페이지 49 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S25FL032P0XMFV013M
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,832
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
104MHz
5µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
EDFA164A2PF-GD-F-R TR
Micron Technology Inc.

IC SDRAM 16GBIT 800MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,736
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
Parallel
800MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-
IS43LR16160F-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x10)
패키지: 60-TFBGA
재고4,336
DRAM
SDRAM - Mobile DDR
256Mb (16M x 16)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x10)
CY7C131E-55JXC
Cypress Semiconductor Corp

IC SRAM 8KBIT 55NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
패키지: 52-LCC (J-Lead)
재고6,688
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
MT41J256M4JP-125:G
Micron Technology Inc.

IC SDRAM 1GBIT 800MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (256M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (8x11.5)
패키지: 78-TFBGA
재고5,008
DRAM
SDRAM - DDR3
1Gb (256M x 4)
Parallel
800MHz
-
-
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x11.5)
hot AT25DF081A-SH-B
Microchip Technology

IC FLASH 8MBIT 100MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (256 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 7µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고128,940
FLASH
FLASH
8Mb (256 Bytes x 4096 pages)
SPI
100MHz
7µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
SST39SF010A-45-4I-NHE-T
Microchip Technology

IC FLASH 1MBIT 45NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고3,296
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
20µs
45ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot IDT71V124SA20PHI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.400", 10.16mm Width)
  • Supplier Device Package: 32-TSOP II
패키지: 32-SOIC (0.400", 10.16mm Width)
재고5,616
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.400", 10.16mm Width)
32-TSOP II
hot CY7C028V-20AC
Cypress Semiconductor Corp

IC SRAM 1MBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고13,272
SRAM
SRAM - Dual Port, Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot AT29C040A-90JC
Microchip Technology

IC FLASH 4MBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고15,936
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
10ms
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT49LV001-12JI
Microchip Technology

IC FLASH 1MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 120ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고5,376
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
120ns
3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT29LV256-20JC
Microchip Technology

IC FLASH 256KBIT 200NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ms
  • Access Time: 200ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고65,808
FLASH
FLASH
256Kb (32K x 8)
Parallel
-
20ms
200ns
3 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT27BV1024-12JC
Microchip Technology

IC OTP 1MBIT 120NS 44PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: 44-PLCC (16.59x16.59)
패키지: 44-LCC (J-Lead)
재고6,304
EPROM
EPROM - OTP
1Mb (64K x 16)
Parallel
-
-
120ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
44-LCC (J-Lead)
44-PLCC (16.59x16.59)
IS61VPS51236B-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
패키지: 100-LQFP
재고5,376
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
200MHz
-
3ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
S29WS512R0SBHW000
Cypress Semiconductor Corp

IC FLASH NOR 84FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,000
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
104MHz
60ns
80ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
-
-
-
IS46LR32160B-6BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고4,016
DRAM
SDRAM - Mobile DDR
512Mb (16M x 32)
Parallel
166MHz
12ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
hot CY7C1360C-166AJXCT
Cypress Semiconductor Corp

IC SRAM 9MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고15,288
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
M58LR256KB70ZQ5W TR
Micron Technology Inc.

IC FLASH 256MBIT 70NS 88TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 88-TFBGA
  • Supplier Device Package: 88-TFBGA (8x10)
패키지: 88-TFBGA
재고5,952
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
66MHz
70ns
70ns
1.7 V ~ 2 V
-30°C ~ 85°C (TA)
Surface Mount
88-TFBGA
88-TFBGA (8x10)
hot MT48LC8M16A2P-7E:L
Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고10,440
DRAM
SDRAM
128Mb (8M x 16)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
6116LA25SOGI
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 24SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
패키지: 24-SOIC (0.295", 7.50mm Width)
재고2,320
SRAM
SRAM - Asynchronous
16Kb (2K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
N25S830HAT22IT
ON Semiconductor

IC SRAM 256KBIT 20MHZ 8TSSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,592
SRAM
SRAM
256Kb (32K x 8)
SPI
20MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IS61C64AL-10TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 64KBIT 10NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고6,608
SRAM
SRAM - Asynchronous
64Kb (8K x 8)
Parallel
-
10ns
10ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
W9864G6KH-6I TR
Winbond Electronics

IC SDRAM 64MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고3,776
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
-
5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
24AA01HT-I/MS
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고7,824
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
70V28L20PFI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고6,464
SRAM
SRAM - Dual Port, Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot W25Q32JVSSIQ
Winbond Electronics

IC FLASH 32MBIT 133MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고960,000
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
133MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
S29GL01GS11FHSS20
Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고5,520
FLASH
FLASH - NOR
1Gb (64M x 16)
Parallel
-
60ns
110ns
2.7 V ~ 3.6 V
0°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
W25Q256FVEJQ
Winbond Electronics

IC FLASH MEMORY 256MB

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,544
-
-
-
-
-
-
-
-
-
-
-
-
MTFC4GLMDQ-AIT Z TR
Micron Technology Inc.

IC FLASH 32G MMC LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,024
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
MX25U8035FZUI
Macronix

IC FLASH 8M 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 100µs, 4ms
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
패키지: 8-UFDFN Exposed Pad
재고5,184
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI - Quad I/O
108MHz
100µs, 4ms
-
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)