이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 500V 6A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고390,000 |
|
MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 5V @ 250µA | 34nC @ 10V | 1346pF @ 25V | ±20V | - | 119W (Tc) | 1.3 Ohm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 25V 50A IPAK
|
패키지: TO-251-3 Stub Leads, IPak |
재고3,232 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 50µA | 25nC @ 5V | 3110pF @ 15V | ±20V | - | 94W (Tc) | 5.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고2,976 |
|
MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 2.4V @ 26µA | 2.9nC @ 5V | 44pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 3.5 Ohm @ 160mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 35A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고435,816 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | - | 65nC @ 10V | 1570pF @ 25V | ±20V | - | 150W (Tc) | 44 mOhm @ 26.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 29A TO-262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고7,424 |
|
MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 3.8W (Ta), 68W (Tc) | 40 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET P-CH 20V 8.2A UDFN
|
패키지: 6-UDFN Exposed Pad |
재고2,336 |
|
MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | - | 18 mOhm @ 7A, 4.5V | - | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 20V 24.4A TO252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고120,012 |
|
MOSFET (Metal Oxide) | 20V | 24.4A (Ta), 40A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 6520pF @ 10V | ±20V | - | 3.3W (Ta), 79W (Tc) | 3.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 8A 8-WDFN
|
패키지: 8-PowerWDFN |
재고2,896 |
|
MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 850pF @ 25V | ±20V | - | 3.1W (Ta), 19W (Tc) | 24 mOhm @ 7.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고19,200 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 360pF @ 25V | ±20V | - | 3.1W (Ta), 50W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고2,032 |
|
MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 68nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 125W (Tc) | 280 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 700V COOLMOS TO220-3
|
패키지: TO-220-3 Full Pack |
재고2,368 |
|
MOSFET (Metal Oxide) | 700V | 10.5A (Tc) | 10V | 3.5V @ 210µA | 22nC @ 10V | 474pF @ 100V | ±20V | - | 86W (Tc) | 600 mOhm @ 1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO252 | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 20V 100A TDSON-8
|
패키지: 8-PowerTDFN |
재고5,808 |
|
MOSFET (Metal Oxide) | 20V | 30A (Ta), 100A (Tc) | 2.5V, 4.5V | 1.2V @ 350µA | 85nC @ 4.5V | 13000pF @ 10V | ±12V | - | 2.8W (Ta), 104W (Tc) | 1.95 mOhm @ 50A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET P-CH TO263-3
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고2,928 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 120µA | 92nC @ 10V | 5430pF @ 25V | ±16V | - | 75W (Tc) | 7.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 28A ISOPLUS220
|
패키지: ISOPLUS220? |
재고2,992 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 3.9V @ 2mA | 230nC @ 10V | 4800pF @ 25V | ±20V | Super Junction | - | 95 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고3,440 |
|
MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 4V @ 250µA | 128nC @ 10V | 8400pF @ 25V | ±20V | - | 3.9W (Ta), 200W (Tc) | 0.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
ON Semiconductor |
MOSFET N-CH 30V 49A SO8FL
|
패키지: 8-PowerTDFN |
재고6,112 |
|
MOSFET (Metal Oxide) | 30V | 49A (Ta), 319A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 139nC @ 10V | 10144pF @ 15V | ±20V | - | 3.84W (Ta), 161W (Tc) | 0.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3
|
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
재고6,480 |
|
MOSFET (Metal Oxide) | 500V | 50mA (Tj) | 5V, 10V | 4V @ 1mA | - | 55pF @ 25V | ±20V | - | 1W (Tc) | 60 Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
ON Semiconductor |
MOSFET N-CH 30V 9A SO-8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고81,048 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 44A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.3nC @ 10V | 1004pF @ 15V | ±20V | - | 920mW (Ta), 21.6W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
IXYS |
2500V TO 4500V VERY HI VOLT PWR
|
패키지: TO-247-3 Variant |
재고5,056 |
|
MOSFET (Metal Oxide) | 4500V | 1.4A (Tc) | 10V | 6V @ 250µA | 88nC @ 10V | 3300pF @ 25V | ±20V | - | 960W (Tc) | 40 Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A TSM
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고7,824 |
|
MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 19nC @ 4.5V | 1170pF @ 10V | ±8V | - | 700mW (Ta) | 31 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7.8A IPAK
|
패키지: TO-251-3 Stub Leads, IPak |
재고11,808 |
|
MOSFET (Metal Oxide) | 650V | 7.8A (Ta) | 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | ±30V | - | 80W (Tc) | 670 mOhm @ 3.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 150V 41A TO-220AB
|
패키지: TO-220-3 |
재고15,084 |
|
MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | ±30V | - | 200W (Tc) | 45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 500V 11A TO220
|
패키지: TO-220-2 Full Pack |
재고10,056 |
|
MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 4.5V @ 1mA | 30nC @ 10V | 1000pF @ 25V | ±30V | - | 50W (Tc) | 500 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 40V 23A WDFN8
|
패키지: 8-PowerWDFN |
재고2,432 |
|
MOSFET (Metal Oxide) | 40V | 23A (Ta), 107A (Tc) | 4.5V, 10V | 2V @ 63µA | 35nC @ 10V | 2100pF @ 25V | ±20V | - | 3.3W (Ta), 68W (Tc) | 3 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A CST3
|
패키지: SC-101, SOT-883 |
재고2,144 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | - | - | 9.1pF @ 3V | ±20V | - | 100mW (Ta) | 12 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
||
STMicroelectronics |
MOSFET N-CH 650V 15A I2PAK-FP
|
패키지: TO-262-3 Full Pack, I2Pak |
재고13,032 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1280pF @ 50V | ±25V | - | 30W (Tc) | 270 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
Diodes Incorporated |
MOSFET N-CH 30V 11A POWERDI
|
패키지: 8-PowerWDFN |
재고20,790 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta), 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 37nC @ 10V | 2075pF @ 15V | ±20V | - | 900mW (Ta) | 8.5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 150V 25A TO252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고132,372 |
|
MOSFET (Metal Oxide) | 150V | 25A (Tc) | 6V, 10V | 4V @ 250µA | 40nC @ 10V | 1725pF @ 25V | ±20V | - | 3W (Ta), 136W (Tc) | 52 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 0.2A EMT3
|
패키지: SC-75, SOT-416 |
재고3,873,168 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | 115pF @ 10V | ±10V | - | 150mW (Ta) | 1.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
||
Diodes Incorporated |
MOSFET N-CH 20V 200MA 3-DFN
|
패키지: 3-XFDFN |
재고384,492 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4V | 900mV @ 100µA | - | 41pF @ 3V | ±10V | - | 400mW (Ta) | 1.5 Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |