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IXYS |
IGBT 1200V 30A 150W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Power - Max: 150W
- Switching Energy: 1.75mJ (off)
- Input Type: Standard
- Gate Charge: 69nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 960V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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패키지: TO-247-3 |
재고103,464 |
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IXYS |
IGBT 4500V 90A 417W I5-PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 4500V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 680A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
- Power - Max: 417W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 366nC
- Td (on/off) @ 25°C: 55ns/450ns
- Test Condition: 960V, 60A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-Pak?
- Supplier Device Package: ISOPLUSi5-Pak?
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패키지: ISOPLUSi5-Pak? |
재고7,616 |
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IXYS |
IGBT 2500V 13A 150W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500V
- Current - Collector (Ic) (Max): 13A
- Current - Collector Pulsed (Icm): 46A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
- Power - Max: 150W
- Switching Energy: 360µJ (off)
- Input Type: Standard
- Gate Charge: 57nC
- Td (on/off) @ 25°C: -/350ns
- Test Condition: 1250V, 4A, 20 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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패키지: TO-247-3 |
재고6,912 |
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IXYS |
IGBT 900V 64A 300W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900V
- Current - Collector (Ic) (Max): 64A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
- Power - Max: 300W
- Switching Energy: 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 89nC
- Td (on/off) @ 25°C: 20ns/260ns
- Test Condition: 720V, 32A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 190ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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패키지: TO-247-3 |
재고3,408 |
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IXYS |
IGBT MODULE 1200V 30A
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 43A
- Power - Max: 150W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 1.5mA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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패키지: E2 |
재고4,528 |
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IXYS |
MOSFET N-CH 150V 80A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고3,264 |
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IXYS |
MOSFET N-CH 200V 170A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고7,280 |
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IXYS |
MOSFET N-CH 300V 52A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고7,520 |
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IXYS |
MOSFET P-CH 100V 90A ISOPLUS247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고7,984 |
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IXYS |
MOSFET N-CH 500V 30A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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패키지: ISOPLUS247? |
재고6,080 |
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IXYS |
MOSFET N-CH 500V 28A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고6,352 |
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IXYS |
MOSFET N-CH 1000V 4A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고7,120 |
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IXYS |
MOSFET N-CH 500V 36A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고5,872 |
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IXYS |
MOSFET N-CH 500V 64A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고6,416 |
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IXYS |
MOSFET N-CH 650V 76A X2 SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 76A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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패키지: SOT-227-4, miniBLOC |
재고4,848 |
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IXYS |
MOSFET N-CH 2000V 1A TO-263HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2000V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 40 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,252 |
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IXYS |
MOSFET N-CH 100V 200A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고18,924 |
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IXYS |
MOD THYRISTOR 1200V 105A ECOPAC2
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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패키지: ECO-PAC2 |
재고5,776 |
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IXYS |
RECT BRIDGE 1PH 1400V V1A-PAK
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 4 Diodes
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 28A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 330A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1A-PAK
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패키지: V1A-PAK |
재고2,096 |
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IXYS |
MOD THYRISTOR 1800V 180A ECOPAC2
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 180A
- Current - On State (It (RMS)) (Max): 280A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4900A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 130°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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패키지: ECO-PAC2 |
재고5,392 |
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IXYS |
MODULE AC CONTROL 1600V ECO-PAC1
- Structure: 1-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 80A
- Current - On State (It (RMS)) (Max): 125A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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패키지: Module |
재고5,968 |
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IXYS |
DIODE SCHOTTKY 45V 10A TO220FP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FP
- Operating Temperature - Junction: -55°C ~ 150°C
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패키지: TO-220-2 Full Pack |
재고2,336 |
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IXYS |
DIODE SCHOTTKY 45V 6A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고42,000 |
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IXYS |
DIODE MODULE 1.8KV 950A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 950A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18µs
- Current - Reverse Leakage @ Vr: 50mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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패키지: Module |
재고7,264 |
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IXYS |
DIODE MODULE 1.2KV 128A ECO-PAC2
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 128A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 12mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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패키지: ECO-PAC2 |
재고7,136 |
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IXYS |
DIODE BRIDGE 1600V 180A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.16V @ 60A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
- Supplier Device Package: PWS-E-Flat
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패키지: V2-PAK |
재고4,400 |
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IXYS |
3-PHASE BRIDGE RECT 800V 40A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 800V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 5-SIP
- Supplier Device Package: GUFP
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패키지: 5-SIP |
재고4,544 |
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IXYS |
MOSFET STAGE BOOST 500V V1-B
- Diode Type: Single Phase (PFC Module)
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A
- Current - Reverse Leakage @ Vr: 1.5mA @ 600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-B
- Supplier Device Package: V1-B-Pack
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패키지: V1-B |
재고4,720 |
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IXYS |
IC MOSFET DRVR DUAL 2A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고157,080 |
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IXYS |
IC MOSFET DVR RF 30A LOW DCB
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 8 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 30A, 30A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 4ns, 4ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: -
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패키지: 6-SMD, Flat Lead Exposed Pad |
재고8,952 |
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