Infineon Technologies 제품

IRG7PG42UD-EPBF

Infineon Technologies

IGBT 1000V 85A 320W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 320W
• Switching Energy: 2.11mJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 25ns/229ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 153ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

IRG7PH42UD1-EP

Infineon Technologies

IGBT 1200V 85A COPAK247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 313W
• Switching Energy: 1.21mJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: -/270ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

IRG6I330U-110P

Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
• Power - Max: 43W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 39ns/120ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

BUZ31L H

Infineon Technologies

MOSFET N-CH 200V 13.5A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 95W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

SPW11N60S5FKSA1

Infineon Technologies

MOSFET N-CH 600V 11A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

패키지: TO-247-3

IRF7353D1TRPBF

Infineon Technologies

MOSFET N-CH 30V 6.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IRFR3704ZPBF

Infineon Technologies

MOSFET N-CH 20V 60A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRL3714ZS

Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3711ZS

Infineon Technologies

MOSFET N-CH 20V 92A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSF035NE2LQXUMA1

Infineon Technologies

MOSFET N-CH 25V 22A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M?
• Package / Case: 3-WDSON

패키지: 3-WDSON

IPP65R190C6XKSA1

Infineon Technologies

MOSFET N-CH 650V 20.2A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

PTFA210601F V4

Infineon Technologies

IC FET RF LDMOS 60W H-37265-2

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 16dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 550mA
• Power - Output: 12W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37265-2

패키지: 2-Flatpack, Fin Leads, Flanged

IRF8513TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A, 11A
• Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
• Power - Max: 1.5W, 2.4W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

BFP780H6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6.1V
• Frequency - Transition: 900MHz
• Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
• Gain: 27dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
• Current - Collector (Ic) (Max): 120mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT343-4-2

패키지: SC-82A, SOT-343

BB 565 E7902

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD-80

• Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
• Capacitance Ratio: 11
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

패키지: SC-80

IDL06G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 6A VSON-4

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 110µA @ 650V
• Capacitance @ Vr, F: 190pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 4-PowerTSFN
• Supplier Device Package: PG-VSON-4
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: 4-PowerTSFN

IDP30E60XKSA1

Infineon Technologies

DIODE GEN PURP 600V 52.3A TO220

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 52.3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 126ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

IP2003TRPBF

Infineon Technologies

IC REG BUCK ADJ 40A SYNC LGA

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 13.2V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 3.3V
• Current - Output: 40A
• Frequency - Switching: 300kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Power Block (LGA)
• Supplier Device Package: LGA (11x11)

패키지: Power Block (LGA)

ITS612N1E3230HKSA1

Infineon Technologies

IC SWITCH HISIDE SMART TO220-7

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.8A
• Rds On (Typ): 160 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -30°C ~ 85°C (TA)
• Package / Case: TO-220-7
• Supplier Device Package: PG-TO220-7

패키지: TO-220-7

TLE6240GP

Infineon Technologies

IC SW SMART 16-CH LOWSIDE PDSO36

• Switch Type: General Purpose
• Number of Outputs: 16
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 45V (Max)
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Current - Output (Max): -
• Rds On (Typ): 300 mOhm, 350 mOhm, 1 Ohm
• Input Type: -
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

패키지: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

BTT60301EKAXUMA1

Infineon Technologies

IC PWR SW HI-SIDE 1CH 14DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 36 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 6A
• Rds On (Typ): 31 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-14-47-EP

패키지: 14-SOIC (0.154", 3.90mm Width) Exposed Pad

TLE42064GXUMA2

Infineon Technologies

IC MOTOR DRIVER PAR 14SOIC

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: Automotive
• Current - Output: 800mA
• Voltage - Supply: 8 V ~ 18 V
• Voltage - Load: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IRS26320C

Infineon Technologies

IC MOSFET DRIVER

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

1EDI20I12MHXUMA1

Infineon Technologies

IC IGBT DVR 1200V 8DSO

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT
• Voltage - Supply: 13 V ~ 18 V
• Logic Voltage - VIL, VIH: 1.5V, 3.5V
• Current - Peak Output (Source, Sink): 3.5A, 3.2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 10ns, 9ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 8-DSO

패키지: 8-SOIC (0.295", 7.50mm Width)

PEB 3324 E V1.4

Infineon Technologies

IC CODEC VOIP LBGA-176

• Function: Analog Voice Access
• Interface: ADPCM
• Number of Circuits: 4
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): 400mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 176-LBGA
• Supplier Device Package: PG-LBGA-176

패키지: 176-LBGA

TLE9250XSJXUMA1

Infineon Technologies

IC LIN TRANSCEIVER DSO-8

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: -
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 3.3V, 5V
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

XC888CLM8FFA5VACKXUMA1

Infineon Technologies

IC MCU 8BIT 32KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: CAN, LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 48
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1.75K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: -

패키지: 64-LQFP

TLE49613MXTSA1

Infineon Technologies

IC HALL EFFECT LATCH SOT23-3

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE63892GVNTMA1

Infineon Technologies

IC REG CTRLR BUCK 14DSOP

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TC275TP64F200WDCKXUMA1

Infineon Technologies

IC MCU 32BIT 4MB FLASH 176TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -