페이지 122 - PMIC - 게이트 구동기 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRS2330DSPBF	Infineon Technologies	IC BRIDGE DVR 3PH 600V 28-SOIC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고4,576	3-Phase	6	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.2V	250mA, 500mA	Inverting	600V	80ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
IR21271S	Infineon Technologies	IC DRIVER 600V 200/420MA 8-SOIC Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 9 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고164,688	Single	1	IGBT, N-Channel MOSFET	9 V ~ 20 V	0.8V, 3V	250mA, 500mA	Non-Inverting	600V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MAX5057AASA	Maxim Integrated	IC MOSFET DRVR DUAL 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4 V ~ 15 V Logic Voltage - VIL, VIH: 0.8V, 2.1V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 32ns, 26ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고4,096	Independent	2	N-Channel MOSFET	4 V ~ 15 V	0.8V, 2.1V	4A, 4A	Inverting, Non-Inverting	-	32ns, 26ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
SIP41103DM-T1-E3	Vishay Siliconix	IC DRIVER MOSF N-CH DC/DC MLP33 Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: 0.5V, 4V Current - Peak Output (Source, Sink): 900mA, 1.1A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 32ns, 36ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? MLP33-10 Supplier Device Package: PowerPAK? MLP33-10	패키지: PowerPAK? MLP33-10	재고5,712	Synchronous	2	N-Channel MOSFET	4.5 V ~ 5.5 V	0.5V, 4V	900mA, 1.1A	Non-Inverting	50V	32ns, 36ns	-40°C ~ 125°C (TJ)	Surface Mount	PowerPAK? MLP33-10	PowerPAK? MLP33-10
VLA504-01	Powerex Inc.	IC IGBT GATE DVR ISO 3A Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT Voltage - Supply: 14 V ~ 15 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 3A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 300ns, 300ns Operating Temperature: -20°C ~ 60°C (TA) Mounting Type: Through Hole Package / Case: 14-SIP Module, 12 Leads Supplier Device Package: Module	패키지: 14-SIP Module, 12 Leads	재고4,336	Single	1	IGBT	14 V ~ 15 V	-	3A, 3A	Non-Inverting	-	300ns, 300ns	-20°C ~ 60°C (TA)	Through Hole	14-SIP Module, 12 Leads	Module
PX3511BDDG-RA	Intersil	IC DRVR SYNC BUCK HF 10-DFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3)	패키지: 10-VFDFN Exposed Pad	재고50,004	Synchronous	2	N-Channel MOSFET	10.8 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	0°C ~ 125°C (TJ)	Surface Mount	10-VFDFN Exposed Pad	10-DFN (3x3)
ISL6613ECBZ-TR5214	Intersil	IC MOSFET DRVR SYNC BUCK 8EPSOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고7,616	Synchronous	2	N-Channel MOSFET	10.8 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	0°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXK611P1	IXYS	IC DRIVER HALF BRIDGE GATE 8DIP Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,400	-	-	-	-	-	-	-	-	-	-	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXBD4410SI	IXYS	IC LOW SIDE DRIVER 16SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 1V, 3.65V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200V Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고6,848	Single	1	IGBT, N-Channel, P-Channel MOSFET	10 V ~ 20 V	1V, 3.65V	2A, 2A	Non-Inverting	1200V	15ns, 15ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
UC3708DWG4	Texas Instruments	IC DUAL NON-INV PWR DRVR 16-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 25ns Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고3,664	Independent	2	N-Channel, P-Channel MOSFET	5 V ~ 35 V	0.8V, 2V	3A, 3A	Non-Inverting	-	25ns, 25ns	0°C ~ 70°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
UC3705DG4	Texas Instruments	IC HS POWER DRIVER 8-SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5 V ~ 40 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 60ns, 60ns Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,256	Single	1	N-Channel MOSFET	5 V ~ 40 V	0.8V, 2.2V	1.5A, 1.5A	Inverting, Non-Inverting	-	60ns, 60ns	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC4431EPA	Microchip Technology	IC MOSFET DRIVER 30V 1.5A 8-DIP Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 33ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고175,704	Single	1	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	25ns, 33ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
TC4425COE713	Microchip Technology	IC MOSFET DVR 3A DUAL HS 16-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3A, 3A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 23ns, 25ns Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고4,752	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	3A, 3A	Inverting, Non-Inverting	-	23ns, 25ns	0°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
LM25101ASDX-1/NOPB	Texas Instruments	IC GATE DVR HI/LO SIDE 8WSON Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 9 V ~ 14 V Logic Voltage - VIL, VIH: 2.3V, - Current - Peak Output (Source, Sink): 3A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100V Rise / Fall Time (Typ): 430ns, 260ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (4x4)	패키지: 8-WDFN Exposed Pad	재고10,440	Independent	2	N-Channel MOSFET	9 V ~ 14 V	2.3V, -	3A, 3A	Non-Inverting	100V	430ns, 260ns	-40°C ~ 125°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-WSON (4x4)
TC1427EPA	Microchip Technology	IC MOSFET DVR 1.2A DUAL 8-DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 16 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 1.2A, 1.2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 35ns, 25ns Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고6,208	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 16 V	0.8V, 3V	1.2A, 1.2A	Non-Inverting	-	35ns, 25ns	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
DGD21814S14-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 14SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO	패키지: 14-SOIC (0.154", 3.90mm Width)	재고3,696	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	1.9A, 2.3A	Non-Inverting	600V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SO
TC4428VPA	Microchip Technology	IC MOSFET DVR 1.5A DUAL HS 8DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 19ns, 19ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고47,376	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.5A, 1.5A	Inverting, Non-Inverting	-	19ns, 19ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
UCC27423DRG4	Texas Instruments	IC MOSFET DRIVR DUAL HS 4A 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4 V ~ 15 V Logic Voltage - VIL, VIH: 1V, 2V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고152,208	Independent	2	N-Channel, P-Channel MOSFET	4 V ~ 15 V	1V, 2V	4A, 4A	Inverting	-	20ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRS2127SPBF	Infineon Technologies	IC DVR CURRENT SENSE 1CH 8SOIC Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고19,260	Single	1	IGBT, N-Channel MOSFET	12 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MAX17604AUA+	Maxim Integrated	IC MOSFET DRVR 4A DUAL 8UMAX Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4 V ~ 14 V Logic Voltage - VIL, VIH: 2V, 4.25V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 40ns, 25ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package: 8-uMax-EP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad	재고7,984	Independent	2	N-Channel MOSFET	4 V ~ 14 V	2V, 4.25V	4A, 4A	Non-Inverting	-	40ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad	8-uMax-EP
LM5060Q1MMX/NOPB	Texas Instruments	IC CTRL HIGH SIDE AUTO 10MSOP Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5.5 V ~ 65 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 24µA, 2.2mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-VSSOP	패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	재고84,000	Single	1	N-Channel MOSFET	5.5 V ~ 65 V	0.8V, 2V	24µA, 2.2mA	Non-Inverting	-	-	-40°C ~ 125°C	Surface Mount	10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	10-VSSOP
DGD2184S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,752	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	1.9A, 2.3A	Non-Inverting	600V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ISL6208CRZ	Renesas Electronics America	IC MOSFET DRVR SYNC BUCK 8-QFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: 0.5V, 2V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33V Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: -10°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Supplier Device Package: 8-QFN (3x3)	패키지: 8-VQFN Exposed Pad	재고5,056	Synchronous	2	N-Channel MOSFET	4.5 V ~ 5.5 V	0.5V, 2V	2A, 2A	Non-Inverting	33V	8ns, 8ns	-10°C ~ 125°C (TJ)	Surface Mount	8-VQFN Exposed Pad	8-QFN (3x3)
RT7028AGN	Richtek USA Inc.	IC HI-SIDE MOSFET SWITCH DIP8 Driven Configuration: High-Side or Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 300mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: 8-DIP (0.300", 7.62mm)	재고5,984	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	300mA, 600mA	Non-Inverting	600V	70ns, 35ns	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
TC4427EOA-VAO	Microchip Technology	1.5A DUAL MOSFET DRVR Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,864	-	-	-	-	-	-	-	-	-	-	-	-	-
ISL89163FRTBZ	Renesas Electronics America	MOSFET DRIVER 2CH 5.0V 6A 8TDFN Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 16 V Logic Voltage - VIL, VIH: 1.85V, 3.15V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 20ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-TDFN (3x3)	패키지: 8-WDFN Exposed Pad	재고4,128	Independent	2	N-Channel MOSFET	4.5 V ~ 16 V	1.85V, 3.15V	6A, 6A	Non-Inverting	-	20ns, 20ns	-40°C ~ 125°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-TDFN (3x3)
ISL6625ACRZ-TK	Renesas Electronics America	IC MOSFET DRVR SYNCH RECT 8DFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 5.5 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): -, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 31ns, 18ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN-EP (2x2)	패키지: 8-VFDFN Exposed Pad	재고2,928	Synchronous	2	N-Channel MOSFET	5.5 V ~ 13.2 V	-	-, 3A	Non-Inverting	36V	31ns, 18ns	0°C ~ 125°C (TJ)	Surface Mount	8-VFDFN Exposed Pad	8-DFN-EP (2x2)
MCP14A0301T-E/SN	Microchip Technology	3.0A SINGLE INV MOSFET DRIVER WI Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 13ns, 12ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고28,800	Single	1	IGBT	4.5V ~ 18V	0.8V, 2V	3A, 3A	Inverting, Non-Inverting	-	13ns, 12ns	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DRV8300UDIPWR	Texas Instruments	100-V MAX, SIMPLE THREE-PHASE GA Driven Configuration: High-Side and Low-Side Channel Type: 3-Phase Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 8.7V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 750mA, 1.5A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 125 V Rise / Fall Time (Typ): 24ns, 12ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	패키지: -	재고8,784	3-Phase	2	N-Channel MOSFET	8.7V ~ 20V	0.8V, 2V	750mA, 1.5A	Inverting, Non-Inverting	125 V	24ns, 12ns	-40°C ~ 125°C (TA)	Surface Mount	20-TSSOP (0.173", 4.40mm Width)	20-TSSOP
ISL6609ACBZ-TS2568	Intersil	AND GATE BASED MOSFET DRIVER, 4A Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-

IRS2330DSPBF

Infineon Technologies

IC BRIDGE DVR 3PH 600V 28-SOIC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고4,576

3-Phase

6

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.2V

250mA, 500mA

Inverting

600V

80ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

IR21271S

Infineon Technologies

IC DRIVER 600V 200/420MA 8-SOIC

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 9 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고164,688

Single

1

IGBT, N-Channel MOSFET

9 V ~ 20 V

0.8V, 3V

250mA, 500mA

Non-Inverting

600V

80ns, 40ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MAX5057AASA

Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4 V ~ 15 V
Logic Voltage - VIL, VIH: 0.8V, 2.1V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 32ns, 26ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고4,096

Independent

2

N-Channel MOSFET

4 V ~ 15 V

0.8V, 2.1V

4A, 4A

Inverting, Non-Inverting

-

32ns, 26ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

SIP41103DM-T1-E3

Vishay Siliconix

IC DRIVER MOSF N-CH DC/DC MLP33

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: 0.5V, 4V
Current - Peak Output (Source, Sink): 900mA, 1.1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 32ns, 36ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? MLP33-10
Supplier Device Package: PowerPAK? MLP33-10

패키지: PowerPAK? MLP33-10

재고5,712

Synchronous

2

N-Channel MOSFET

4.5 V ~ 5.5 V

0.5V, 4V

900mA, 1.1A

Non-Inverting

50V

32ns, 36ns

-40°C ~ 125°C (TJ)

Surface Mount

PowerPAK? MLP33-10

VLA504-01

Powerex Inc.

IC IGBT GATE DVR ISO 3A

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT
Voltage - Supply: 14 V ~ 15 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 3A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 300ns, 300ns
Operating Temperature: -20°C ~ 60°C (TA)
Mounting Type: Through Hole
Package / Case: 14-SIP Module, 12 Leads
Supplier Device Package: Module

패키지: 14-SIP Module, 12 Leads

재고4,336

Single

1

IGBT

14 V ~ 15 V

-

3A, 3A

Non-Inverting

-

300ns, 300ns

-20°C ~ 60°C (TA)

Through Hole

14-SIP Module, 12 Leads

Module

PX3511BDDG-RA

Intersil

IC DRVR SYNC BUCK HF 10-DFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)

패키지: 10-VFDFN Exposed Pad

재고50,004

Synchronous

2

N-Channel MOSFET

10.8 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

0°C ~ 125°C (TJ)

Surface Mount

10-VFDFN Exposed Pad

10-DFN (3x3)

ISL6613ECBZ-TR5214

Intersil

IC MOSFET DRVR SYNC BUCK 8EPSOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고7,616

Synchronous

2

N-Channel MOSFET

10.8 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

0°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

IXK611P1

IXYS

IC DRIVER HALF BRIDGE GATE 8DIP

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,400

-

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IXBD4410SI

IXYS

IC LOW SIDE DRIVER 16SOIC

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200V
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고6,848

Single

1

IGBT, N-Channel, P-Channel MOSFET

10 V ~ 20 V

1V, 3.65V

2A, 2A

Non-Inverting

1200V

15ns, 15ns

-40°C ~ 150°C (TJ)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

UC3708DWG4

Texas Instruments

IC DUAL NON-INV PWR DRVR 16-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 25ns
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고3,664

Independent

2

N-Channel, P-Channel MOSFET

5 V ~ 35 V

0.8V, 2V

3A, 3A

Non-Inverting

-

25ns, 25ns

0°C ~ 70°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

UC3705DG4

Texas Instruments

IC HS POWER DRIVER 8-SOIC

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5 V ~ 40 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 60ns, 60ns
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,256

Single

1

N-Channel MOSFET

5 V ~ 40 V

0.8V, 2.2V

1.5A, 1.5A

Inverting, Non-Inverting

-

60ns, 60ns

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC4431EPA

Microchip Technology

IC MOSFET DRIVER 30V 1.5A 8-DIP

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 33ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고175,704

Single

1

N-Channel, P-Channel MOSFET

4.5 V ~ 30 V

0.8V, 2.4V

1.5A, 1.5A

Inverting

-

25ns, 33ns

-40°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

TC4425COE713

Microchip Technology

IC MOSFET DVR 3A DUAL HS 16-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 23ns, 25ns
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고4,752

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

3A, 3A

Inverting, Non-Inverting

-

23ns, 25ns

0°C ~ 150°C (TJ)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

LM25101ASDX-1/NOPB

Texas Instruments

IC GATE DVR HI/LO SIDE 8WSON

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9 V ~ 14 V
Logic Voltage - VIL, VIH: 2.3V, -
Current - Peak Output (Source, Sink): 3A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100V
Rise / Fall Time (Typ): 430ns, 260ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (4x4)

패키지: 8-WDFN Exposed Pad

재고10,440

Independent

2

N-Channel MOSFET

9 V ~ 14 V

2.3V, -

3A, 3A

Non-Inverting

100V

430ns, 260ns

-40°C ~ 125°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-WSON (4x4)

TC1427EPA

Microchip Technology

IC MOSFET DVR 1.2A DUAL 8-DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 16 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 35ns, 25ns
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고6,208

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 16 V

0.8V, 3V

1.2A, 1.2A

Non-Inverting

-

35ns, 25ns

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

DGD21814S14-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO

패키지: 14-SOIC (0.154", 3.90mm Width)

재고3,696

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

1.9A, 2.3A

Non-Inverting

600V

40ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SO

TC4428VPA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 19ns, 19ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고47,376

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.5A, 1.5A

Inverting, Non-Inverting

-

19ns, 19ns

-40°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

UCC27423DRG4

Texas Instruments

IC MOSFET DRIVR DUAL HS 4A 8SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4 V ~ 15 V
Logic Voltage - VIL, VIH: 1V, 2V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 15ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고152,208

Independent

2

N-Channel, P-Channel MOSFET

4 V ~ 15 V

1V, 2V

4A, 4A

Inverting

-

20ns, 15ns

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRS2127SPBF

Infineon Technologies

IC DVR CURRENT SENSE 1CH 8SOIC

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고19,260

Single

1

IGBT, N-Channel MOSFET

12 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

80ns, 40ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MAX17604AUA+

Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4 V ~ 14 V
Logic Voltage - VIL, VIH: 2V, 4.25V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 40ns, 25ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-uMax-EP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

재고7,984

Independent

2

N-Channel MOSFET

4 V ~ 14 V

2V, 4.25V

4A, 4A

Non-Inverting

-

40ns, 25ns

-40°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

8-uMax-EP

LM5060Q1MMX/NOPB

Texas Instruments

IC CTRL HIGH SIDE AUTO 10MSOP

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5.5 V ~ 65 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 24µA, 2.2mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-VSSOP

패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

재고84,000

Single

1

N-Channel MOSFET

5.5 V ~ 65 V

0.8V, 2V

24µA, 2.2mA

Non-Inverting

-

-40°C ~ 125°C

Surface Mount

10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

10-VSSOP

DGD2184S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,752

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

1.9A, 2.3A

Non-Inverting

600V

40ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ISL6208CRZ

Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-QFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: 0.5V, 2V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -10°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: 8-QFN (3x3)

패키지: 8-VQFN Exposed Pad

재고5,056

Synchronous

2

N-Channel MOSFET

4.5 V ~ 5.5 V

0.5V, 2V

2A, 2A

Non-Inverting

33V

8ns, 8ns

-10°C ~ 125°C (TJ)

Surface Mount

8-VQFN Exposed Pad

8-QFN (3x3)

RT7028AGN

Richtek USA Inc.

IC HI-SIDE MOSFET SWITCH DIP8

Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 300mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: 8-DIP (0.300", 7.62mm)

재고5,984

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

300mA, 600mA

Non-Inverting

600V

70ns, 35ns

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

TC4427EOA-VAO

Microchip Technology

1.5A DUAL MOSFET DRVR

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,864

-

ISL89163FRTBZ

Renesas Electronics America

MOSFET DRIVER 2CH 5.0V 6A 8TDFN

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 16 V
Logic Voltage - VIL, VIH: 1.85V, 3.15V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 20ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-TDFN (3x3)

패키지: 8-WDFN Exposed Pad

재고4,128

Independent

2

N-Channel MOSFET

4.5 V ~ 16 V

1.85V, 3.15V

6A, 6A

Non-Inverting

-

20ns, 20ns

-40°C ~ 125°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-TDFN (3x3)

ISL6625ACRZ-TK

Renesas Electronics America

IC MOSFET DRVR SYNCH RECT 8DFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 5.5 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 31ns, 18ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (2x2)

패키지: 8-VFDFN Exposed Pad

재고2,928

Synchronous

2

N-Channel MOSFET

5.5 V ~ 13.2 V

-

-, 3A

Non-Inverting

36V

31ns, 18ns

0°C ~ 125°C (TJ)

Surface Mount

8-VFDFN Exposed Pad

8-DFN-EP (2x2)

MCP14A0301T-E/SN

Microchip Technology

3.0A SINGLE INV MOSFET DRIVER WI

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 13ns, 12ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고28,800

Single

1

IGBT

4.5V ~ 18V

0.8V, 2V

3A, 3A

Inverting, Non-Inverting

-

13ns, 12ns

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DRV8300UDIPWR

Texas Instruments

100-V MAX, SIMPLE THREE-PHASE GA

Driven Configuration: High-Side and Low-Side
Channel Type: 3-Phase
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8.7V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 750mA, 1.5A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 125 V
Rise / Fall Time (Typ): 24ns, 12ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

패키지: -

재고8,784

3-Phase

2

N-Channel MOSFET

8.7V ~ 20V

0.8V, 2V

750mA, 1.5A

Inverting, Non-Inverting

125 V

24ns, 12ns

-40°C ~ 125°C (TA)

Surface Mount

20-TSSOP (0.173", 4.40mm Width)

20-TSSOP

ISL6609ACBZ-TS2568

Intersil

AND GATE BASED MOSFET DRIVER, 4A

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-