이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A I2PAK
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고7,616 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 7530pF @ 25V | ±20V | - | 300W (Tc) | 4.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 250V 2.2A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고94,200 |
|
MOSFET (Metal Oxide) | 250V | 2.2A (Ta) | 10V | 5.5V @ 250µA | 38nC @ 10V | 930pF @ 25V | ±30V | - | 2.5W (Ta) | 230 mOhm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B
|
패키지: 8-SOIC (0.173", 4.40mm Width) |
재고7,248 |
|
MOSFET (Metal Oxide) | 40V | 7.5A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 11nC @ 10V | 650pF @ 10V | ±20V | - | 1W (Ta) | 27 mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 6.3A TO-3P
|
패키지: TO-3P-3, SC-65-3 |
재고7,200 |
|
MOSFET (Metal Oxide) | 800V | 6.3A (Tc) | 10V | 5V @ 250µA | 31nC @ 10V | 1500pF @ 25V | ±30V | - | 185W (Tc) | 1.95 Ohm @ 3.15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 28A POWER56
|
패키지: 8-PowerTDFN |
재고5,808 |
|
MOSFET (Metal Oxide) | 30V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 250µA | 100nC @ 10V | 6420pF @ 15V | ±20V | - | 2.5W (Ta), 83W (Tc) | 2 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 75V 250A TO-247
|
패키지: TO-247-3 |
재고3,872 |
|
MOSFET (Metal Oxide) | 75V | 250A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 550W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 2.4A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고3,168 |
|
MOSFET (Metal Oxide) | 200V | 2.4A (Tc) | 10V | 5V @ 250µA | 8nC @ 10V | 250pF @ 25V | ±30V | - | 2.5W (Ta), 37W (Tc) | 2.7 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB
|
패키지: TO-220-3 |
재고6,624 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1030pF @ 25V | ±30V | - | 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 21A POWERFLAT
|
패키지: 8-PowerVDFN |
재고9,564 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 1V @ 250µA | 17nC @ 4.5V | 1690pF @ 25V | ±20V | - | 60W (Tc) | 5.2 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 40V 8TDSON
|
패키지: 8-PowerTDFN |
재고2,848 |
|
MOSFET (Metal Oxide) | 40V | 70A (Tc) | 7V, 10V | 3.4V @ 17µA | 24.2nC @ 10V | 1430pF @ 25V | ±20V | - | 50W (Tc) | 4.6 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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GeneSiC Semiconductor |
TRANS SJT 1.7KV 100A
|
패키지: TO-247-3 |
재고6,864 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 100A (Tc) | - | - | - | - | - | - | 583W (Tc) | 25 mOhm @ 50A | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 82A TO-264
|
패키지: TO-264-3, TO-264AA |
재고6,832 |
|
MOSFET (Metal Oxide) | 250V | 82A (Tc) | 10V | 5V @ 250µA | 142nC @ 10V | 4800pF @ 25V | ±20V | - | 500W (Tc) | 35 mOhm @ 41A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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ON Semiconductor |
MOSFET N-CH 100V 132A SO8FL
|
패키지: 8-PowerTDFN |
재고3,728 |
|
MOSFET (Metal Oxide) | 100V | - | 10V | 4V @ 250µA | 58nC @ 10V | 4200pF @ 50V | ±16V | - | 3.9W (Ta), 198W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 60V 8A TO263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고5,104 |
|
MOSFET (Metal Oxide) | 60V | 8A (Ta), 78A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100nC @ 10V | 6400pF @ 30V | ±20V | - | 2.1W (Ta), 187W (Tc) | 16.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 12V 11A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,640 |
|
MOSFET (Metal Oxide) | 12V | 11A (Ta) | 2.5V, 4.5V | 600mV @ 250µA (Min) | 30nC @ 4.5V | - | ±8V | - | 1.6W (Ta) | 5.5 mOhm @ 17A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고5,904 |
|
MOSFET (Metal Oxide) | 40V | 29A (Ta), 130A (Tc) | 4.5V, 10V | 2V @ 250µA | 50nC @ 10V | 3100pF @ 25V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -20V,
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고6,432 |
|
MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 2.5V, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 447pF @ 6V | ±8V | - | 900mW (Ta) | 130 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V LFPAK
|
패키지: SC-100, SOT-669 |
재고7,888 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 87nC @ 10V | 5217pF @ 15V | ±20V | - | 272W (Tc) | 2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 47A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고5,744 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 4V @ 1mA | - | 3100pF @ 25V | ±20V | - | 166W (Tc) | 28 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 20V 9A 6UDFN
|
패키지: 6-UDFN Exposed Pad |
재고2,832 |
|
MOSFET (Metal Oxide) | 20V | 9A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 59nC @ 8V | 2760pF @ 15V | ±8V | - | 730mW (Ta) | 16 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 30V 8.7A PWRDI3333-8
|
패키지: 8-PowerWDFN |
재고6,000 |
|
MOSFET (Metal Oxide) | 30V | 8.7A (Ta) | 5V, 10V | 2.5V @ 250µA | 16.5nC @ 10V | 1931pF @ 15V | ±25V | - | 950mW (Ta) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Rohm Semiconductor |
NCH 600V 15A POWER MOSFET
|
패키지: TO-220-3 |
재고17,328 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 5V @ 1mA | 27.5nC @ 10V | 1050pF @ 25V | ±20V | - | 60W (Tc) | 290 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고3,408 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 154nC @ 10V | 10300pF @ 25V | ±20V | - | 125W (Tc) | 4.7 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
패키지: PowerPAK? SO-8 |
재고36,000 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 77nC @ 10V | 3595pF @ 15V | +20V, -16V | - | 5W (Ta), 62.5W (Tc) | 2.15 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET P-CH 20V 40A PPAK SO-8
|
패키지: PowerPAK? SO-8 |
재고108,000 |
|
MOSFET (Metal Oxide) | 20V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 143nC @ 10V | 4595pF @ 10V | ±16V | - | 5W (Ta), 54W (Tc) | 4.9 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Diodes Incorporated |
MOSFET N-CH 30V 0.55A DMN3900
|
패키지: 3-XFDFN |
재고3,872 |
|
MOSFET (Metal Oxide) | 30V | 550mA (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 0.7nC @ 4.5V | 42.2pF @ 25V | ±8V | - | 390mW (Ta) | 760 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Infineon Technologies |
MOSFET N-CH 30V 210A TO-220AB
|
패키지: TO-220-3 |
재고6,080 |
|
MOSFET (Metal Oxide) | 30V | 210A (Tc) | 7V, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | ±20V | - | 3.8W (Ta), 230W (Tc) | 2.8 mOhm @ 76A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 9A TO-220
|
패키지: TO-220-3 |
재고390,000 |
|
MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 547pF @ 50V | ±25V | - | 70W (Tc) | 470 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 28A
|
패키지: TO-220-3 Full Pack |
재고18,528 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 5V @ 250µA | 54nC @ 10V | 2400pF @ 100V | ±25V | - | 40W (Tc) | 110 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON
|
패키지: 8-PowerVDFN |
재고51,828 |
|
MOSFET (Metal Oxide) | 80V | 18A (Tc) | 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | ±20V | - | 700mW (Ta), 42W (Tc) | 13.3 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |