페이지 407 - 메모리 | 집적 회로(IC) | Heisener Electronics
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메모리

기록 46,059
페이지  407/1,536
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT25TL256HAA1ESF-0AAT TR
Micron Technology Inc.

IC SERIAL NOR SLC SOIC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,048
-
-
-
-
-
-
-
-
-
-
-
-
MT42L32M16D1U67MWC2
Micron Technology Inc.

LPDDR2

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,016
-
-
-
-
-
-
-
-
-
-
-
-
IS42RM16160E-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고2,384
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
M29F200FB55M3F2 TR
Micron Technology Inc.

IC FLASH 2MBIT 55NS 44SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mb (256K x 8, 128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-SOIC (0.496", 12.60mm Width)
  • Supplier Device Package: 44-SO
패키지: 44-SOIC (0.496", 12.60mm Width)
재고5,632
FLASH
FLASH - NOR
2Mb (256K x 8, 128K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
44-SOIC (0.496", 12.60mm Width)
44-SO
R1EX24016ATAS0I#S0
Renesas Electronics America

IC EEPROM 16KBIT 400KHZ TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고2,384
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
CAT28F001GI-12B
ON Semiconductor

IC FLASH 1MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120ns
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
패키지: 32-LCC (J-Lead)
재고5,904
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
120ns
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
MT46H32M32LFCM-6 L IT:A TR
Micron Technology Inc.

IC SDRAM 1GBIT 167MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 1Gb (32M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (10x13)
패키지: 90-VFBGA
재고4,432
DRAM
SDRAM - Mobile LPDDR
1Gb (32M x 32)
Parallel
166MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (10x13)
CY7C1270V18-375BZC
Cypress Semiconductor Corp

IC SRAM 36MBIT 375MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 375MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
패키지: 165-LBGA
재고4,112
SRAM
SRAM - Synchronous, DDR II
36Mb (1M x 36)
Parallel
375MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
IS61LPS25618A-200B2LI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BBGA
  • Supplier Device Package: 119-PBGA (14x22)
패키지: 119-BBGA
재고5,776
SRAM
SRAM - Synchronous
4.5Mb (256K x 18)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
119-BBGA
119-PBGA (14x22)
CY7C199C-15VC
Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
패키지: 28-BSOJ (0.300", 7.62mm Width)
재고3,456
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
hot AT45DB041B-SC-2.5
Microchip Technology

IC FLASH 4MBIT 15MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (264 Bytes x 2048 pages)
  • Memory Interface: SPI
  • Clock Frequency: 15MHz
  • Write Cycle Time - Word, Page: 14ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고47,880
FLASH
FLASH
4Mb (264 Bytes x 2048 pages)
SPI
15MHz
14ms
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
AT29BV020-12JC
Microchip Technology

IC FLASH 2MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ms
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고2,000
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
20ms
120ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT49F040-90PC
Microchip Technology

IC FLASH 4MBIT 90NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
패키지: 32-DIP (0.600", 15.24mm)
재고84,540
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
50µs
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
hot AT27C520-90SC
Microchip Technology

IC OTP 512KBIT 90NS 20SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: 20-SOIC (0.295", 7.50mm Width)
재고6,272
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
70V9269S7PRFI
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 7.5NS 128TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
패키지: 128-LQFP
재고5,040
SRAM
SRAM - Dual Port, Synchronous
256Kb (16K x 16)
Parallel
-
-
7.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
128-LQFP
128-TQFP (14x20)
MT29F384G08EBHBBJ4-3RES:B TR
Micron Technology Inc.

IC FLASH 384GBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 384Gb (48G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,800
FLASH
FLASH - NAND
384Gb (48G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
71V547S100PFG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 10NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고4,480
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
-
-
10ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MX29LV800CBXHI-90G
Macronix

IC FLASH 8MBIT 90NS 48WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFBGA, CSPBGA
  • Supplier Device Package: 48-WFBGA, CSP (4x6)
패키지: 48-WFBGA, CSPBGA
재고5,808
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-WFBGA, CSPBGA
48-WFBGA, CSP (4x6)
RM25C64C-LMAI-T
Adesto Technologies

IC EEPROM 64KBIT 10MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64kb (32B Page Size)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 100µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: 8-UFDFN Exposed Pad
재고6,336
EEPROM
EEPROM
64kb (32B Page Size)
SPI
10MHz
100µs, 5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
hot CY14B101I-SFXI
Cypress Semiconductor Corp

IC NVSRAM 1MBIT 3.4MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 3.4MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고7,392
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
I2C
3.4MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot AT24CM01-SHD-T
Microchip Technology

IC EEPROM 1MBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고120,816
EEPROM
EEPROM
1Mb (128K x 8)
I2C
1MHz
5ms
550ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
7130LA20JG
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 20NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
패키지: 52-LCC (J-Lead)
재고7,920
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
hot AT28HC256-12JU
Microchip Technology

IC EEPROM 256KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고55,464
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot 24LC1025T-I/SM
Microchip Technology

IC EEPROM 1MBIT 400KHZ 8SOIJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIJ
패키지: 8-SOIC (0.209", 5.30mm Width)
재고24,000
EEPROM
EEPROM
1Mb (128K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIJ
hot M95512-WMN6TP
STMicroelectronics

IC EEPROM 512KBIT 10MHZ 8SO

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 16MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고77,988
EEPROM
EEPROM
512Kb (64K x 8)
SPI
16MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AT27BV010-90JU-T
Microchip Technology

IC EPROM 1M PARALLEL 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고19,932
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
90ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
IS43R86400E-6BLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (13x8)
패키지: 60-TFBGA
재고4,352
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
166MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (13x8)
S99ML04G10043
Cypress Semiconductor Corp

IC GATE NAND

  • Memory Type: -
  • Memory Format: -
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패키지: -
재고2,800
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MT53D8DANZ-DC TR
Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

  • Memory Type: -
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재고7,824
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MT53D4DCTW-DC TR
Micron Technology Inc.

LPDDR4 0 512MX64 FBGA QDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,192
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