페이지 469 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IRGS4064DPBF	Infineon Technologies	IGBT 600V 20A 101W D2PAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A Power - Max: 101W Switching Energy: 29µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 27ns/79ns Test Condition: 400V, 10A, 22 Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고15,744
AIKW30N60CTXKSA1	Infineon Technologies	IC DISCRETE 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Power - Max: 187W Switching Energy: 690µJ (on), 770µJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 23ns/254ns Test Condition: 400V, 30A, 10.6 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고6,432
IRG4BC30KDSTRRP	Infineon Technologies	IGBT 600V 28A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,432
IRGS8B60KPBF	Infineon Technologies	IGBT 600V 28A 167W D2PAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Power - Max: 167W Switching Energy: 160µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 29nC Td (on/off) @ 25°C: 23ns/140ns Test Condition: 400V, 8A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,888
IKD04N60RFAATMA1	Infineon Technologies	IGBT 600V 8A 75W TO252-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 75W Switching Energy: 60µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 12ns/116ns Test Condition: 400V, 4A, 43 Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,808
IRG4PC50UDPBF	Infineon Technologies	IGBT 600V 55A 200W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A Power - Max: 200W Switching Energy: 990µJ (on), 590µJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: 46ns/140ns Test Condition: 480V, 27A, 5 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고89,736
IRGB5B120KDPBF	Infineon Technologies	IGBT 1200V 12A 89W TO220AB IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A Power - Max: 89W Switching Energy: 390µJ (on), 330µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 600V, 6A, 50 Ohm, 15V Reverse Recovery Time (trr): 160ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,608
FZ30R07W1E3B31ABOMA1	Infineon Technologies	IGBT MODULES IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,480
IPB260N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 27A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 25.7 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,248
IRF7701GTRPBF	Infineon Technologies	MOSFET P-CH 12V 10A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,736
IRF7842TR	Infineon Technologies	MOSFET N-CH 40V 18A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고72,000
IRFP4229PBF	Infineon Technologies	MOSFET N-CH 250V 44A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	패키지: TO-247-3	재고5,840
IRF9328TRPBF	Infineon Technologies	MOSFET P-CH 30V 12A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고466,656
BSC042NE7NS3GATMA1	Infineon Technologies	MOSFET N-CH 75V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	패키지: 8-PowerTDFN	재고2,016
IRF7495PBF	Infineon Technologies	MOSFET N-CH 100V 7.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고32,718
BSS123NH6433XTMA1	Infineon Technologies	MOSFET N-CH 100V 0.19A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고184,872
IPW65R080CFD	Infineon Technologies	MOSFET N-CH 700V 43.3A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5030pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고190,944
IRF7316TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,422,492
BC 807-40W H6327	Infineon Technologies	TRANS PNP 45V 0.5A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고4,064
IDT06S60CHKSA1	Infineon Technologies	DIODE SCHOTTKY 600V TO220-2 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,352
BSP75NNT	Infineon Technologies	MOSFET DRIVER Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Rds On (Typ): 430 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고4,512
TLD1120ELXUMA1	Infineon Technologies	IC LED DRIVER LINEAR 14SSOP Type: Linear Topology: - Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Voltage - Output: 40V Current - Output / Channel: 360mA Frequency: - Dimming: - Applications: Automotive Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-SSOP-14	패키지: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad	재고4,032
PEB 20256 E V2.2	Infineon Technologies	IC NETWORK CONTROLLER BGA-388-2 Function: Network Controller Interface: HDLC, PPP, SS7, TMA Number of Circuits: - Voltage - Supply: 3 V ~ 3.6 V Current - Supply: 200mA Power (Watts): 3W Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 388-BBGA Supplier Device Package: 388-BGA (35x35)	패키지: 388-BBGA	재고5,808
TC1782N320F180HLBAKXUMA1	Infineon Technologies	IC MCU 32BIT 2.5MB FLASH 176LQFP Core Processor: TriCore? Core Size: 32-Bit Speed: 180MHz Connectivity: ASC, CAN, FlexRay, MLI, MSC, SSC Peripherals: DMA, POR, WDT Number of I/O: 86 Program Memory Size: 2.5MB (2.5M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 176K x 8 Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V Data Converters: A/D 8x10b, 32x12b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 176-LQFP Supplier Device Package: PG-LQFP-176-20	패키지: 176-LQFP	재고2,912
XC866L2FRA5VBELXUMA1	Infineon Technologies	IC MCU 8BIT 8KB FLASH 38TSSOP Core Processor: XC800 Core Size: 8-Bit Speed: 25MHz Connectivity: LIN, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 27 Program Memory Size: 8KB (8K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 768 x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 150°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: -	패키지: 38-TFSOP (0.173", 4.40mm Width)	재고3,872
SLB9670XQ20FW760XUMA1	Infineon Technologies	SECURITY IC'S/AUTHENTICATION IC' Applications: Embedded Security Trusted Computing Core Processor: 16-Bit Program Memory Type: - Controller Series: - RAM Size: - Interface: SPI Number of I/O: 1 Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-32-13	패키지: 32-VFQFN Exposed Pad	재고3,904
TLE4946KHTSA1	Infineon Technologies	MAGNETIC SWITCH LATCH SC59 Function: Latch Technology: Hall Effect Polarization: South Pole Sensing Range: 19mT Trip, -19mT Release Test Condition: 25°C Voltage - Supply: 2.7 V ~ 18 V Current - Supply (Max): 6mA Current - Output (Max): 20mA Output Type: Open Collector Features: Temperature Compensated Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: TO-236-3, SC-59, SOT-23-3	재고5,328
TLE4998C3XALA1	Infineon Technologies	SENSOR LINEAR PWM SSO3 Type: Linear Technology: Hall Effect Axis: Single Output Type: PWM Sensing Range: ±50mT, ±100mT, ±200mT Voltage - Supply: 4.5 V ~ 5.5 V Current - Supply (Max): 8mA Current - Output (Max): 5mA Resolution: 16 b Bandwidth: Programmable Operating Temperature: -40°C ~ 125°C (TJ) Features: Selectable Scale, Temperature Compensated Package / Case: 3-SIP, SSO-3-10 Supplier Device Package: PG-SSO-3-10	패키지: 3-SIP, SSO-3-10	재고5,922
SRF 55V02P Y1/0	Infineon Technologies	IC EEPROM 2KBIT INTELLIG Y1.0-2 Type: RFID Transponder Frequency: 13.56MHz Standards: ISO 15693, ISO 18000-3 Interface: - Voltage - Supply: - Operating Temperature: -25°C ~ 70°C Package / Case: - Supplier Device Package: -	패키지: -	재고4,104
IR3570AMGB12TRP	Infineon Technologies	IC REGULATOR PG-VQFN-40-901 Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Supplier Device Package: 40-VQFN (5x5)	패키지: 40-VFQFN Exposed Pad	재고6,512

IRGS4064DPBF

Infineon Technologies

IGBT 600V 20A 101W D2PAK

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Power - Max: 101W
Switching Energy: 29µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 27ns/79ns
Test Condition: 400V, 10A, 22 Ohm, 15V
Reverse Recovery Time (trr): 62ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고15,744

AIKW30N60CTXKSA1

Infineon Technologies

IC DISCRETE 600V TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Power - Max: 187W
Switching Energy: 690µJ (on), 770µJ (off)
Input Type: Standard
Gate Charge: 167nC
Td (on/off) @ 25°C: 23ns/254ns
Test Condition: 400V, 30A, 10.6 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고6,432

IRG4BC30KDSTRRP

Infineon Technologies

IGBT 600V 28A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 600µJ (on), 580µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 60ns/160ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,432

IRGS8B60KPBF

Infineon Technologies

IGBT 600V 28A 167W D2PAK

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Power - Max: 167W
Switching Energy: 160µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 29nC
Td (on/off) @ 25°C: 23ns/140ns
Test Condition: 400V, 8A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,888

IKD04N60RFAATMA1

Infineon Technologies

IGBT 600V 8A 75W TO252-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 12A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Power - Max: 75W
Switching Energy: 60µJ (on), 50µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 12ns/116ns
Test Condition: 400V, 4A, 43 Ohm, 15V
Reverse Recovery Time (trr): 34ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,808

IRG4PC50UDPBF

Infineon Technologies

IGBT 600V 55A 200W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Power - Max: 200W
Switching Energy: 990µJ (on), 590µJ (off)
Input Type: Standard
Gate Charge: 180nC
Td (on/off) @ 25°C: 46ns/140ns
Test Condition: 480V, 27A, 5 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고89,736

IRGB5B120KDPBF

Infineon Technologies

IGBT 1200V 12A 89W TO220AB

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A
Power - Max: 89W
Switching Energy: 390µJ (on), 330µJ (off)
Input Type: Standard
Gate Charge: 25nC
Td (on/off) @ 25°C: 22ns/100ns
Test Condition: 600V, 6A, 50 Ohm, 15V
Reverse Recovery Time (trr): 160ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,608

FZ30R07W1E3B31ABOMA1

Infineon Technologies

IGBT MODULES

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,480

IPB260N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 27A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 25.7 mOhm @ 27A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,248

IRF7701GTRPBF

Infineon Technologies

MOSFET P-CH 12V 10A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,736

IRF7842TR

Infineon Technologies

MOSFET N-CH 40V 18A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고72,000

IRFP4229PBF

Infineon Technologies

MOSFET N-CH 250V 44A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

패키지: TO-247-3

재고5,840

IRF9328TRPBF

Infineon Technologies

MOSFET P-CH 30V 12A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고466,656

BSC042NE7NS3GATMA1

Infineon Technologies

MOSFET N-CH 75V 100A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 37.5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

재고2,016

IRF7495PBF

Infineon Technologies

MOSFET N-CH 100V 7.3A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고32,718

BSS123NH6433XTMA1

Infineon Technologies

MOSFET N-CH 100V 0.19A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고184,872

IPW65R080CFD

Infineon Technologies

MOSFET N-CH 700V 43.3A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5030pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고190,944

IRF7316TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,422,492

BC 807-40W H6327

Infineon Technologies

TRANS PNP 45V 0.5A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고4,064

IDT06S60CHKSA1

Infineon Technologies

DIODE SCHOTTKY 600V TO220-2

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,352

BSP75NNT

Infineon Technologies

MOSFET DRIVER

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Rds On (Typ): 430 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고4,512

TLD1120ELXUMA1

Infineon Technologies

IC LED DRIVER LINEAR 14SSOP

Type: Linear
Topology: -
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Voltage - Output: 40V
Current - Output / Channel: 360mA
Frequency: -
Dimming: -
Applications: Automotive
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-SSOP-14

패키지: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

재고4,032

PEB 20256 E V2.2

Infineon Technologies

IC NETWORK CONTROLLER BGA-388-2

Function: Network Controller
Interface: HDLC, PPP, SS7, TMA
Number of Circuits: -
Voltage - Supply: 3 V ~ 3.6 V
Current - Supply: 200mA
Power (Watts): 3W
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Supplier Device Package: 388-BGA (35x35)

패키지: 388-BBGA

재고5,808

TC1782N320F180HLBAKXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 176LQFP

Core Processor: TriCore?
Core Size: 32-Bit
Speed: 180MHz
Connectivity: ASC, CAN, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Number of I/O: 86
Program Memory Size: 2.5MB (2.5M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 176K x 8
Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
Data Converters: A/D 8x10b, 32x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 176-LQFP
Supplier Device Package: PG-LQFP-176-20

패키지: 176-LQFP

재고2,912

XC866L2FRA5VBELXUMA1

Infineon Technologies

IC MCU 8BIT 8KB FLASH 38TSSOP

Core Processor: XC800
Core Size: 8-Bit
Speed: 25MHz
Connectivity: LIN, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 27
Program Memory Size: 8KB (8K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 768 x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: -

패키지: 38-TFSOP (0.173", 4.40mm Width)

재고3,872

SLB9670XQ20FW760XUMA1

Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Program Memory Type: -
Controller Series: -
RAM Size: -
Interface: SPI
Number of I/O: 1
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-32-13

패키지: 32-VFQFN Exposed Pad

재고3,904

TLE4946KHTSA1

Infineon Technologies

MAGNETIC SWITCH LATCH SC59

Function: Latch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 19mT Trip, -19mT Release
Test Condition: 25°C
Voltage - Supply: 2.7 V ~ 18 V
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Output Type: Open Collector
Features: Temperature Compensated
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

재고5,328

TLE4998C3XALA1

Infineon Technologies

SENSOR LINEAR PWM SSO3

Type: Linear
Technology: Hall Effect
Axis: Single
Output Type: PWM
Sensing Range: ±50mT, ±100mT, ±200mT
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Resolution: 16 b
Bandwidth: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SIP, SSO-3-10
Supplier Device Package: PG-SSO-3-10

패키지: 3-SIP, SSO-3-10

재고5,922

SRF 55V02P Y1/0

Infineon Technologies

IC EEPROM 2KBIT INTELLIG Y1.0-2

Type: RFID Transponder
Frequency: 13.56MHz
Standards: ISO 15693, ISO 18000-3
Interface: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 70°C
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,104

IR3570AMGB12TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Supplier Device Package: 40-VQFN (5x5)

패키지: 40-VFQFN Exposed Pad

재고6,512