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IXYS |
IGBT 600V 24A 100W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 24A
- Current - Collector Pulsed (Icm): 48A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 100W
- Switching Energy: 90µJ (off)
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 20ns/60ns
- Test Condition: 480V, 12A, 18 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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패키지: TO-247-3 |
재고3,392 |
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IXYS |
IGBT 1200V 70A 300W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
- Power - Max: 300W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 36ns/160ns
- Test Condition: 960V, 35A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고3,280 |
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IXYS |
IGBT 1200V 30A 150W TO263AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
- Power - Max: 150W
- Switching Energy: 1.75mJ (off)
- Input Type: Standard
- Gate Charge: 57nC
- Td (on/off) @ 25°C: 30ns/148ns
- Test Condition: 960V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 AA (IXSA)
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고2,400 |
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IXYS |
IGBT 600V 75A 400W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 400W
- Switching Energy: 550µJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 18ns/190ns
- Test Condition: 480V, 40A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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패키지: TO-247-3 |
재고3,536 |
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IXYS |
IGBT 1600V 28A 250W I4PAC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1600V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
- Power - Max: 250W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 130nC
- Td (on/off) @ 25°C: -
- Test Condition: 960V, 25A, 22 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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패키지: i4-Pac?-5 (3 leads) |
재고3,168 |
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IXYS |
IGBT 600V 380A 1630W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 380A
- Current - Collector Pulsed (Icm): 900A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
- Power - Max: 1630W
- Switching Energy: 2.85mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 315nC
- Td (on/off) @ 25°C: 48ns/160ns
- Test Condition: 360V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXXK)
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패키지: TO-264-3, TO-264AA |
재고3,504 |
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IXYS |
IGBT 1200V 40A 278W TO-247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 278W
- Switching Energy: 1.3mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 53nC
- Td (on/off) @ 25°C: 20ns/90ns
- Test Condition: 600V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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패키지: TO-247-3 |
재고3,216 |
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IXYS |
IGBT 600V 170A 695W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 170A
- Current - Collector Pulsed (Icm): 340A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
- Power - Max: 695W
- Switching Energy: 2mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 150nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 360V, 70A, 2 Ohm, 15V
- Reverse Recovery Time (trr): 140ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA Variation
- Supplier Device Package: TO-264 (IXXK)
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패키지: TO-264-3, TO-264AA Variation |
재고5,696 |
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IXYS |
IGBT 650V 370A 1150W PLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 370A
- Current - Collector Pulsed (Icm): 1000A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
- Power - Max: 1150W
- Switching Energy: 4.4mJ (on), 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 553nC
- Td (on/off) @ 25°C: 62ns/245ns
- Test Condition: 400V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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패키지: TO-247-3 |
재고7,536 |
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IXYS |
IGBT 3600V 45A ISOPLUS I4PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3600V
- Current - Collector (Ic) (Max): 45A
- Current - Collector Pulsed (Icm): 220A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 230W
- Switching Energy: 15.5mJ (on), 4.3mJ (off)
- Input Type: Standard
- Gate Charge: 43nC
- Td (on/off) @ 25°C: 18ns/238ns
- Test Condition: 1500V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 1.7µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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패키지: i4-Pac?-5 |
재고7,408 |
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IXYS |
MOD IGBT SIXPACK RBSOA 1200V E3
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 165A
- Power - Max: 640W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
- Current - Collector Cutoff (Max): 1.4mA
- Input Capacitance (Cies) @ Vce: 7.4nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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패키지: E3 |
재고4,096 |
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IXYS |
MODULE IGBT CBI E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 11A
- Power - Max: 45W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
- Current - Collector Cutoff (Max): 20µA
- Input Capacitance (Cies) @ Vce: 0.435nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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패키지: E1 |
재고4,816 |
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IXYS |
MOSFET N-CH 500V 48A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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패키지: SOT-227-4, miniBLOC |
재고7,632 |
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IXYS |
MOSFET N-CH 500V 21A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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패키지: ISOPLUS220? |
재고5,456 |
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IXYS |
MOSFET N-CH 75V 160A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고7,712 |
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IXYS |
MOSFET N-CH 200V 96A PLUS 220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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패키지: TO-220-3, Short Tab |
재고6,864 |
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IXYS |
MOSFET N-CH 300V 130A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 130A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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패키지: SOT-227-4, miniBLOC |
재고4,368 |
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IXYS |
MOSFET N-CH 800V 29A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 29A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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패키지: SOT-227-4, miniBLOC |
재고6,288 |
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IXYS |
MOSFET N-CH 600V 14A TO-263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 327W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고7,164 |
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IXYS |
MOSFET N-CH 500V 44A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 658W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고103,596 |
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IXYS |
MOD THYRISTOR 3PH 3X28A 1200V
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 3 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 28A
- Current - On State (It (RMS)) (Max): 43A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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패키지: Module |
재고7,728 |
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IXYS |
RECT BRIDGE 3PH 167A 1600V PWSE2
- Structure: Bridge, 3-Phase - SCRs/Diodes
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 167A
- Current - On State (It (RMS)) (Max): 89A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E2
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패키지: PWS-E2 |
재고5,488 |
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IXYS |
MODULE AC CTLR 1200V SOT-227B
- Structure: 1-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 41A
- Current - On State (It (RMS)) (Max): 65A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 800A, 860A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
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패키지: SOT-227-4, miniBLOC |
재고6,064 |
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IXYS |
MOD THYRISTOR/DIODE 1800V Y4-M6
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 190A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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패키지: Y4-M6 |
재고4,640 |
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IXYS |
DIODE ARRAY SCHOTTKY 250V TO263
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io) (per Diode): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3mA @ 250V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고5,504 |
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IXYS |
DIODE MODULE 1.2KV 30A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.72V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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패키지: SOT-227-4, miniBLOC |
재고5,056 |
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IXYS |
DIODE MODULE 1.2KV 52A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 52A
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 2.2mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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패키지: SOT-227-4, miniBLOC |
재고4,880 |
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IXYS |
RECT BRIDGE 3PH 82A 800V V1-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 82A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-A
- Supplier Device Package: V1-A
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패키지: V1-A |
재고6,496 |
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IXYS |
DIODE BRIDGE 31A 1600V STD FO-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 31A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
- Current - Reverse Leakage @ Vr: 300µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, FO-A
- Supplier Device Package: FO-A
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패키지: 4-Square, FO-A |
재고6,000 |
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IXYS |
IC CURRENT REGULATOR TO220AB
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 50mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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패키지: TO-220-3 |
재고6,128 |
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