페이지 1055 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CAT24C01BWA	ON Semiconductor	IC MEM EEPROM 1KB 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 1µs Voltage - Supply: 1.8 V ~ 6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,832	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	10ms	1µs	1.8 V ~ 6 V	-40°C ~ 105°C (TA)	-	-	-
MT41J128M16HA-15E IT:D	Micron Technology Inc.	IC SDRAM 2GBIT 667MHZ 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	패키지: 96-TFBGA	재고7,472	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	-	13.5ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
IDT71V424S12Y	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 36SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ	패키지: 36-BSOJ (0.400", 10.16mm Width)	재고10,536	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	36-BSOJ (0.400", 10.16mm Width)	36-SOJ
IDT71V3576YS133PFG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,832	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT48LC4M16A2P-6:G	Micron Technology Inc.	IC SDRAM 64MBIT 167MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고15,684	DRAM	SDRAM	64Mb (4M x 16)	Parallel	167MHz	12ns	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
7024L15JG8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 15NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	패키지: 84-LCC (J-Lead)	재고4,656	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
MTFC4GGQDQ-IT	Micron Technology Inc.	IC FLASH 32GBIT 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,944	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
71V3556SA100BG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고4,432	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
N25Q256A11ESF40F TR	Micron Technology Inc.	IC FLASH 256MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (64M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	패키지: 16-SOIC (0.295", 7.50mm Width)	재고7,072	FLASH	FLASH - NOR	256Mb (64M x 4)	SPI	108MHz	8ms, 5ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
IS25LQ032B-JMLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 32MBIT 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고5,280	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O	104MHz	1ms	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS61C3216AL-12KLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 512KBIT 12NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고2,576	SRAM	SRAM - Asynchronous	512Kb (32K x 16)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
SST39VF801C-70-4I-B3KE-T	Microchip Technology	IC FLASH 8MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고7,392	FLASH	FLASH	8Mb (512K x 16)	Parallel	-	10µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
24AA256UID-I/ST	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,616	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
93C56CT-E/ST	Microchip Technology	IC EEPROM 2KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고3,952	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1418KV18-250BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,880	SRAM	SRAM - Synchronous, DDR II	36Mb (2M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CYD18S36V18-167BBAI	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 256FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-FBGA (17x17)	패키지: 256-LBGA	재고7,884	SRAM	SRAM - Dual Port, Synchronous	18Mb (512K x 36)	Parallel	167MHz	-	4ns	1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	256-LBGA	256-FBGA (17x17)
AT25DF041B-XMHNHR-T	Adesto Technologies	IC FLASH 4MBIT 85MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 2.5ms Access Time: - Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,808	FLASH	FLASH	4Mb (512K x 8)	SPI	85MHz	8µs, 2.5ms	-	1.7 V ~ 3.6 V	-40°C ~ 125°C (TC)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
24LC64-I/SN	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고113,544	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24LC16B-I/SN	Microchip Technology	IC EEPROM 16KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고181,836	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY62148GN-45SXIT	Cypress Semiconductor Corp	IC SRAM 4M PARALLEL 32SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.445", 11.30mm Width) Supplier Device Package: 32-SOIC	패키지: 32-SOIC (0.445", 11.30mm Width)	재고5,920	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-SOIC (0.445", 11.30mm Width)	32-SOIC
R1RW0416DSB-2PR#D1	Renesas Electronics America	IC SRAM IBIS ASYNC Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고2,016	SRAM	SRAM	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CY15V116QI-20BKXCT	Infineon Technologies	FRAM Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 16Mbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	16Mbit	SPI	20 MHz	-	20 ns	1.71V ~ 1.89V	0°C ~ 70°C (TA)	Surface Mount	24-TBGA	24-FBGA (6x8)
MT62F512M32D1DS-023-AAT-E	Micron Technology Inc.	LPDDR5 16GBIT 32 315/315 TFBGA 1 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q16JVSSJM-TR	Winbond Electronics	IC FLASH 16MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	SPI - Quad I/O	133 MHz	3ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
CAT93C46BVI-G	onsemi	IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 4 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	4 MHz	5ms	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
GD25LQ80ETIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 8MBIT SPI/QUAD 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 8Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 2.4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	8Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 2.4ms	6 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MT53E768M32D2ZW-046-AAT-C-TR	Micron Technology Inc.	LPDDR4 24GBIT 32 200/264 TFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BY25D16ASTIG-R	BYTe Semiconductor	16 MBIT, 3.0V (2.7V TO 3.6V), -4 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 2.4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Dual I/O	108 MHz	2.4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IS46TR16640BL-125KBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
MT29F1T08EBLCHB58R3WC1-K	Micron Technology Inc.	128GX8 NAND FLASH DIE-COM 2.5V M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

CAT24C01BWA

ON Semiconductor

IC MEM EEPROM 1KB 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 1µs
Voltage - Supply: 1.8 V ~ 6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,832

EEPROM

1Kb (128 x 8)

I2C

400kHz

10ms

1µs

1.8 V ~ 6 V

-40°C ~ 105°C (TA)

-

MT41J128M16HA-15E IT:D

Micron Technology Inc.

IC SDRAM 2GBIT 667MHZ 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

패키지: 96-TFBGA

재고7,472

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

-

13.5ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

IDT71V424S12Y

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 36SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ

패키지: 36-BSOJ (0.400", 10.16mm Width)

재고10,536

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

36-BSOJ (0.400", 10.16mm Width)

36-SOJ

IDT71V3576YS133PFG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,832

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT48LC4M16A2P-6:G

Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고15,684

DRAM

SDRAM

64Mb (4M x 16)

Parallel

167MHz

12ns

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

7024L15JG8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 15NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

패키지: 84-LCC (J-Lead)

재고4,656

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

MTFC4GGQDQ-IT

Micron Technology Inc.

IC FLASH 32GBIT 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,944

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

71V3556SA100BG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고4,432

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

N25Q256A11ESF40F TR

Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (64M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

패키지: 16-SOIC (0.295", 7.50mm Width)

재고7,072

FLASH

FLASH - NOR

256Mb (64M x 4)

SPI

108MHz

8ms, 5ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

IS25LQ032B-JMLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 32MBIT 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고5,280

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O

104MHz

1ms

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS61C3216AL-12KLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 512KBIT 12NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고2,576

SRAM

SRAM - Asynchronous

512Kb (32K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

SST39VF801C-70-4I-B3KE-T

Microchip Technology

IC FLASH 8MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고7,392

FLASH

8Mb (512K x 16)

Parallel

-

10µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

24AA256UID-I/ST

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,616

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

93C56CT-E/ST

Microchip Technology

IC EEPROM 2KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고3,952

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1418KV18-250BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,880

SRAM

SRAM - Synchronous, DDR II

36Mb (2M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CYD18S36V18-167BBAI

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 256FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-FBGA (17x17)

패키지: 256-LBGA

재고7,884

SRAM

SRAM - Dual Port, Synchronous

18Mb (512K x 36)

Parallel

167MHz

-

4ns

1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

256-LBGA

256-FBGA (17x17)

AT25DF041B-XMHNHR-T

Adesto Technologies

IC FLASH 4MBIT 85MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 2.5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,808

FLASH

4Mb (512K x 8)

SPI

85MHz

8µs, 2.5ms

-

1.7 V ~ 3.6 V

-40°C ~ 125°C (TC)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

24LC64-I/SN

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고113,544

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24LC16B-I/SN

Microchip Technology

IC EEPROM 16KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고181,836

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY62148GN-45SXIT

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 32SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOIC

패키지: 32-SOIC (0.445", 11.30mm Width)

재고5,920

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-SOIC (0.445", 11.30mm Width)

32-SOIC

R1RW0416DSB-2PR#D1

Renesas Electronics America

IC SRAM IBIS ASYNC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고2,016

SRAM

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CY15V116QI-20BKXCT

Infineon Technologies

FRAM

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Mbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

16Mbit

SPI

20 MHz

-

20 ns

1.71V ~ 1.89V

0°C ~ 70°C (TA)

Surface Mount

24-TBGA

24-FBGA (6x8)

MT62F512M32D1DS-023-AAT-E

Micron Technology Inc.

LPDDR5 16GBIT 32 315/315 TFBGA 1

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W25Q16JVSSJM-TR

Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

SPI - Quad I/O

133 MHz

3ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

CAT93C46BVI-G

onsemi

IC EEPROM 1KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 4 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

1Kbit

Microwire

4 MHz

5ms

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

GD25LQ80ETIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/QUAD 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 2.4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

8Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 2.4ms

6 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MT53E768M32D2ZW-046-AAT-C-TR

Micron Technology Inc.

LPDDR4 24GBIT 32 200/264 TFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BY25D16ASTIG-R

BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 2.4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Dual I/O

108 MHz

2.4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IS46TR16640BL-125KBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

MT29F1T08EBLCHB58R3WC1-K

Micron Technology Inc.

128GX8 NAND FLASH DIE-COM 2.5V M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-