이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 75V 80A TO-220
|
패키지: TO-220-3 |
재고108,132 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 6130pF @ 25V | ±20V | - | 300W (Tc) | 7.4 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220AB
|
패키지: TO-220-3 |
재고6,112 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 80µA | 68nC @ 10V | 2530pF @ 25V | ±20V | - | 150W (Tc) | 6.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A SOP-8 ADV
|
패키지: 8-PowerVDFN |
재고3,120 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | ±20V | - | 1.6W (Ta), 30W (Tc) | 11 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 20V 2.6A 6-WDFN
|
패키지: 6-WDFN Exposed Pad |
재고2,016 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 3.7nC @ 4.5V | 271pF @ 10V | ±12V | Schottky Diode (Isolated) | 700mW (Ta) | 65 mOhm @ 3.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH 200V 100A T-MAX
|
패키지: TO-247-3 Variant |
재고4,672 |
|
MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | ±30V | - | 520W (Tc) | 22 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
ON Semiconductor |
MOSFET N-CH 20V 2.5A CHIPFET
|
패키지: 8-SMD, Flat Lead |
재고36,000 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | 465pF @ 16V | ±8V | - | 640mW (Ta) | 65 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 4.4A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고7,248 |
|
MOSFET (Metal Oxide) | 300V | 4.4A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 900 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB
|
패키지: TO-220-3 |
재고16,800 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4.5V @ 250µA | 17nC @ 10V | 340pF @ 25V | ±30V | - | 50W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 3A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고180,036 |
|
MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 324pF @ 25V | ±30V | - | 42W (Tc) | 1.5 Ohm @ 1.5A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 16A TO-220FP
|
패키지: TO-220-3 Full Pack |
재고3,488 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | ±20V | - | 34W (Tc) | 60 mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 200V 43A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,408 |
|
MOSFET (Metal Oxide) | 200V | 43A (Tc) | 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | ±20V | - | 3.8W (Ta), 300W (Tc) | 54 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N CH 60V 56A I-PAK
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고2,240 |
|
MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 3.7V @ 100µA | 87nC @ 10V | 3020pF @ 25V | ±20V | - | 99W (Tc) | 7.9 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 300V 138A SOT-227B
|
패키지: SOT-227-4, miniBLOC |
재고3,936 |
|
MOSFET (Metal Oxide) | 300V | 138A | 10V | 4.5V @ 1mA | 258nC @ 10V | 20000pF @ 25V | ±20V | - | 890W (Tc) | 18 mOhm @ 85A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 500V 60A TO-240AA
|
패키지: TO-240AA |
재고3,056 |
|
MOSFET (Metal Oxide) | 500V | 60A | 10V | 4V @ 24mA | 405nC @ 10V | 12600pF @ 25V | ±20V | - | 590W (Tc) | 75 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | TO-240AA | TO-240AA |
||
IXYS |
MOSFET N-CH 500V 24A TO-3P
|
패키지: TO-3P-3, SC-65-3 |
재고3,264 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 620V 6A TO-251
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고5,440 |
|
MOSFET (Metal Oxide) | 620V | 6A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 578pF @ 100V | ±30V | - | 78W (Tc) | 900 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Rohm Semiconductor |
MOSFET N-CH 30V 10A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고122,004 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 2.5V @ 1mA | 14nC @ 5V | 1070pF @ 10V | 20V | - | 2W (Ta) | 13 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
패키지: TO-220-3 Full Pack |
재고2,336 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 250µA | 33nC @ 10V | 1652pF @ 50V | ±30V | - | 45W (Tc) | 750 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고7,584 |
|
MOSFET (Metal Oxide) | 700V | 3.3A (Tc) | 10V | 4V @ 250µA | 7.7nC @ 10V | 370pF @ 100V | ±30V | - | 38W (Tc) | 1.4 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Microsemi Corporation |
MOSFET N-CH 1000V 25A SOT-227
|
패키지: SOT-227-4, miniBLOC |
재고2,160 |
|
MOSFET (Metal Oxide) | 1000V | 25A | 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | ±30V | - | 545W (Tc) | 330 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET N-CH 100V 19.7A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고30,000 |
|
MOSFET (Metal Oxide) | 100V | 19.7A (Tc) | 6V, 10V | 3.3V @ 250µA | 69nC @ 10V | 2410pF @ 50V | ±20V | - | 3.5W (Ta), 7.8W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
PSMN1R7-25YLD/LFPAK/REEL 7 Q1
|
패키지: SC-100, SOT-669 |
재고6,848 |
|
MOSFET (Metal Oxide) | 25V | 100A | 4.5V, 10V | 2.2V @ 1mA | 46.7nC @ 10V | 3415pF @ 12V | ±20V | Schottky Diode (Body) | 135W (Tc) | 1.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Diodes Incorporated |
MOSFET N-CH 30V 3.2A SOT-26
|
패키지: SOT-23-6 |
재고355,776 |
|
MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | - | 476pF @ 15V | ±8V | - | 900mW (Ta) | 60 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 15A TO-220FM
|
패키지: TO-220-2 Full Pack |
재고13,860 |
|
MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 4.5V @ 1mA | 50nC @ 10V | 1700pF @ 25V | ±30V | - | 50W (Tc) | 300 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 1.9A SOT23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고2,304 |
|
MOSFET (Metal Oxide) | 30V | 1.9A (Tc) | 5V, 10V | 2V @ 1mA | 10nC @ 10V | 190pF @ 10V | ±20V | - | 830mW (Tc) | 120 mOhm @ 1A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Sanken |
MOSFET N-CH 40V 14A 8DFN
|
패키지: 8-PowerTDFN |
재고2,032 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 2.5V @ 650µA | 35.3nC @ 10V | 2410pF @ 25V | ±20V | - | 3.1W (Ta), 59W (Tc) | 5 mOhm @ 35.4A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 40V TO220AB
|
패키지: TO-220-3 |
재고20,892 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 1mA | 71nC @ 10V | 4491pF @ 20V | ±20V | - | 211W (Tc) | 2.8 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 47A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고103,740 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 4V @ 1mA | 66nC @ 10V | 3100pF @ 25V | ±20V | - | 166W (Tc) | 28 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 250V 360MA SOT-89
|
패키지: TO-243AA |
재고350,388 |
|
MOSFET (Metal Oxide) | 250V | 360mA (Ta) | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.1W (Ta) | 4 Ohm @ 200mA, 0V | -55°C ~ 125°C (TA) | Surface Mount | SOT-89-3 | TO-243AA |
||
Diodes Incorporated |
MOSFET N-CH 60V 310MA SOT23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고252,420 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 5V, 10V | 2V @ 250µA | 0.87nC @ 10V | 22pF @ 25V | ±20V | - | 370mW (Ta) | 3 Ohm @ 115mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |