페이지 922 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S40410081B1B1W000	Cypress Semiconductor Corp	IC FLASH 8GBIT 200MHZ 153FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-WFBGA (11.5x13)	패키지: 153-VFBGA	재고4,864	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	200MHz	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-WFBGA (11.5x13)
MTFC64GJTDN-IT	Micron Technology Inc.	IC FLASH 512GBIT 169LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고6,880	FLASH	FLASH - NAND	512Gb (64G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
NAND01GR3B2CZA6E	Micron Technology Inc.	IC FLASH 1GBIT 30NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-TFBGA Supplier Device Package: 63-VFBGA (9.5x12)	패키지: 63-TFBGA	재고12,996	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	25ns	25ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-TFBGA	63-VFBGA (9.5x12)
M29DW256G70ZA6F TR	Micron Technology Inc.	IC FLASH 256MBIT 70NS 64TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x13)	패키지: 64-TBGA	재고3,184	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-TBGA (10x13)
STK11C68-SF25I	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 25NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.342", 8.69mm Width)	재고5,136	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
IDT71V016SA15Y	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고14,028	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
RC48F4400P0VB0E4	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-EasyBGA (8x10)	패키지: 64-LBGA	재고5,536	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TC)	Surface Mount	64-LBGA	64-EasyBGA (8x10)
MT29F32G08QAAWP:A TR	Micron Technology Inc.	IC FLASH 32GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고7,104	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS42S32800B-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고5,264	DRAM	SDRAM	256Mb (8M x 32)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
CYD36S36V18-200BBXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 200MHZ 256FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.3ns Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-FBGA (17x17)	패키지: 256-LBGA	재고4,048	SRAM	SRAM - Dual Port, Synchronous	36Mb (1M x 36)	Parallel	200MHz	-	3.3ns	1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-FBGA (17x17)
AT29LV040A-15JI	Microchip Technology	IC FLASH 4MBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고16,380	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	20ms	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT28HC256F-70SI	Microchip Technology	IC EEPROM 256KBIT 70NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고6,320	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
AT29C020-12PC	Microchip Technology	IC FLASH 2MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고5,712	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
AT27C400-90JC	Microchip Technology	IC OTP 4MBIT 90NS 44PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.59x16.59)	패키지: 44-LCC (J-Lead)	재고7,600	EPROM	EPROM - OTP	4Mb (512K x 8, 256K x 16)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	44-LCC (J-Lead)	44-PLCC (16.59x16.59)
IS61VPS204836B-200TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 72MBIT 200MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고6,096	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	200MHz	-	3.1ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
71V67803S150BQI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고6,672	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
7134SA20J8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 20NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고4,144	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
S26KS512SDPBHA023	Cypress Semiconductor Corp	FLASH MEMORY NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 96ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,128	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	166MHz	-	96ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
IS43DR16640B-3DBI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	패키지: 84-TFBGA	재고4,832	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
CY7C10212CV33-12BAXET	Cypress Semiconductor Corp	IC SRAM 1MBIT 12NS 48FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (7x7)	패키지: 48-TFBGA	재고5,664	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-FBGA (7x7)
AK6440AF	AKM Semiconductor Inc.	IC EEPROM 4KBIT 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: SPI Clock Frequency: 1MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,296	EEPROM	EEPROM	4Kb (256 x 16)	SPI	1MHz	-	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
24LCS21A/SN	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고23,016	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	10ms	900ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CAT34C02YI-GT5A	ON Semiconductor	IC EEPROM 2KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,936	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AS4C128M16D2A-25BIN	Alliance Memory, Inc.	IC SDRAM 2GBIT 400MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (10.5x13.5)	패키지: 84-TFBGA	재고6,252	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	400MHz	15ns	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	84-TFBGA	84-FBGA (10.5x13.5)
CY7C1513KV18-250BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고5,488	SRAM	SRAM - Synchronous, QDR II	72Mb (4M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
S70GL02GT12FHIV10	Cypress Semiconductor Corp	IC FLASH 2G PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8, 128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	패키지: 64-LBGA	재고4,912	FLASH	FLASH - NOR	2Gb (256M x 8, 128M x 16)	Parallel	-	-	120ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
S29GL256P11FFIV23	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고6,208	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
NV25M01DTUTG	ON Semiconductor	IC EEPROM SPI SER CMOS 8TSSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,280	-	-	-	-	-	-	-	-	-	-	-	-
S30ML256P30TFI000	Cypress Semiconductor Corp	IC MEMORY FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,992	-	-	-	-	-	-	-	-	-	-	-	-
MTA8ATF1G64HZ-2G6E1	Micron Technology Inc.	IC DRAM 64G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 64Gb (1G x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,600	DRAM	SDRAM - DDR4	64Gb (1G x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-

S40410081B1B1W000

Cypress Semiconductor Corp

IC FLASH 8GBIT 200MHZ 153FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

패키지: 153-VFBGA

재고4,864

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

200MHz

-

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-WFBGA (11.5x13)

MTFC64GJTDN-IT

Micron Technology Inc.

IC FLASH 512GBIT 169LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,880

FLASH

FLASH - NAND

512Gb (64G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

-

NAND01GR3B2CZA6E

Micron Technology Inc.

IC FLASH 1GBIT 30NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-TFBGA
Supplier Device Package: 63-VFBGA (9.5x12)

패키지: 63-TFBGA

재고12,996

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

25ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-TFBGA

63-VFBGA (9.5x12)

M29DW256G70ZA6F TR

Micron Technology Inc.

IC FLASH 256MBIT 70NS 64TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x13)

패키지: 64-TBGA

재고3,184

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-TBGA (10x13)

STK11C68-SF25I

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 25NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.342", 8.69mm Width)

재고5,136

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

IDT71V016SA15Y

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고14,028

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

RC48F4400P0VB0E4

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-EasyBGA (8x10)

패키지: 64-LBGA

재고5,536

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TC)

Surface Mount

64-LBGA

64-EasyBGA (8x10)

MT29F32G08QAAWP:A TR

Micron Technology Inc.

IC FLASH 32GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고7,104

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS42S32800B-7TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고5,264

DRAM

SDRAM

256Mb (8M x 32)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

CYD36S36V18-200BBXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 200MHZ 256FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.3ns
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-FBGA (17x17)

패키지: 256-LBGA

재고4,048

SRAM

SRAM - Dual Port, Synchronous

36Mb (1M x 36)

Parallel

200MHz

-

3.3ns

1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-FBGA (17x17)

AT29LV040A-15JI

Microchip Technology

IC FLASH 4MBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고16,380

FLASH

4Mb (512K x 8)

Parallel

-

20ms

150ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT28HC256F-70SI

Microchip Technology

IC EEPROM 256KBIT 70NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고6,320

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

AT29C020-12PC

Microchip Technology

IC FLASH 2MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고5,712

FLASH

2Mb (256K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

AT27C400-90JC

Microchip Technology

IC OTP 4MBIT 90NS 44PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)

패키지: 44-LCC (J-Lead)

재고7,600

EPROM

EPROM - OTP

4Mb (512K x 8, 256K x 16)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

44-LCC (J-Lead)

44-PLCC (16.59x16.59)

IS61VPS204836B-200TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 200MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고6,096

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

200MHz

-

3.1ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

71V67803S150BQI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고6,672

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

7134SA20J8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고4,144

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

S26KS512SDPBHA023

Cypress Semiconductor Corp

FLASH MEMORY NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,128

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

166MHz

-

96ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

-

IS43DR16640B-3DBI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

패키지: 84-TFBGA

재고4,832

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

CY7C10212CV33-12BAXET

Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 48FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (7x7)

패키지: 48-TFBGA

재고5,664

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-FBGA (7x7)

AK6440AF

AKM Semiconductor Inc.

IC EEPROM 4KBIT 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: SPI
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,296

EEPROM

4Kb (256 x 16)

SPI

1MHz

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

24LCS21A/SN

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고23,016

EEPROM

1Kb (128 x 8)

I2C

400kHz

10ms

900ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CAT34C02YI-GT5A

ON Semiconductor

IC EEPROM 2KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,936

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AS4C128M16D2A-25BIN

Alliance Memory, Inc.

IC SDRAM 2GBIT 400MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (10.5x13.5)

패키지: 84-TFBGA

재고6,252

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

400MHz

15ns

-

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

84-TFBGA

84-FBGA (10.5x13.5)

CY7C1513KV18-250BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고5,488

SRAM

SRAM - Synchronous, QDR II

72Mb (4M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

S70GL02GT12FHIV10

Cypress Semiconductor Corp

IC FLASH 2G PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

재고4,912

FLASH

FLASH - NOR

2Gb (256M x 8, 128M x 16)

Parallel

-

120ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

S29GL256P11FFIV23

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고6,208

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

NV25M01DTUTG

ON Semiconductor

IC EEPROM SPI SER CMOS 8TSSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,280

-

S30ML256P30TFI000

Cypress Semiconductor Corp

IC MEMORY FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,992

-

MTA8ATF1G64HZ-2G6E1

Micron Technology Inc.

IC DRAM 64G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,600

DRAM

SDRAM - DDR4

64Gb (1G x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-