페이지 610 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SST25VF010A-33-4I-ZAE	Microchip Technology	IC FLASH 1MBIT 33MHZ 8CSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 33MHz Write Cycle Time - Word, Page: 20µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA, CSPBGA Supplier Device Package: 8-CSP	패키지: 8-UFBGA, CSPBGA	재고120,780	FLASH	FLASH	1Mb (128K x 8)	SPI	33MHz	20µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFBGA, CSPBGA	8-CSP
IDT71V2546XS150PF8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,848	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	150MHz	-	3.8ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS42VS16100C1-10TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 100MHZ 50TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 7ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	패키지: 50-TSOP (0.400", 10.16mm Width)	재고7,088	DRAM	SDRAM	16Mb (1M x 16)	Parallel	100MHz	-	7ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
AT49F1024A-45VC	Microchip Technology	IC FLASH 1MBIT 45NS 40VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 40-VSOP	패키지: 40-TFSOP (0.488", 12.40mm Width)	재고18,828	FLASH	FLASH	1Mb (64K x 16)	Parallel	-	50µs	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	40-TFSOP (0.488", 12.40mm Width)	40-VSOP
AT24C08-10PI-1.8	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,880	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
7006L17PF	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 17NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (16K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 17ns Access Time: 17ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고5,248	SRAM	SRAM - Dual Port, Asynchronous	128Kb (16K x 8)	Parallel	-	17ns	17ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
MT53D384M64D4NZ-053 WT ES:C TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.8GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,496	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
S72XS256RE0AHBH10	Cypress Semiconductor Corp	IC FLASH NOR 133MCP Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, DRAM Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM Memory Interface: Parallel Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,288	FLASH, RAM	FLASH, DRAM	256Mbit Flash, 2565Mbit DDR DRAM	Parallel	108MHz	-	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	-	-	-
W25M02GVZEIG TR	Winbond Electronics	IC FLASH 2GBIT 104MHZ WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 700µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: 8-WDFN Exposed Pad	재고6,192	FLASH	FLASH - NAND (SLC)	2Gb (256M x 8)	SPI	104MHz	700µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
S25FL064LABBHV033	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,728	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
SST39LF800A-55-4C-B3KE-T	Microchip Technology	IC FLASH 8MBIT 55NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	패키지: 48-TFBGA	재고7,392	FLASH	FLASH	8Mb (512K x 16)	Parallel	-	20µs	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
S25FL132K0XBHI020	Cypress Semiconductor Corp	IC FLASH 32MBIT 108MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	패키지: 24-TBGA	재고4,928	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
25LC080BT-E/ST	Microchip Technology	IC EEPROM 8KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,728	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
24AA014-I/P	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,816	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
PF48F3000P0ZTQ0A	Micron Technology Inc.	IC FLASH 128MBIT 85NS 88SCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 88-TFBGA, CSPBGA Supplier Device Package: 88-SCSP (8x10)	패키지: 88-TFBGA, CSPBGA	재고17,034	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	52MHz	85ns	85ns	1.7 V ~ 2 V	-40°C ~ 85°C (TC)	Surface Mount	88-TFBGA, CSPBGA	88-SCSP (8x10)
AS7C316098A-10BIN	Alliance Memory, Inc.	IC SRAM 16MBIT 10NS 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-LFBGA	재고18,180	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-TFBGA (6x8)
FM28V102A-TG	Cypress Semiconductor Corp	IC FRAM 1MBIT 60NS 44TSOPII Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고6,336	FRAM	FRAM (Ferroelectric RAM)	1Mb (64K x 16)	Parallel	-	90ns	90ns	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CY62167EV30LL-45ZXA	Cypress Semiconductor Corp	IC SRAM 16MBIT 45NS 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고27,984	SRAM	SRAM - Asynchronous	16Mb (2M x 8, 1M x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
FM25V02A-GTR	Cypress Semiconductor Corp	IC FRAM 256KBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고92,892	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	SPI	40MHz	-	-	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS46DR16640C-3DBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	패키지: 84-TFBGA	재고3,712	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
MTFC8GAMALNA-AIT ES TR	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,944	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-
MTFC128GAPALNS-IT	Micron Technology Inc.	MODULE EMMC 128GB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,928	-	-	-	-	-	-	-	-	-	-	-	-
IS26KS512S-DPBLE00	Infineon Technologies	INFINEON Memory Type: Non-Volatile Memory Format: FLASH Technology: HyperFlash Memory Size: 512Mbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	패키지: -	Request a Quote	FLASH	HyperFlash	512Mbit	HyperBus	166 MHz	-	96 ns	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)
CAT93C76YGI	Catalyst Semiconductor Inc.	IC EEPROM 8KBIT MICROWIRE 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: Microwire Clock Frequency: 3 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	EEPROM	EEPROM	8Kbit	Microwire	3 MHz	-	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C197-35VCT	Cypress Semiconductor Corp	IC SRAM 256KBIT PARALLEL 24SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 24-SOJ	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	35ns	35 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	24-BSOJ (0.300", 7.62mm Width)	24-SOJ
CY7C1223F-133AC	Cypress Semiconductor Corp	IC SRAM 2MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	2Mbit	Parallel	133 MHz	-	4 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
W97AH6NBVA2E-TR	Winbond Electronics	IC DRAM 1GBIT HSUL 12 134VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4B Memory Size: 1Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4B	1Gbit	HSUL_12	400 MHz	15ns	-	1.14V ~ 1.3V, 1.7V ~ 1.95V	-25°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
CY7C1350G-166AXC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 4.5Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 3.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	4.5Mbit	Parallel	166 MHz	-	3.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT25SF081B-MAHB-T	Renesas Electronics Corporation	IC FLASH 8MBIT SPI/QUAD 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: -	재고455,181	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	108 MHz	50µs, 2.4ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
SM662PBD-BDST	Silicon Motion, Inc.	IC FLASH 1TBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC	-	-	-	-	-40°C ~ 105°C	Surface Mount	100-LBGA	100-BGA (14x18)

SST25VF010A-33-4I-ZAE

Microchip Technology

IC FLASH 1MBIT 33MHZ 8CSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 20µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, CSPBGA
Supplier Device Package: 8-CSP

패키지: 8-UFBGA, CSPBGA

재고120,780

FLASH

1Mb (128K x 8)

SPI

33MHz

20µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFBGA, CSPBGA

8-CSP

IDT71V2546XS150PF8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,848

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

150MHz

-

3.8ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS42VS16100C1-10TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 100MHZ 50TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 7ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

패키지: 50-TSOP (0.400", 10.16mm Width)

재고7,088

DRAM

SDRAM

16Mb (1M x 16)

Parallel

100MHz

-

7ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

AT49F1024A-45VC

Microchip Technology

IC FLASH 1MBIT 45NS 40VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 40-VSOP

패키지: 40-TFSOP (0.488", 12.40mm Width)

재고18,828

FLASH

1Mb (64K x 16)

Parallel

-

50µs

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

40-TFSOP (0.488", 12.40mm Width)

40-VSOP

AT24C08-10PI-1.8

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,880

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

7006L17PF

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 17NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 17ns
Access Time: 17ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고5,248

SRAM

SRAM - Dual Port, Asynchronous

128Kb (16K x 8)

Parallel

-

17ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

MT53D384M64D4NZ-053 WT ES:C TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.8GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,496

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

S72XS256RE0AHBH10

Cypress Semiconductor Corp

IC FLASH NOR 133MCP

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH, DRAM
Memory Size: 256Mbit Flash, 2565Mbit DDR DRAM
Memory Interface: Parallel
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,288

FLASH, RAM

FLASH, DRAM

256Mbit Flash, 2565Mbit DDR DRAM

Parallel

108MHz

-

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

-

W25M02GVZEIG TR

Winbond Electronics

IC FLASH 2GBIT 104MHZ WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 700µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: 8-WDFN Exposed Pad

재고6,192

FLASH

FLASH - NAND (SLC)

2Gb (256M x 8)

SPI

104MHz

700µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

S25FL064LABBHV033

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,728

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

SST39LF800A-55-4C-B3KE-T

Microchip Technology

IC FLASH 8MBIT 55NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

패키지: 48-TFBGA

재고7,392

FLASH

8Mb (512K x 16)

Parallel

-

20µs

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

S25FL132K0XBHI020

Cypress Semiconductor Corp

IC FLASH 32MBIT 108MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

패키지: 24-TBGA

재고4,928

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

25LC080BT-E/ST

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,728

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

24AA014-I/P

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,816

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

PF48F3000P0ZTQ0A

Micron Technology Inc.

IC FLASH 128MBIT 85NS 88SCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 88-TFBGA, CSPBGA
Supplier Device Package: 88-SCSP (8x10)

패키지: 88-TFBGA, CSPBGA

재고17,034

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

52MHz

85ns

1.7 V ~ 2 V

-40°C ~ 85°C (TC)

Surface Mount

88-TFBGA, CSPBGA

88-SCSP (8x10)

AS7C316098A-10BIN

Alliance Memory, Inc.

IC SRAM 16MBIT 10NS 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-LFBGA

재고18,180

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-TFBGA (6x8)

FM28V102A-TG

Cypress Semiconductor Corp

IC FRAM 1MBIT 60NS 44TSOPII

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고6,336

FRAM

FRAM (Ferroelectric RAM)

1Mb (64K x 16)

Parallel

-

90ns

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CY62167EV30LL-45ZXA

Cypress Semiconductor Corp

IC SRAM 16MBIT 45NS 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고27,984

SRAM

SRAM - Asynchronous

16Mb (2M x 8, 1M x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

FM25V02A-GTR

Cypress Semiconductor Corp

IC FRAM 256KBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고92,892

FRAM

FRAM (Ferroelectric RAM)

256Kb (32K x 8)

SPI

40MHz

-

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS46DR16640C-3DBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

패키지: 84-TFBGA

재고3,712

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 105°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

MTFC8GAMALNA-AIT ES TR

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,944

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

-40°C ~ 85°C (TA)

-

MTFC128GAPALNS-IT

Micron Technology Inc.

MODULE EMMC 128GB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,928

-

IS26KS512S-DPBLE00

Infineon Technologies

INFINEON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: HyperFlash
Memory Size: 512Mbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

패키지: -

Request a Quote

FLASH

HyperFlash

512Mbit

HyperBus

166 MHz

-

96 ns

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)

CAT93C76YGI

Catalyst Semiconductor Inc.

IC EEPROM 8KBIT MICROWIRE 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: Microwire
Clock Frequency: 3 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

Request a Quote

EEPROM

8Kbit

Microwire

3 MHz

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C197-35VCT

Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 24SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 24-SOJ

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

35ns

35 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

24-BSOJ (0.300", 7.62mm Width)

24-SOJ

CY7C1223F-133AC

Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

2Mbit

Parallel

133 MHz

-

4 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

W97AH6NBVA2E-TR

Winbond Electronics

IC DRAM 1GBIT HSUL 12 134VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4B
Memory Size: 1Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4B

1Gbit

HSUL_12

400 MHz

15ns

-

1.14V ~ 1.3V, 1.7V ~ 1.95V

-25°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

CY7C1350G-166AXC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4.5Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

4.5Mbit

Parallel

166 MHz

-

3.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT25SF081B-MAHB-T

Renesas Electronics Corporation

IC FLASH 8MBIT SPI/QUAD 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: -

재고455,181

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

108 MHz

50µs, 2.4ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

SM662PBD-BDST

Silicon Motion, Inc.

IC FLASH 1TBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

eMMC

-

-40°C ~ 105°C

Surface Mount

100-LBGA

100-BGA (14x18)