페이지 3 - Fujitsu Electronics America, Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MB85R256GPF-G-BNDE1	Fujitsu Electronics America, Inc.	IC FRAM 256KBIT PAR 28SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,344	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	Parallel	-	150ns	150ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MB85R256GPF-G-BND-ERE1	Fujitsu Electronics America, Inc.	IC FRAM 256KBIT PAR 28SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,864	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	Parallel	-	150ns	150ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MB85R256FPF-G-BND-ERE1	Fujitsu Electronics America, Inc.	IC FRAM 256KBIT PAR 28SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,536	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	Parallel	-	150ns	150ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MB85RC16VPNF-G-JNERE1	Fujitsu Electronics America, Inc.	IC FRAM 16KBIT 400KHZ 8SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: - Access Time: 550ns Voltage - Supply: 3 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고32,760	FRAM	FRAM (Ferroelectric RAM)	16Kb (2K x 8)	I2C	1MHz	-	550ns	3 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MB85R256FPF-G-BNDE1	Fujitsu Electronics America, Inc.	IC FRAM 256KBIT 150NS 28SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOP	패키지: 28-SOIC (0.342", 8.69mm Width)	재고2,432	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	Parallel	-	150ns	150ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOP
MB85R4002ANC-GE1	Fujitsu Electronics America, Inc.	IC FRAM 4MBIT 150NS 48TSOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.488", 12.40mm Width)	재고6,608	FRAM	FRAM (Ferroelectric RAM)	4Mb (256K x 16)	Parallel	-	150ns	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
MB85R4001ANC-GE1	Fujitsu Electronics America, Inc.	IC FRAM 4MBIT 150NS 48TSOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.488", 12.40mm Width)	재고2,448	FRAM	FRAM (Ferroelectric RAM)	4Mb (512K x 8)	Parallel	-	150ns	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
MB85R1002ANC-GE1	Fujitsu Electronics America, Inc.	IC FRAM 1MBIT 150NS 48TSOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.488", 12.40mm Width)	재고5,680	FRAM	FRAM (Ferroelectric RAM)	1Mb (64K x 16)	Parallel	-	150ns	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
MB85RS2MTPH-G-JNE1	Fujitsu Electronics America, Inc.	IC FRAM 2MBIT 40MHZ 8SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 25MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,768	FRAM	FRAM (Ferroelectric RAM)	2Mb (256K x 8)	SPI	25MHz	-	-	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP