페이지 164 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY62148ESL-55ZAXAT	Cypress Semiconductor Corp	IC SRAM 4MBIT 55NS 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.2 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP	패키지: 32-TFSOP (0.465", 11.80mm Width)	재고3,504	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	55ns	55ns	2.2 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-sTSOP
CY7C1329S-133AXC	Cypress Semiconductor Corp	IC SRAM 2MBIT 133MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mb (64K x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,064	SRAM	SRAM - Synchronous	2Mb (64K x 32)	Parallel	133MHz	-	4ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT25160AY6-10YH-1.8	Microchip Technology	IC EEPROM 16KBIT 20MHZ 8MINIMAP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-Mini Map (2x3)	패키지: 8-UFDFN Exposed Pad	재고5,904	EEPROM	EEPROM	16Kb (2K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-Mini Map (2x3)
M29W640GSL70ZF6F TR	Micron Technology Inc.	IC FLASH 64MBIT 70NS 64TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x13)	패키지: 64-TBGA	재고5,136	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-TBGA (10x13)
IDT71P74804S250BQG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 250MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고5,760	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	250MHz	-	8.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IDT71P72604S167BQI8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 167MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고3,904	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	167MHz	-	8.4ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
MT48LC16M8A2P-75:G	Micron Technology Inc.	IC SDRAM 128MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고18,108	DRAM	SDRAM	128Mb (16M x 8)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT46V32M16FN-75 L:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 750ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	패키지: 60-TFBGA	재고6,640	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	133MHz	15ns	750ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
MT28F640J3FS-115 MET	Micron Technology Inc.	IC FLASH 64MBIT 115NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 115ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-FBGA Supplier Device Package: 64-FBGA (10x13)	패키지: 64-FBGA	재고4,544	FLASH	FLASH	64Mb (8M x 8, 4M x 16)	Parallel	-	-	115ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-FBGA	64-FBGA (10x13)
MT46V64M8BN-5B:F TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	패키지: 60-TFBGA	재고7,696	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
AT49LD3200B-10TI	Microchip Technology	IC FLASH 32MBIT 100MHZ 86TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (1M x 32, 2M x 16) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 170ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고7,952	FLASH	FLASH	32Mb (1M x 32, 2M x 16)	Parallel	100MHz	-	170ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
7005L20PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고3,472	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
71V65803S133BGGI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고4,880	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS42S32160F-75EBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고6,576	DRAM	SDRAM	512Mb (16M x 32)	Parallel	133MHz	-	6ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
7143LA35PF8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 35NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,288	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS42S16320F-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TWBGA (13x8)	패키지: 54-TFBGA	재고4,784	DRAM	SDRAM	512Mb (32M x 16)	Parallel	167MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TWBGA (13x8)
IS43LR32160B-6BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고12,372	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	166MHz	12ns	5.5ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42SM32800K-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고7,200	DRAM	SDRAM - Mobile	256Mb (8M x 32)	Parallel	133MHz	-	6ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
AS4C16M32MD1-5BCNTR	Alliance Memory, Inc.	IC SDRAM 512MBIT 200MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-FBGA (8x13)	패키지: 90-VFBGA	재고7,232	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	200MHz	15ns	5ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TJ)	Surface Mount	90-VFBGA	90-FBGA (8x13)
S25FL129P0XNFI010	Cypress Semiconductor Corp	IC FLASH 128MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (5x6)	패키지: 8-UFDFN Exposed Pad	재고2,208	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	5µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (5x6)
25AA080C-I/MS	Microchip Technology	IC EEPROM 8KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고12,768	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S25FL128P0XMFI011	Cypress Semiconductor Corp	IC FLASH 128MBIT 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고15,048	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT25QL128ABA8E12-1SIT TR	Micron Technology Inc.	IC FLASH 128MBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고7,264	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
BR25G640NUX-3TR	Rohm Semiconductor	IC EEPROM 64KBIT 20MHZ 8VSON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	패키지: 8-UFDFN Exposed Pad	재고6,432	EEPROM	EEPROM	64Kb (8K x 8)	SPI	20MHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
MR20H40CDF	Everspin Technologies Inc.	IC MRAM 4MBIT 50MHZ 8DFN Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-EP, Small Flag (5x6)	패키지: 8-VDFN Exposed Pad	재고24,996	RAM	MRAM (Magnetoresistive RAM)	4Mb (512K x 8)	SPI	50MHz	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP, Small Flag (5x6)
CY14E256LA-SZ45XQ	Cypress Semiconductor Corp	IC NVSRAM 256K PARALLEL 32SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.295", 7.50mm Width) Supplier Device Package: 32-SOIC	패키지: 32-SOIC (0.295", 7.50mm Width)	재고4,160	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 105°C (TA)	Surface Mount	32-SOIC (0.295", 7.50mm Width)	32-SOIC
S29GL512S11FAIV13	Cypress Semiconductor Corp	IC FLASH 512M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-Fortified BGA (13x11)	패키지: 64-LBGA	재고5,696	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	60ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-Fortified BGA (13x11)
S27KL0641DABHA033	Cypress Semiconductor Corp	IC 64 MB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,704	-	-	-	-	-	-	-	-	-	-	-	-
W631GU8MB-15	Winbond Electronics	IC SDRAM 1GBIT 667MHZ 78BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,688	-	-	-	-	-	-	-	-	-	-	-	-
S29WS128N0LBAW013	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,872	-	-	-	-	-	-	-	-	-	-	-	-

CY62148ESL-55ZAXAT

Cypress Semiconductor Corp

IC SRAM 4MBIT 55NS 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.2 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP

패키지: 32-TFSOP (0.465", 11.80mm Width)

재고3,504

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

55ns

2.2 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-sTSOP

CY7C1329S-133AXC

Cypress Semiconductor Corp

IC SRAM 2MBIT 133MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mb (64K x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,064

SRAM

SRAM - Synchronous

2Mb (64K x 32)

Parallel

133MHz

-

4ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT25160AY6-10YH-1.8

Microchip Technology

IC EEPROM 16KBIT 20MHZ 8MINIMAP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-Mini Map (2x3)

패키지: 8-UFDFN Exposed Pad

재고5,904

EEPROM

16Kb (2K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-Mini Map (2x3)

M29W640GSL70ZF6F TR

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x13)

패키지: 64-TBGA

재고5,136

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-TBGA (10x13)

IDT71P74804S250BQG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 250MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고5,760

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

250MHz

-

8.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IDT71P72604S167BQI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고3,904

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

167MHz

-

8.4ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

MT48LC16M8A2P-75:G

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고18,108

DRAM

SDRAM

128Mb (16M x 8)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT46V32M16FN-75 L:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 750ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

패키지: 60-TFBGA

재고6,640

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

133MHz

15ns

750ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

MT28F640J3FS-115 MET

Micron Technology Inc.

IC FLASH 64MBIT 115NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 115ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-FBGA
Supplier Device Package: 64-FBGA (10x13)

패키지: 64-FBGA

재고4,544

FLASH

64Mb (8M x 8, 4M x 16)

Parallel

-

115ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-FBGA

64-FBGA (10x13)

MT46V64M8BN-5B:F TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

패키지: 60-TFBGA

재고7,696

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

AT49LD3200B-10TI

Microchip Technology

IC FLASH 32MBIT 100MHZ 86TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (1M x 32, 2M x 16)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 170ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고7,952

FLASH

32Mb (1M x 32, 2M x 16)

Parallel

100MHz

-

170ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

7005L20PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고3,472

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

71V65803S133BGGI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고4,880

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS42S32160F-75EBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고6,576

DRAM

SDRAM

512Mb (16M x 32)

Parallel

133MHz

-

6ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

7143LA35PF8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 35NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,288

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS42S16320F-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TWBGA (13x8)

패키지: 54-TFBGA

재고4,784

DRAM

SDRAM

512Mb (32M x 16)

Parallel

167MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TWBGA (13x8)

IS43LR32160B-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고12,372

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

166MHz

12ns

5.5ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42SM32800K-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고7,200

DRAM

SDRAM - Mobile

256Mb (8M x 32)

Parallel

133MHz

-

6ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

AS4C16M32MD1-5BCNTR

Alliance Memory, Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-FBGA (8x13)

패키지: 90-VFBGA

재고7,232

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

200MHz

15ns

5ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TJ)

Surface Mount

90-VFBGA

90-FBGA (8x13)

S25FL129P0XNFI010

Cypress Semiconductor Corp

IC FLASH 128MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (5x6)

패키지: 8-UFDFN Exposed Pad

재고2,208

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

5µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (5x6)

25AA080C-I/MS

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고12,768

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S25FL128P0XMFI011

Cypress Semiconductor Corp

IC FLASH 128MBIT 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고15,048

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT25QL128ABA8E12-1SIT TR

Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고7,264

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

BR25G640NUX-3TR

Rohm Semiconductor

IC EEPROM 64KBIT 20MHZ 8VSON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

패키지: 8-UFDFN Exposed Pad

재고6,432

EEPROM

64Kb (8K x 8)

SPI

20MHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

MR20H40CDF

Everspin Technologies Inc.

IC MRAM 4MBIT 50MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP, Small Flag (5x6)

패키지: 8-VDFN Exposed Pad

재고24,996

RAM

MRAM (Magnetoresistive RAM)

4Mb (512K x 8)

SPI

50MHz

-

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN-EP, Small Flag (5x6)

CY14E256LA-SZ45XQ

Cypress Semiconductor Corp

IC NVSRAM 256K PARALLEL 32SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC

패키지: 32-SOIC (0.295", 7.50mm Width)

재고4,160

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 105°C (TA)

Surface Mount

32-SOIC (0.295", 7.50mm Width)

32-SOIC

S29GL512S11FAIV13

Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)

패키지: 64-LBGA

재고5,696

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

60ns

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-Fortified BGA (13x11)

S27KL0641DABHA033

Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,704

-

W631GU8MB-15

Winbond Electronics

IC SDRAM 1GBIT 667MHZ 78BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,688

-

S29WS128N0LBAW013

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,872

-