페이지 1413 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S29WS512R0SBHW200E	Cypress Semiconductor Corp	IC FLASH NOR 84FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 104MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,072	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	104MHz	60ns	80ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	-	-	-
MT29F128G08EBEBBWP:B TR	Micron Technology Inc.	IC FLASH 128GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,648	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT46H4M32LFB5-6 IT:K	Micron Technology Inc.	IC SDRAM 128MBIT 167MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고7,952	DRAM	SDRAM - Mobile LPDDR	128Mb (4M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
M95M01-RMW6TG	STMicroelectronics	IC EEPROM 1MBIT 5MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 16MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.209", 5.30mm Width)	재고6,928	EEPROM	EEPROM	1Mb (128K x 8)	SPI	16MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO
IDT71V3578S150PFI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고4,080	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT48H16M16LFBF-75:G TR	Micron Technology Inc.	IC SDRAM 256MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x9)	패키지: 54-VFBGA	재고6,272	DRAM	SDRAM - Mobile LPSDR	256Mb (16M x 16)	Parallel	133MHz	15ns	5.4ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x9)
IS42S32400B-7TI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고4,192	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
AT29C020-70TU-T	Microchip Technology	IC FLASH 2MBIT 70NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고2,816	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	10ms	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
AT24C64AW-10SU-1.8	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고21,372	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
MT46V64M4FG-6:G TR	Micron Technology Inc.	IC SDRAM 256MBIT 167MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (64M x 4) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x14)	패키지: 60-FBGA	재고5,232	DRAM	SDRAM - DDR	256Mb (64M x 4)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-FBGA	60-FBGA (8x14)
AT45DB011B-CC	Microchip Technology	IC FLASH 1MBIT 20MHZ 9CBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (264 Bytes x 512 pages) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 9-TBGA, CSPBGA Supplier Device Package: 9-CBGA (5x5)	패키지: 9-TBGA, CSPBGA	재고6,064	FLASH	FLASH	1Mb (264 Bytes x 512 pages)	SPI	20MHz	15ms	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	9-TBGA, CSPBGA	9-CBGA (5x5)
70V3569S4DR	IDT, Integrated Device Technology Inc	IC SRAM 576KBIT 4.2NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 576Kb (16K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	패키지: 208-BFQFP	재고4,096	SRAM	SRAM - Dual Port, Synchronous	576Kb (16K x 36)	Parallel	-	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
CY7C1061G18-15BV1XIT	Cypress Semiconductor Corp	IC SRAM 16MBIT 15NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고6,432	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	15ns	15ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
71V65703S85BGG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고5,568	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71V3557S85BG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고5,968	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
SST38VF6402BT-70I/CD	Microchip Technology	IC FLASH 64MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고2,768	FLASH	FLASH	64Mb (4M x 16)	Parallel	-	10µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
S29GL064S80DHV020	Cypress Semiconductor Corp	IC FLASH 64MBIT 80NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-Fortified BGA (9x9)	패키지: 64-LBGA	재고4,688	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	60ns	80ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-Fortified BGA (9x9)
M25P128-VME6TGB TR	Micron Technology Inc.	IC FLASH 128MBIT 54MHZ 8VFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 54MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFPN (MLP8) (8x6)	패키지: 8-VDFN Exposed Pad	재고7,184	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	54MHz	15ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VDFPN (MLP8) (8x6)
DS28E11P+T	Maxim Integrated	1-W 256B EEPROM W/SHA-256 TSOC T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,160	-	-	-	-	-	-	-	-	-	-	-	-
24AA02E64-I/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,840	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT27LV520-90XU	Microchip Technology	IC OTP 512KBIT 90NS 20TSSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고11,376	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	20-TSSOP (0.173", 4.40mm Width)	20-TSSOP
BR24G32FVJ-3GTE2	Rohm Semiconductor	IC EEPROM 32KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-TSSOP-BJ	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고3,136	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-TSSOP-BJ
BR24T02FJ-WGE2	Rohm Semiconductor	IC EEPROM 2KBIT 400KHZ SOP8-J Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	패키지: 8-SOIC (0.154", 3.90mm Width)	재고26,256	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
CY62187EV30LL-55BAXI	Cypress Semiconductor Corp	IC SRAM 64MBIT 55NS 48FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.2 V ~ 3.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-FBGA (8x9.5)	패키지: 48-LFBGA	재고10,500	SRAM	SRAM - Asynchronous	64Mb (4M x 16)	Parallel	-	55ns	55ns	2.2 V ~ 3.7 V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-FBGA (8x9.5)
IS42S16320F-7TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고19,512	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
24AA04-I/W16K	Microchip Technology	IC EEPROM 4K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,864	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
S29GL128P10TAI020	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고5,920	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	100ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
AT24C01D-MAHM-E	Microchip Technology	IC EEPROM 1K I2C 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 4.5µs Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고5,568	EEPROM	EEPROM	1Kb (128 x 8)	I²C	1MHz	5ms	4.5µs	1.7 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
70V25S45J	IDT, Integrated Device Technology Inc	IC SRAM 128K PARALLEL 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	패키지: 84-LCC (J-Lead)	재고5,808	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	45ns	45ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
MT53D4DFSB-DC TR	Micron Technology Inc.	IC SDRAM LPDDR4 32GBIT 512MX64 F Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,120	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-

S29WS512R0SBHW200E

Cypress Semiconductor Corp

IC FLASH NOR 84FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,072

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

104MHz

60ns

80ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

-

MT29F128G08EBEBBWP:B TR

Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,648

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT46H4M32LFB5-6 IT:K

Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고7,952

DRAM

SDRAM - Mobile LPDDR

128Mb (4M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

M95M01-RMW6TG

STMicroelectronics

IC EEPROM 1MBIT 5MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.209", 5.30mm Width)

재고6,928

EEPROM

1Mb (128K x 8)

SPI

16MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO

IDT71V3578S150PFI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고4,080

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT48H16M16LFBF-75:G TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x9)

패키지: 54-VFBGA

재고6,272

DRAM

SDRAM - Mobile LPSDR

256Mb (16M x 16)

Parallel

133MHz

15ns

5.4ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x9)

IS42S32400B-7TI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고4,192

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

AT29C020-70TU-T

Microchip Technology

IC FLASH 2MBIT 70NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고2,816

FLASH

2Mb (256K x 8)

Parallel

-

10ms

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

AT24C64AW-10SU-1.8

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고21,372

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

MT46V64M4FG-6:G TR

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (64M x 4)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x14)

패키지: 60-FBGA

재고5,232

DRAM

SDRAM - DDR

256Mb (64M x 4)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-FBGA

60-FBGA (8x14)

AT45DB011B-CC

Microchip Technology

IC FLASH 1MBIT 20MHZ 9CBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (264 Bytes x 512 pages)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 9-TBGA, CSPBGA
Supplier Device Package: 9-CBGA (5x5)

패키지: 9-TBGA, CSPBGA

재고6,064

FLASH

1Mb (264 Bytes x 512 pages)

SPI

20MHz

15ms

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

9-TBGA, CSPBGA

9-CBGA (5x5)

70V3569S4DR

IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 4.2NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (16K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

패키지: 208-BFQFP

재고4,096

SRAM

SRAM - Dual Port, Synchronous

576Kb (16K x 36)

Parallel

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

CY7C1061G18-15BV1XIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 15NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고6,432

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

15ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

71V65703S85BGG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고5,568

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71V3557S85BG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고5,968

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

SST38VF6402BT-70I/CD

Microchip Technology

IC FLASH 64MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고2,768

FLASH

64Mb (4M x 16)

Parallel

-

10µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

S29GL064S80DHV020

Cypress Semiconductor Corp

IC FLASH 64MBIT 80NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (9x9)

패키지: 64-LBGA

재고4,688

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

60ns

80ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-Fortified BGA (9x9)

M25P128-VME6TGB TR

Micron Technology Inc.

IC FLASH 128MBIT 54MHZ 8VFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 54MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)

패키지: 8-VDFN Exposed Pad

재고7,184

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

54MHz

15ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VDFPN (MLP8) (8x6)

DS28E11P+T

Maxim Integrated

1-W 256B EEPROM W/SHA-256 TSOC T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,160

-

24AA02E64-I/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,840

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT27LV520-90XU

Microchip Technology

IC OTP 512KBIT 90NS 20TSSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고11,376

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

20-TSSOP (0.173", 4.40mm Width)

20-TSSOP

BR24G32FVJ-3GTE2

Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고3,136

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-TSSOP-BJ

BR24T02FJ-WGE2

Rohm Semiconductor

IC EEPROM 2KBIT 400KHZ SOP8-J

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

재고26,256

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

CY62187EV30LL-55BAXI

Cypress Semiconductor Corp

IC SRAM 64MBIT 55NS 48FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.2 V ~ 3.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (8x9.5)

패키지: 48-LFBGA

재고10,500

SRAM

SRAM - Asynchronous

64Mb (4M x 16)

Parallel

-

55ns

2.2 V ~ 3.7 V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-FBGA (8x9.5)

IS42S16320F-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고19,512

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

24AA04-I/W16K

Microchip Technology

IC EEPROM 4K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,864

EEPROM

4Kb (256 x 8 x 2)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

S29GL128P10TAI020

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고5,920

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

AT24C01D-MAHM-E

Microchip Technology

IC EEPROM 1K I2C 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 4.5µs
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고5,568

EEPROM

1Kb (128 x 8)

I²C

1MHz

5ms

4.5µs

1.7 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

70V25S45J

IDT, Integrated Device Technology Inc

IC SRAM 128K PARALLEL 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

패키지: 84-LCC (J-Lead)

재고5,808

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

45ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

MT53D4DFSB-DC TR

Micron Technology Inc.

IC SDRAM LPDDR4 32GBIT 512MX64 F

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,120

DRAM

SDRAM - Mobile LPDDR4

-