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IXYS |
IGBT 600V 76A 200W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 76A
- Current - Collector Pulsed (Icm): 152A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 41A
- Power - Max: 200W
- Switching Energy: 8mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 30ns/600ns
- Test Condition: 480V, 41A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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패키지: TO-247-3 |
재고3,472 |
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IXYS |
IGBT 1200V 20A 85W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
- Power - Max: 85W
- Switching Energy: 1.1mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 10A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 350ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고5,664 |
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IXYS |
IGBT 100A 600V SOT-227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 160A
- Power - Max: 500W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 80A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 8.5nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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패키지: SOT-227-4, miniBLOC |
재고4,272 |
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IXYS |
IGBT 6000V SOT227
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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패키지: - |
재고3,344 |
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IXYS |
MOSFET N-CH 500V 74A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1400W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고3,648 |
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IXYS |
MOSFET N-CH 300V 52A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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패키지: TO-220-3, Short Tab |
재고7,184 |
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IXYS |
MOSFET N-CH 1200V 13A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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패키지: ISOPLUS247? |
재고4,336 |
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IXYS |
MOSFET N-CH 800V 27A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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패키지: TO-264-3, TO-264AA |
재고40,956 |
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IXYS |
MOSFET N-CH 150V 220A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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패키지: TO-264-3, TO-264AA |
재고5,888 |
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IXYS |
MOSFET N-CH 600V 23A TO-268(D3)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고4,096 |
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IXYS |
MOSFET N-CH 300V 52A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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패키지: TO-264-3, TO-264AA |
재고7,232 |
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IXYS |
MOSFET N-CH 1500V 3A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고4,912 |
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IXYS |
MOSFET N-CH 150V 160A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 253nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 880W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고390,000 |
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IXYS |
MOSFET N-CH 40V 300A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA..7)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
재고7,968 |
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IXYS |
60V/270A TRENCHT3 HIPERFET MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고7,760 |
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IXYS |
MOSFET N-CH 100V 75A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고45,060 |
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IXYS |
MOSFET 6N-CH 40V 180A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
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패키지: 17-SMD, Gull Wing |
재고3,808 |
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IXYS |
SCR THRYRISTOR 1800V WC-501
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-501
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패키지: WC-501 |
재고3,824 |
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IXYS |
SCR THRYRISTOR 1600V WC-501
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-501
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패키지: WC-501 |
재고2,512 |
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IXYS |
MOD THYRISTOR/DIODE 1600V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 500A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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패키지: Y2-DCB |
재고6,784 |
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IXYS |
DIODE SCHOTTKY 250V 5.4A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 5.4A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700µA @ 250V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고3,760 |
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IXYS |
DIODE GEN PURP 600V 60A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 650µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
- Operating Temperature - Junction: -55°C ~ 175°C
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패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고6,448 |
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IXYS |
DIODE SCHOTTKY 45V 25A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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패키지: TO-220-2 |
재고6,528 |
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IXYS |
DIODE GEN PURP 300V 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.17V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 42pF @ 150V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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패키지: TO-220-2 |
재고3,792 |
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IXYS |
DIODE ARRAY 600V 6A ISOPLUS220
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
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패키지: ISOPLUS220? |
재고7,664 |
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IXYS |
RECT BRIDGE 3PH 1400V PWS-E-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Current - Reverse Leakage @ Vr: 200µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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패키지: PWS-E1 |
재고6,464 |
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IXYS |
DIODE BRIDGE 1600V 76A ECO-PAC2
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 78A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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패키지: ECO-PAC2 |
재고4,880 |
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IXYS |
RECT BRIDGE 27A 1200V FO-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 27A
- Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 5-Square, FO-B
- Supplier Device Package: FO-B
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패키지: 5-Square, FO-B |
재고7,152 |
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IXYS |
RECT BRIDGE 3PH 58A 1200V FO-F-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 58A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-F-B
- Supplier Device Package: FO-F-B
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패키지: FO-F-B |
재고6,672 |
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IXYS |
IC DRIVER HALF BRDG 600MA 16-MLP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 6V, 7V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650V
- Rise / Fall Time (Typ): 23ns, 22ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-MLP (7x6)
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패키지: 16-VDFN Exposed Pad |
재고6,944 |
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