1KBIT 1WIRE SOT23-5

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Kb (1K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15µs
  • Voltage - Supply: 2.2 V ~ 5.5 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-23-5
패키지: SOT-23-5 Thin, TSOT-23-5
재고5,696
EPROM
EPROM - OTP
1Kb (1K x 1)
1-Wire?
-
-
15µs
2.2 V ~ 5.5 V
-30°C ~ 85°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-23-5
hot DS2506S+
Maxim Integrated

IC OTP 64KBIT 1WIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 64Kb (64K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.209", 5.30mm Width)
재고4,896
EPROM
EPROM - OTP
64Kb (64K x 1)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SO
DS2433+
Maxim Integrated

IC EEPROM 4KBIT 1WIRE TO92-3

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 Long Body
재고4,336
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92-3