페이지 84 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  84/1,401
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRL3303STRRPBF
Infineon Technologies

MOSFET N-CH 30V 38A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,504
MOSFET (Metal Oxide)
30V
38A (Tc)
4.5V, 10V
1V @ 250µA
26nC @ 4.5V
870pF @ 25V
±16V
-
3.8W (Ta), 68W (Tc)
26 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807ZSPBF
Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,048
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 250µA
110nC @ 10V
3270pF @ 25V
±20V
-
170W (Tc)
9.4 mOhm @ 53A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRLR3714
Infineon Technologies

MOSFET N-CH 20V 36A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고120,960
MOSFET (Metal Oxide)
20V
36A (Tc)
4.5V, 10V
3V @ 250µA
9.7nC @ 4.5V
670pF @ 10V
±20V
-
47W (Tc)
20 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFU3910
Infineon Technologies

MOSFET N-CH 100V 16A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고81,108
MOSFET (Metal Oxide)
100V
16A (Tc)
10V
4V @ 250µA
44nC @ 10V
640pF @ 25V
±20V
-
79W (Tc)
115 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
AO3423_102
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고4,320
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot NDF08N60ZH
ON Semiconductor

MOSFET N-CH 600V 8.4A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고5,984
MOSFET (Metal Oxide)
600V
8.4A (Tc)
10V
4.5V @ 100µA
58nC @ 10V
1370pF @ 25V
±30V
-
36W (Tc)
950 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot NTD4863NAT4G
ON Semiconductor

MOSFET N-CH 25V 9.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고253,140
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
-
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
-
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDB8442
Fairchild/ON Semiconductor

MOSFET N-CH 40V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 254W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고8,424
MOSFET (Metal Oxide)
40V
28A (Ta), 80A (Tc)
10V
4V @ 250µA
235nC @ 10V
12200pF @ 25V
±20V
-
254W (Tc)
2.9 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF13N50T
Fairchild/ON Semiconductor

MOSFET N-CH 500V 12.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고3,456
MOSFET (Metal Oxide)
500V
12.5A (Tc)
10V
5V @ 250µA
60nC @ 10V
2300pF @ 25V
±30V
-
56W (Tc)
430 mOhm @ 6.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot IRF9510
Vishay Siliconix

MOSFET P-CH 100V 4A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고390,060
MOSFET (Metal Oxide)
100V
4A (Tc)
10V
4V @ 250µA
8.7nC @ 10V
200pF @ 25V
±20V
-
43W (Tc)
1.2 Ohm @ 2.4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFP76N15T2
IXYS

MOSFET N-CH 150V 76A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고2,624
MOSFET (Metal Oxide)
150V
76A (Tc)
10V
4.5V @ 250µA
97nC @ 10V
5800pF @ 25V
±20V
-
350W (Tc)
20 mOhm @ 38A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot AOD468
Alpha & Omega Semiconductor Inc.

MOSFET N CH 300V 11.5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V
  • Operating Temperature: -50°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고50,592
MOSFET (Metal Oxide)
300V
11.5A (Tc)
10V
4.5V @ 250µA
16nC @ 10V
790pF @ 25V
±30V
-
150W (Tc)
420 mOhm @ 6A, 10V
-50°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5834NLWFT1G
ON Semiconductor

MOSFET N-CH 40V 75A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고6,208
MOSFET (Metal Oxide)
40V
14A (Ta), 75A (Tc)
4.5V, 10V
3V @ 250µA
24nC @ 10V
1231pF @ 20V
±20V
-
3.6W (Ta), 107W (Tc)
9.3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot AOB4184
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 12A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고318,000
MOSFET (Metal Oxide)
40V
12A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
35nC @ 10V
1800pF @ 20V
±20V
-
2.5W (Ta), 50W (Tc)
10 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQS840EN-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 16A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고4,000
MOSFET (Metal Oxide)
40V
12A (Tc)
4.5V, 10V
2.5V @ 250µA
22.5nC @ 10V
1031pF @ 20V
±20V
-
33W (Tc)
20 mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
MCH6331-TL-W
ON Semiconductor

MOSFET P-CH 30V 3.5A MCPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88FL/ MCPH6
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고3,584
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
2.6V @ 1mA
5nC @ 10V
250pF @ 10V
±20V
-
1.5W (Ta)
98 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
SC-88FL/ MCPH6
6-SMD, Flat Leads
AON1606
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 0.7A 3DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 850nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 62.5pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 275 mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-DFN (1.0 x 0.60)
  • Package / Case: 3-UFDFN
패키지: 3-UFDFN
재고6,864
MOSFET (Metal Oxide)
20V
700mA (Ta)
1.5V, 4.5V
1V @ 250µA
850nC @ 4.5V
62.5pF @ 10V
±8V
-
900mW (Ta)
275 mOhm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-DFN (1.0 x 0.60)
3-UFDFN
IXFP8N85X
IXYS

MOSFET N-CH 850V 8A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB (IXFP)
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,432
MOSFET (Metal Oxide)
850V
8A (Tc)
10V
5.5V @ 250µA
17nC @ 10V
654pF @ 25V
±30V
-
200W (Tc)
850 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB (IXFP)
TO-220-3
FCH110N65F_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
패키지: TO-247-3
재고8,112
MOSFET (Metal Oxide)
650V
35A (Tc)
10V
5V @ 3.5mA
145nC @ 10V
4895pF @ 100V
±20V
-
357W (Tc)
110 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STL120N2VH5
STMicroelectronics

MOSFET N-CH 20V 120A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 14A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: 8-PowerSMD, Flat Leads
재고7,792
MOSFET (Metal Oxide)
20V
120A (Tc)
2.5V, 4.5V
700mV @ 250µA
29nC @ 2.5V
4660pF @ 15V
±8V
-
80W (Tc)
3 mOhm @ 14A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
hot RTF015N03TL
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고769,380
MOSFET (Metal Oxide)
30V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
±12V
-
320mW (Ta)
240 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot STW25N80K5
STMicroelectronics

MOSFET N-CH 800V 19.5A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고5,312
MOSFET (Metal Oxide)
800V
19.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1600pF @ 100V
±30V
-
250W (Tc)
260 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FDP054N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V TO-220AB-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13280pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고9,960
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4.5V @ 250µA
203nC @ 10V
13280pF @ 25V
±20V
-
263W (Tc)
5.5 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
MMFTP3008K-AQ
Diotec Semiconductor

IC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
360mA (Ta)
1.8V, 4.5V
1V @ 250µA
1.22 nC @ 4.5 V
50 pF @ 10 V
±10V
-
500mW (Ta)
2.5Ohm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TK750A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,610
MOSFET (Metal Oxide)
600 V
10A (Ta)
10V
4V @ 1mA
30 nC @ 10 V
1130 pF @ 300 V
±30V
-
40W (Tc)
750mOhm @ 5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J375F-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -20V -2A SOT346

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고37,518
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
+6V, -8V
-
600mW (Ta)
150mOhm @ 1A, 4.5V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
MMFTP332
Diotec Semiconductor

IC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
1A (Ta)
2.7V, 4.5V
1V @ 250µA
4 nC @ 10 V
200 pF @ 20 V
±8V
-
500mW (Ta)
300mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
BTS131E3045ANTMA1
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 75W
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
Request a Quote
MOSFET (Metal Oxide)
50 V
25A (Tc)
4.5V
2.5V @ 1mA
-
1400 pF @ 25 V
±10V
-
75W
60mOhm @ 12A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH1605
IXYS

MOSFET N-CH 16A TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SJ302-Z-AZ
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-