페이지 360 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS29GL256S-10DHB010	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,328	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AT25DL161-SSHN-T	Microchip Technology	IC FLASH 16MBIT 100MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (256 Bytes x 8192 pages) Memory Interface: SPI Clock Frequency: 100MHz Write Cycle Time - Word, Page: 8µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,064	FLASH	FLASH	16Mb (256 Bytes x 8192 pages)	SPI	100MHz	8µs, 3ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SST39VF400A-70-4I-M1QE	Microchip Technology	IC FLASH 4MBIT 70NS 48WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-WFBGA Supplier Device Package: 48-WFBGA (6x4)	패키지: 48-WFBGA	재고4,544	FLASH	FLASH	4Mb (256K x 16)	Parallel	-	20µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-WFBGA	48-WFBGA (6x4)
STK14C88-3WF35	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 35NS 32DIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	패키지: 32-DIP (0.600", 15.24mm)	재고4,000	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
PC28F512P30BF0	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	패키지: 64-TBGA	재고4,640	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
IDT71V3559SA85BQGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고7,168	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
M93C56-WBN6	STMicroelectronics	IC EEPROM 2KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고5,616	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MT48LC8M32LFB5-8 TR	Micron Technology Inc.	IC SDRAM 256MBIT 125MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고4,352	DRAM	SDRAM - Mobile LPSDR	256Mb (8M x 32)	Parallel	125MHz	15ns	7ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
AT49F001AN-55JI	Microchip Technology	IC FLASH 1MBIT 55NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고39,744	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT49F002NT-70PI	Microchip Technology	IC FLASH 2MBIT 70NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고3,488	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
AT29C256-20JI	Microchip Technology	IC FLASH 256KBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고20,376	FLASH	FLASH	256Kb (32K x 8)	Parallel	-	10ms	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT25040-10PI	Microchip Technology	IC EEPROM 4KBIT 2.1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고6,688	EEPROM	EEPROM	4Kb (512 x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MTFC16GAKAECN-5M AIT	Micron Technology Inc.	IC FLASH 128GBIT 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,712	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	-	-	-
AS7C316096C-10BINTR	Alliance Memory, Inc.	IC SRAM 16MBIT 10NS 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-LFBGA	재고5,600	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	10ns	10ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-TFBGA (6x8)
71321LA20TFG8	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	패키지: 64-LQFP	재고7,600	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
MT25QL01GBBB8ESF-0AAT TR	Micron Technology Inc.	IC FLASH 1GBIT 133MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	패키지: 16-SOIC (0.295", 7.50mm Width)	재고4,768	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
EDB4432BBBJ-1DAIT-F-D	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-WFBGA Supplier Device Package: 134-FBGA (10x11.5)	패키지: 134-WFBGA	재고2,064	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-WFBGA	134-FBGA (10x11.5)
IS43TR16256A-125KBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고12,132	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42VM16800H-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고5,280	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	6ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
PZ28F064M29EWHA	Micron Technology Inc.	IC FLASH 64MBIT 60NS 48BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-BGA (6x8)	패키지: 48-VFBGA	재고3,872	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-BGA (6x8)
M29W320EB70N6E	Micron Technology Inc.	IC FLASH 32MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고101,184	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
93AA66A-I/MS	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고7,408	EEPROM	EEPROM	4Kb (512 x 8)	SPI	2MHz	6ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
AS4C32M32MD2-25BCN	Alliance Memory, Inc.	SDRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-FBGA (10x11.5)	패키지: 134-VFBGA	재고7,296	DRAM	SDRAM - Mobile DDR2	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-FBGA (10x11.5)
S29GL128P11TFIV13	Cypress Semiconductor Corp	IC FLASH 128MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128M (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고14,226	FLASH	FLASH - NOR	128M (16M x 8)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
S29XS064RABBHI010	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 44FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 108MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-VFBGA Supplier Device Package: 44-FBGA (7.5x5)	패키지: 44-VFBGA	재고5,856	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	108MHz	60ns	80ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	44-VFBGA	44-FBGA (7.5x5)
S29VS128RABBHW013	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 44FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 108MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-VFBGA Supplier Device Package: 44-FBGA (7.5x5)	패키지: 44-VFBGA	재고5,264	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	108MHz	60ns	80ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	44-VFBGA	44-FBGA (7.5x5)
MT52L256M32D1PU-107 WT:B	Micron Technology Inc.	IC DRAM 8G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,992	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT53D384M16D1NY-046 XT ES:D	Micron Technology Inc.	LPDDR4 6G 384MX16 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,080	-	-	-	-	-	-	-	-	-	-	-	-
CG8152AA	Cypress Semiconductor Corp	IC SRAM ASYNC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,920	-	-	-	-	-	-	-	-	-	-	-	-
A2C01507400 A	Cypress Semiconductor Corp	IC MEMORY NOR 16SOIC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,936	-	-	-	-	-	-	-	-	-	-	-	-

IS29GL256S-10DHB010

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,328

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AT25DL161-SSHN-T

Microchip Technology

IC FLASH 16MBIT 100MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (256 Bytes x 8192 pages)
Memory Interface: SPI
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 8µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,064

FLASH

16Mb (256 Bytes x 8192 pages)

SPI

100MHz

8µs, 3ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SST39VF400A-70-4I-M1QE

Microchip Technology

IC FLASH 4MBIT 70NS 48WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-WFBGA
Supplier Device Package: 48-WFBGA (6x4)

패키지: 48-WFBGA

재고4,544

FLASH

4Mb (256K x 16)

Parallel

-

20µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-WFBGA

48-WFBGA (6x4)

STK14C88-3WF35

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 35NS 32DIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

패키지: 32-DIP (0.600", 15.24mm)

재고4,000

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

PC28F512P30BF0

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

패키지: 64-TBGA

재고4,640

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

IDT71V3559SA85BQGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고7,168

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

M93C56-WBN6

STMicroelectronics

IC EEPROM 2KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고5,616

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

MT48LC8M32LFB5-8 TR

Micron Technology Inc.

IC SDRAM 256MBIT 125MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고4,352

DRAM

SDRAM - Mobile LPSDR

256Mb (8M x 32)

Parallel

125MHz

15ns

7ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

AT49F001AN-55JI

Microchip Technology

IC FLASH 1MBIT 55NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고39,744

FLASH

1Mb (128K x 8)

Parallel

-

50µs

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT49F002NT-70PI

Microchip Technology

IC FLASH 2MBIT 70NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고3,488

FLASH

2Mb (256K x 8)

Parallel

-

50µs

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

AT29C256-20JI

Microchip Technology

IC FLASH 256KBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고20,376

FLASH

256Kb (32K x 8)

Parallel

-

10ms

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT25040-10PI

Microchip Technology

IC EEPROM 4KBIT 2.1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고6,688

EEPROM

4Kb (512 x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

MTFC16GAKAECN-5M AIT

Micron Technology Inc.

IC FLASH 128GBIT 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,712

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

-

AS7C316096C-10BINTR

Alliance Memory, Inc.

IC SRAM 16MBIT 10NS 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-LFBGA

재고5,600

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

10ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-TFBGA (6x8)

71321LA20TFG8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

패키지: 64-LQFP

재고7,600

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

MT25QL01GBBB8ESF-0AAT TR

Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

패키지: 16-SOIC (0.295", 7.50mm Width)

재고4,768

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

EDB4432BBBJ-1DAIT-F-D

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-WFBGA
Supplier Device Package: 134-FBGA (10x11.5)

패키지: 134-WFBGA

재고2,064

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-WFBGA

134-FBGA (10x11.5)

IS43TR16256A-125KBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고12,132

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42VM16800H-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고5,280

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

6ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

PZ28F064M29EWHA

Micron Technology Inc.

IC FLASH 64MBIT 60NS 48BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-BGA (6x8)

패키지: 48-VFBGA

재고3,872

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-BGA (6x8)

M29W320EB70N6E

Micron Technology Inc.

IC FLASH 32MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고101,184

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

93AA66A-I/MS

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고7,408

EEPROM

4Kb (512 x 8)

SPI

2MHz

6ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

AS4C32M32MD2-25BCN

Alliance Memory, Inc.

SDRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-FBGA (10x11.5)

패키지: 134-VFBGA

재고7,296

DRAM

SDRAM - Mobile DDR2

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-FBGA (10x11.5)

S29GL128P11TFIV13

Cypress Semiconductor Corp

IC FLASH 128MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128M (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고14,226

FLASH

FLASH - NOR

128M (16M x 8)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

S29XS064RABBHI010

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 44FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-VFBGA
Supplier Device Package: 44-FBGA (7.5x5)

패키지: 44-VFBGA

재고5,856

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

108MHz

60ns

80ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

44-VFBGA

44-FBGA (7.5x5)

S29VS128RABBHW013

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 44FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-VFBGA
Supplier Device Package: 44-FBGA (7.5x5)

패키지: 44-VFBGA

재고5,264

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

108MHz

60ns

80ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

44-VFBGA

44-FBGA (7.5x5)

MT52L256M32D1PU-107 WT:B

Micron Technology Inc.

IC DRAM 8G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,992

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT53D384M16D1NY-046 XT ES:D

Micron Technology Inc.

LPDDR4 6G 384MX16 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,080

-

CG8152AA

Cypress Semiconductor Corp

IC SRAM ASYNC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,920

-

A2C01507400 A

Cypress Semiconductor Corp

IC MEMORY NOR 16SOIC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,936

-