Infineon Technologies 제품

IRG7PH42UPBF

Infineon Technologies

IGBT 1200V 90A 385W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 385W
• Switching Energy: 2.11mJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 25ns/229ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IPP100N04S2L03AKSA2

Infineon Technologies

MOSFET N-CH 40V 100A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

패키지: TO-220-3

AUIRF3315S

Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPP02N60S5HKSA1

Infineon Technologies

MOSFET N-CH 600V 1.8A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

패키지: TO-220-3

IRF6602

Infineon Technologies

MOSFET N-CH 20V 11A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MQ
• Package / Case: DirectFET? Isometric MQ

패키지: DirectFET? Isometric MQ

IPD70N10S312ATMA1

Infineon Technologies

MOSFET N-CH 100V 70A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 83µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR220NTRPBF

Infineon Technologies

MOSFET N-CH 200V 5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 43W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF60B217

Infineon Technologies

MOSFET N-CH 60V 60A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

SN7002WH6327XTSA1

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT323-3
• Package / Case: SC-70, SOT-323

패키지: SC-70, SOT-323

BF998RE6327HTSA1

Infineon Technologies

MOSFET N-CH RF 12V 30MA SOT-143

• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 28dB
• Voltage - Test: 8V
• Current Rating: 30mA
• Noise Figure: 2.8dB
• Current - Test: 10mA
• Power - Output: -
• Voltage - Rated: 12V
• Package / Case: SOT-143R
• Supplier Device Package: PG-SOT143R-4

패키지: SOT-143R

PTFB092707FHV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BFR 340T E6327

Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
• Gain: 15dB
• Power - Max: 60mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (Ic) (Max): 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

BFP640FESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 50MA 4TSFP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 46GHz
• Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
• Gain: 8B ~ 30.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

BFR 193 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10dB ~ 15dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

IDW30G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 30A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 220µA @ 650V
• Capacitance @ Vr, F: 860pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

IDH10G120C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 1200V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 62µA @ 1200V
• Capacitance @ Vr, F: 525pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2-1
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

BAS1603WE6327HTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2
• Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

TLS810D1EJV33XUMA1

Infineon Technologies

IC REG LINEAR 3.3V 100MA DSO-8

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10µA ~ 15µA
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE4286GHTSA1

Infineon Technologies

IC REG LINEAR 5V 15MA SCT595-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.1V @ 10mA
• Current - Output: 15mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 60dB (100Hz)
• Control Features: Inhibit
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

패키지: 6-SMD (5 Leads), Gull Wing

IR3092MTRPBF

Infineon Technologies

IC CONTROLLER 2PHASE 48-MLPQ

• Applications: VID Voltage Programmer
• Voltage - Input: -
• Voltage - Supply: 7.3 V ~ 21 V
• Current - Supply: 29mA
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-MLPQ (7x7)

패키지: 48-VFQFN Exposed Pad

BTS500701TMAATMA1

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 30 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 12A
• Rds On (Typ): 7 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO220-7

패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

BTS736L2

Infineon Technologies

IC HISIDE PWR SWITCH 2CH PDSO-20

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.75 V ~ 43 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 4.4A
• Rds On (Typ): 36 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-20

패키지: 20-SOIC (0.295", 7.50mm Width)

BTS721L1

Infineon Technologies

IC SWITCH HI-SIDE 4-CH DSO-20

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.5A
• Rds On (Typ): 85 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20

패키지: 20-SOIC (0.295", 7.50mm Width)

TDA16888GGEGHUMA1

Infineon Technologies

IC PFC CTRLR AVERAGE CURR DSO20

• Mode: Average Current
• Frequency - Switching: 200kHz
• Current - Startup: 50µA
• Voltage - Supply: 0 V ~ 17.5 V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-20

패키지: 20-SOIC (0.295", 7.50mm Width)

IR2130PBF

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-DIP

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 28-DIP (0.600", 15.24mm)
• Supplier Device Package: 28-DIP

패키지: 28-DIP (0.600", 15.24mm)

SAF-XC878M-13FFI 5V AA

Infineon Technologies

IC MCU 8BIT 52KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 52KB (52K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

패키지: 64-LQFP

SLE 66C681PE M5.1

Infineon Technologies

IC SECURITY CTRLR 8/16BIT M5.1

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: M5.1 Chip Card Module
• Supplier Device Package: T-M5.1-9

패키지: M5.1 Chip Card Module

CHL8225G-06CRT

Infineon Technologies

IC REGULATOR PG-VQFN-40-902

• Applications: Controller, GPU Core Power
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: 0°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: 40-VFQFN Exposed Pad

BTS428L2XT

Infineon Technologies

IC PWR SWITCH HIGH SIDE TO252-5

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

KX167CI32F40FBBANT

Infineon Technologies

IC MCU 16BIT 256KB FLASH 144TQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CANbus, EBI/EMI, I²C, SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 12K x 8
• Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

패키지: 144-LQFP