이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고5,024 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 600V 3.2A TO-263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,432 |
|
MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 5.5V @ 135µA | 16nC @ 10V | 420pF @ 25V | ±20V | - | 38W (Tc) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 91A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고6,736 |
|
MOSFET (Metal Oxide) | 30V | 91A (Tc) | 4.5V, 10V | 3V @ 250µA | 27nC @ 5V | 2672pF @ 16V | ±20V | - | 115W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Renesas Electronics America |
MOSFET N-CH 250V 10A WPAK
|
패키지: 8-PowerWDFN |
재고2,608 |
|
MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | - | 15nC @ 10V | 710pF @ 25V | ±30V | - | 25W (Tc) | 230 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
||
Microsemi Corporation |
MOSFET N-CH 600V 30A D3PAK
|
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
재고5,696 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 1mA | 140nC @ 10V | 5575pF @ 25V | ±30V | - | 520W (Tc) | 220 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
ON Semiconductor |
MOSFET P-CH 20V 3.5A 6-WDFN
|
패키지: 6-WDFN Exposed Pad |
재고2,896 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 15.7nC @ 4.5V | 1329pF @ 16V | ±8V | - | 700mW (Ta) | 40 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 25V 12A IPAK
|
패키지: TO-251-3 Stub Leads, IPak |
재고2,320 |
|
MOSFET (Metal Oxide) | 25V | 12A (Ta), 78A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24nC @ 4.5V | 1960pF @ 12V | ±20V | - | 1.31W (Ta), 56.6W (Tc) | 5.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 25A 20FLFBGA
|
패키지: 20-FLFBGA (30 pos) |
재고2,976 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 3V @ 1mA | 69nC @ 10V | 3845pF @ 15V | ±20V | - | 2.5W (Ta) | 2.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 20-FLFBGA (3.5x4.0) | 20-FLFBGA (30 pos) |
||
Vishay Siliconix |
MOSFET P-CH 30V 0.96A SOT563F
|
패키지: SOT-563, SOT-666 |
재고8,472 |
|
MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 1.45V @ 250µA | 13.3nC @ 10V | 315pF @ 15V | ±12V | - | 236mW (Ta) | 167 mOhm @ 960mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
||
IXYS |
MOSFET N-CH 85V 152A TO-263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고7,536 |
|
MOSFET (Metal Oxide) | 85V | 152A (Tc) | 10V | 4V @ 250µA | 114nC @ 10V | 5500pF @ 25V | ±20V | - | 360W (Tc) | 7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET P-CH 60V 15A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고185,088 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 5V | 2V @ 250µA | 29nC @ 5V | 1190pF @ 25V | ±15V | - | 72W (Tc) | 175 mOhm @ 7.5A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 2A TO-92
|
패키지: TO-226-3, TO-92-3 (TO-226AA) |
재고7,296 |
|
MOSFET (Metal Oxide) | 60V | 2A (Ta) | 10V | 3.5V @ 1mA | - | 70pF @ 25V | ±20V | - | 1W (Ta) | 1.7 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-220AB
|
패키지: TO-220-3 |
재고6,864 |
|
MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | ±30V | - | 170W (Tc) | 750 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 100V 22A TO-220
|
패키지: TO-220-3 |
재고4,448 |
|
MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | ±20V | - | 85W (Tc) | 77 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
HIGH POWER_NEW
|
패키지: - |
재고5,808 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH PLUS247
|
패키지: TO-247-3 |
재고3,040 |
|
MOSFET (Metal Oxide) | 900V | 40A (Tc) | 10V | 6.5V @ 1mA | 230nC @ 10V | 14000pF @ 25V | ±30V | - | 960W (Tc) | 230 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1000V 12A TO-247AD
|
패키지: TO-247-3 |
재고4,304 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | ±20V | - | 300W (Tc) | 1.05 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 350V 0.005A SOT-223
|
패키지: TO-261-4, TO-261AA |
재고5,120 |
|
MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | - | - | 300pF @ 0V | ±20V | Depletion Mode | 2.5W (Ta) | 14 Ohm @ 50mA, 350mV | -40°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
ON Semiconductor |
MOSFET P-CH 20V 660MA SOT-723
|
패키지: SOT-723 |
재고1,345,344 |
|
MOSFET (Metal Oxide) | 20V | 660mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | - | 170pF @ 16V | ±6V | - | 310mW (Ta) | 480 mOhm @ 780mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
||
STMicroelectronics |
MOSFET N-CH 300V 42A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고4,496 |
|
MOSFET (Metal Oxide) | 300V | 42A (Tc) | 10V | 4V @ 250µA | 90nC @ 10V | 3200pF @ 25V | ±20V | - | 300W (Tc) | 75 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 800V 6.2A TO-247
|
패키지: TO-247-3 |
재고45,792 |
|
MOSFET (Metal Oxide) | 800V | 6.2A (Tc) | 10V | 4.5V @ 100µA | 46nC @ 10V | 1320pF @ 25V | ±30V | - | 140W (Tc) | 1.5 Ohm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Rohm Semiconductor |
MOSFET N-CH 200V 45A LPTS
|
패키지: SC-83 |
재고80,820 |
|
MOSFET (Metal Oxide) | 200V | 45A (Tc) | 10V | 5V @ 1mA | 80nC @ 10V | 4200pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 55 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
||
Vishay Siliconix |
MOSFET N-CH 20V 12.5A 1212-8
|
패키지: PowerPAK? 1212-8 |
재고398,040 |
|
MOSFET (Metal Oxide) | 20V | 12.5A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 27nC @ 4.5V | - | ±12V | - | 1.5W (Ta) | 6.2 mOhm @ 19.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
IXYS |
MOSFET N-CH 850V 14A TO220-3
|
패키지: TO-220-3 |
재고4,160 |
|
MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 5.5V @ 1mA | 30nC @ 10V | 1043pF @ 25V | ±30V | - | 460W (Tc) | 550 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
|
패키지: TO-220-3 |
재고66,060 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 25A TO263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고15,324 |
|
MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | ±20V | - | 208W (Tc) | 125 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고25,548 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 1.8V @ 26µA | 1.5nC @ 10V | 45pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 2.4A MLP
|
패키지: 8-PowerWDFN |
재고6,768 |
|
MOSFET (Metal Oxide) | 55V | 2.4A (Ta), 15A (Tc) | 10V | 4V @ 250µA | 11.5nC @ 10V | 350pF @ 25V | ±20V | - | 2.3W (Ta), 35W (Tc) | 900 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET P-CH 30V 8A 6-TSOP
|
패키지: SOT-23-6 Thin, TSOT-23-6 |
재고192,300 |
|
MOSFET (Metal Oxide) | 30V | 8A (Tc) | 10V | 3V @ 250µA | 33nC @ 10V | 1000pF @ 15V | ±20V | - | 2W (Ta), 4.2W (Tc) | 34 mOhm @ 6.1A, 10V | -55°C ~ 150°C (TA) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고771,486 |
|
MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19pF @ 25V | ±20V | - | 360mW (Ta) | 8 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |