이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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IXYS Integrated Circuits Division |
2A 8 DIP DUAL INVERTING
|
패키지: 8-DIP (0.300", 7.62mm) |
재고23,196 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
2A MOSFET 8 DIP DUAL INV/NON-INV
|
패키지: 8-DIP (0.300", 7.62mm) |
재고34,056 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 2A DUAL HS 8DFN
|
패키지: 8-VDFN Exposed Pad |
재고6,048 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
2A 8 LEAD SOIC DUAL NON INVERTIN
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,056 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 SOIC DUAL INVERTING
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,896 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 DFN DUAL INVERTING
|
패키지: 8-VDFN Exposed Pad |
재고4,336 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
||
IXYS Integrated Circuits Division |
2A 8 SOIC DUAL INV/NON-INVERTING
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고2,208 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A MOSFET 8 DFN DUAL INV/NON-INV
|
패키지: 8-VDFN Exposed Pad |
재고2,432 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
||
IXYS Integrated Circuits Division |
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고4,896 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DVR INV 1.5A 8-DFN
|
패키지: 8-VDFN Exposed Pad |
재고4,464 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (3x3) |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,104 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고3,152 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,080 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,984 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 3A, 3A | Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR HIGH/LOW 600V 16SOIC
|
패키지: 16-SOIC (0.295", 7.50mm Width) |
재고16,740 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고63,168 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 3A SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고19,296 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 3A, 3A | Non-Inverting | - | 18ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-DI
|
패키지: 8-DIP (0.300", 7.62mm) |
재고3,808 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
IXYS Integrated Circuits Division |
IC IGBT GATE DVR DUAL 16SOIC
|
패키지: 16-SOIC (0.154", 3.90mm Width) |
재고7,056 |
|
Independent | 2 | IGBT | -10 V ~ 25 V | 0.8V, 2V | 2A, 4A | Non-Inverting | - | -, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고10,188 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8DIP
|
패키지: 8-DIP (0.300", 7.62mm), 6 Leads |
재고72,048 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP |
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IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고15,072 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고14,400 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 10ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
1200V HIGH AND LOW SIDE GATE DRI
|
패키지: 28-SOIC (0.295", 7.50mm Width) |
재고5,312 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 1200V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IXYS Integrated Circuits Division |
14A 5PIN TO-220 NON INVERTING
|
패키지: TO-220-5 Formed Leads |
재고13,968 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DFN
|
패키지: 8-VDFN Exposed Pad |
재고6,208 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
||
IXYS Integrated Circuits Division |
1200V HIGH AND LOW SIDE GATE DRI
|
패키지: 28-SOIC (0.295", 7.50mm Width) |
재고7,696 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 15 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 1200V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IXYS Integrated Circuits Division |
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고17,904 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 5A, 5A | Non-Inverting | - | 7ns, 7ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고19,152 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 1.4A, 1.8A | Non-Inverting | 600V | 23ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A DUAL HS TO263-5
|
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
재고16,512 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | TO-263-5 |