이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고4,048 |
|
MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 110W (Tc) | 295 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET
|
패키지: DirectFET? Isometric S1 |
재고63,216 |
|
MOSFET (Metal Oxide) | 25V | 12A (Ta), 37A (Tc) | 4.5V, 10V | 2.4V @ 25µA | 13nC @ 4.5V | 1190pF @ 13V | ±20V | - | 1.8W (Ta), 15W (Tc) | 5.9 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET? Isometric S1 |
||
Infineon Technologies |
MOSFET N-CH 49V 80A TO220-7
|
패키지: TO-220-7 (Formed Leads) |
재고7,920 |
|
MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 2V @ 240µA | 232nC @ 10V | 4800pF @ 25V | ±20V | Temperature Sensing Diode | 300W (Tc) | 6.5 mOhm @ 36A, 10V | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-7 | TO-220-7 (Formed Leads) |
||
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고6,592 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 54A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,368 |
|
MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | - | 44nC @ 4.5V | 2300pF @ 25V | ±16V | - | - | 14 mOhm @ 32A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 9.7A TO-262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고3,456 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 3.8W (Ta), 48W (Tc) | 200 mOhm @ 5.7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고12,348 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | ±16V | - | 107W (Tc) | 19 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CH 40V 50MA TO-72
|
패키지: TO-206AF, TO-72-4 Metal Can |
재고4,912 |
|
MOSFET (Metal Oxide) | 40V | 50mA (Ta) | 20V | 5V @ 10µA | - | 3.5pF @ 15V | ±30V | - | 375mW (Ta) | 250 Ohm @ 100µA, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
||
ON Semiconductor |
MOSFET N-CH 60V 37A 8DFN
|
패키지: 8-PowerWDFN |
재고7,232 |
|
MOSFET (Metal Oxide) | 60V | 11A (Ta), 37A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 28nC @ 10V | 1462pF @ 25V | ±20V | - | 2.7W (Ta), 33W (Tc) | 11.5 mOhm @ 8.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 16.7A TO-220F
|
패키지: TO-220-3 Full Pack |
재고4,480 |
|
MOSFET (Metal Oxide) | 150V | 16.7A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1600pF @ 25V | ±25V | - | 60W (Tc) | 90 mOhm @ 8.35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 500V 370MA 4-DIP
|
패키지: 4-DIP (0.300", 7.62mm) |
재고3,488 |
|
MOSFET (Metal Oxide) | 500V | 370mA (Ta) | 10V | 4V @ 250µA | 24nC @ 10V | 360pF @ 25V | ±20V | - | 1W (Ta) | 3 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 60V 600MA 4-DIP
|
패키지: 4-DIP (0.300", 7.62mm) |
재고13,380 |
|
MOSFET (Metal Oxide) | 60V | 600mA (Ta) | - | - | 15nC @ 15V | 250pF @ 25V | - | - | - | 1.6 Ohm @ 300mA, 10V | - | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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ON Semiconductor |
MOSFET N-CH 600V 6.8A IPAK-4
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고3,232 |
|
MOSFET (Metal Oxide) | 600V | 6.6A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 440pF @ 50V | ±25V | - | 84W (Tc) | 745 mOhm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
패키지: 8-PowerTDFN |
재고5,920 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 23nC @ 10V | 1300pF @ 20V | ±20V | - | 3.6W (Ta), 50W (Tc) | 4.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Nexperia USA Inc. |
NX138BK/SOT23/TO-236AB
|
패키지: - |
재고4,448 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 650V 11A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고492,672 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 1000pF @ 25V | ±30V | - | 160W (Tc) | 450 mOhm @ 5.5A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 800V 3A IPAK
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고7,952 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 5V @ 100µA | 10.5nC @ 10V | 175pF @ 100V | ±30V | - | 60W (Tc) | 2.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 25V 60A 1212-8
|
패키지: PowerPAK? 1212-8 |
재고4,144 |
|
MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 2V @ 250µA | 35nC @ 4.5V | 3640pF @ 10V | +20V, -16V | - | 57W (Tc) | 1.52 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,944 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3V @ 250µA | 214nC @ 10V | 12585pF @ 15V | ±20V | - | 254W (Tc) | 2.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 40V 120A H2PAK-2
|
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant |
재고3,104 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4.5V @ 250µA | 130nC @ 10V | 7735pF @ 20V | ±20V | - | 150W (Tc) | 2.4 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D2Pak (2 Leads + Tab) Variant |
||
Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP
|
패키지: TO-220-3 Full Pack, Isolated Tab |
재고24,000 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 5V | 2V @ 250µA | 35nC @ 5V | 1600pF @ 25V | ±10V | - | 42W (Tc) | 50 mOhm @ 12A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 600V TO-220
|
패키지: TO-220-3 |
재고8,820 |
|
MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 4V @ 250µA | 8nC @ 10V | 232pF @ 100V | ±25V | - | 60W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 54A TO247
|
패키지: TO-247-3 |
재고8,508 |
|
MOSFET (Metal Oxide) | 650V | 54A (Tc) | 10V | 5V @ 250µA | 164nC @ 10V | 7162pF @ 25V | ±20V | - | 481W (Tc) | 77 mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 20A TO-3PN
|
패키지: TO-3P-3, SC-65-3 |
재고92,760 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | ±30V | - | 208W (Tc) | 190 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 25.4A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고1,300,212 |
|
MOSFET (Metal Oxide) | 30V | 25.4A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 54nC @ 10V | 2071pF @ 15V | ±20V | - | 2.5W (Ta), 5.7W (Tc) | 4.9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 9A TO252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고7,088 |
|
MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 4.5V @ 250µA | 24nC @ 10V | 1160pF @ 25V | ±30V | - | 178W (Tc) | 860 mOhm @ 4.5A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 20V 8A 6-TSOP
|
패키지: SOT-23-6 Thin, TSOT-23-6 |
재고591,552 |
|
MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 43.5nC @ 5V | 1805pF @ 10V | ±8V | - | 2.08W (Ta), 2.97W (Tc) | 27.5 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET N-CH 30V 17.1A VDFN30308
|
패키지: 8-PowerWDFN |
재고2,000 |
|
MOSFET (Metal Oxide) | 30V | 17.1A (Ta), 46.2A (Tc) | 4.5V, 10V | 3V @ 250µA | 22.6nC @ 10V | 1320pF @ 15V | ±20V | - | 1.1W (Ta) | 6.5 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3030-8 | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A T0247
|
패키지: TO-247-3 |
재고7,416 |
|
MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | ±30V | - | 165W (Tc) | 200 mOhm @ 8.7A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 20A TO-220FM
|
패키지: TO-220-2 Full Pack |
재고4,016 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4.5V @ 1mA | 65nC @ 10V | 2040pF @ 25V | ±30V | - | 50W (Tc) | 220 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |