페이지 144 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS25LQ010B-JDLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 1MBIT 104MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mb (128K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,800	FLASH	FLASH - NOR	1Mb (128K x 8)	SPI - Quad I/O	104MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IS25LQ512B-JDLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 512KBIT 104MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Kb (64K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고5,600	FLASH	FLASH - NOR	512Kb (64K x 8)	SPI - Quad I/O	104MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IS66WVE1M16BLL-70BLI-TR	ISSI, Integrated Silicon Solution Inc	IC PSRAM 16MBIT 60NS 48BGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고7,200	PSRAM	PSRAM (Pseudo SRAM)	16Mb (1M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS66WVE1M16BLL-70BLI	ISSI, Integrated Silicon Solution Inc	IC PSRAM 16MBIT 60NS 48BGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고50,520	PSRAM	PSRAM (Pseudo SRAM)	16Mb (1M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS46LD32320A-3BPLA25-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고2,064	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32320A-3BPLA25	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고4,032	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32320A-3BPLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고3,232	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32320A-3BPLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고2,656	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32320A-3BPLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고3,344	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32320A-3BPLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고5,184	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS46LD32320A-3BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고4,512	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32320A-3BLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고5,712	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32320A-25BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고3,744	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32320A-25BLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고2,880	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32320A-25BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고2,448	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD32320A-25BLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고3,152	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD16640A-25BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고4,960	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (64M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46LD16640A-25BLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고2,864	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (64M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS45VM16800E-75BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고7,008	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS45VM16800E-75BLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고3,248	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS45VM16800E-75BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고4,672	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS45VM16800E-75BLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고6,640	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42VM32400G-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고5,872	DRAM	SDRAM - Mobile	128Mb (4M x 32)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42VM32400G-6BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고5,328	DRAM	SDRAM - Mobile	128Mb (4M x 32)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42VM32400E-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고4,160	DRAM	SDRAM - Mobile	128Mb (4M x 32)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42VM32400E-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고6,864	DRAM	SDRAM - Mobile	128Mb (4M x 32)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42VM16800G-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고3,280	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42VM16800G-6BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고3,424	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42VM16800E-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고4,752	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS42VM16800E-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고4,464	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)

IS25LQ010B-JDLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT 104MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,800

FLASH

FLASH - NOR

1Mb (128K x 8)

SPI - Quad I/O

104MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IS25LQ512B-JDLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 512KBIT 104MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고5,600

FLASH

FLASH - NOR

512Kb (64K x 8)

SPI - Quad I/O

104MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IS66WVE1M16BLL-70BLI-TR

ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT 60NS 48BGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고7,200

PSRAM

PSRAM (Pseudo SRAM)

16Mb (1M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS66WVE1M16BLL-70BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT 60NS 48BGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고50,520

PSRAM

PSRAM (Pseudo SRAM)

16Mb (1M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS46LD32320A-3BPLA25-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고2,064

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32320A-3BPLA25

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고4,032

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32320A-3BPLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고3,232

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32320A-3BPLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고2,656

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32320A-3BPLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고3,344

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32320A-3BPLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고5,184

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS46LD32320A-3BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고4,512

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32320A-3BLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고5,712

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32320A-25BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고3,744

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32320A-25BLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고2,880

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32320A-25BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고2,448

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD32320A-25BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고3,152

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD16640A-25BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고4,960

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (64M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46LD16640A-25BLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고2,864

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (64M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS45VM16800E-75BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고7,008

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS45VM16800E-75BLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고3,248

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS45VM16800E-75BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고4,672

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS45VM16800E-75BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고6,640

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42VM32400G-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고5,872

DRAM

SDRAM - Mobile

128Mb (4M x 32)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42VM32400G-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고5,328

DRAM

SDRAM - Mobile

128Mb (4M x 32)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42VM32400E-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고4,160

DRAM

SDRAM - Mobile

128Mb (4M x 32)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42VM32400E-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고6,864

DRAM

SDRAM - Mobile

128Mb (4M x 32)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42VM16800G-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고3,280

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42VM16800G-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고3,424

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42VM16800E-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고4,752

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS42VM16800E-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고4,464

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)