페이지 41 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7751TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고31,176	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF7752GTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 4.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,920	Logic Level Gate	30V	4.6A	30 mOhm @ 4.6A, 10V	2V @ 250µA	9nC @ 4.5V	861pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
VEC2616-TL-H-Z	ON Semiconductor	MOSFET N/P-CH 60V 3A/2.5A VEC8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	패키지: 8-SMD, Flat Lead	재고3,376	Logic Level Gate, 4V Drive	60V	3A, 2.5A	80 mOhm @ 1.5A, 10V	-	10nC @ 10V	505pF @ 20V	1W	-	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
UPA2670T1R-E2-AX	Renesas Electronics America	MOSFET 2P-CH 20V 3A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	패키지: 6-WFDFN Exposed Pad	재고5,232	Logic Level Gate, 1.8V Drive	20V	3A	79 mOhm @ 1.5A, 4.5V	-	5.1nC @ 4.5V	473pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
NTLGD3502NT1G	ON Semiconductor	MOSFET 2N-CH 20V 4.3A/3.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.74W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (3x3)	패키지: 6-VDFN Exposed Pad	재고15,468	Logic Level Gate	20V	4.3A, 3.6A	60 mOhm @ 4.3A, 4.5V	2V @ 250µA	4nC @ 4.5V	480pF @ 10V	1.74W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (3x3)
GWM160-0055X1-SMDSAM	IXYS	MOSFET 6N-CH 55V 150A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Gull Wing	재고2,544	Standard	55V	150A	3.3 mOhm @ 100A, 10V	4.5V @ 1mA	105nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
SI3981DV-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 1.6A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고1,401,540	Logic Level Gate	20V	1.6A	185 mOhm @ 1.9A, 4.5V	1.1V @ 250µA	5nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
ZXMC4A16DN8TC	Diodes Incorporated	MOSFET N/P-CH 40V 4A/3.6A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고447,012	Logic Level Gate	40V	4A, 3.6A	50 mOhm @ 4.5A, 10V	1V @ 250mA (Min)	17nC @ 10V	770pF @ 40V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NDS9956A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고296,220	Logic Level Gate	30V	3.7A	80 mOhm @ 2.2A, 10V	2.8V @ 250µA	27nC @ 10V	320pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS3C2F100	STMicroelectronics	MOSFET N/P-CH 100V 3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,360	Logic Level Gate	100V	3A	145 mOhm @ 1.5A, 10V	2V @ 250µA	20nC @ 10V	460pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTSM120AM25CT3AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 148A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V Power - Max: 937W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고4,944	Silicon Carbide (SiC)	1200V (1.2kV)	148A (Tc)	25 mOhm @ 80A, 20V	3V @ 4mA	544nC @ 20V	10200pF @ 1000V	937W	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTML602U12R020T3AG	Microsemi Corporation	MOSFET 2N-CH 600V 45A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고4,816	Standard	600V	45A	150 mOhm @ 22.5A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM20DHM08G	Microsemi Corporation	MOSFET 2N-CH 200V 208A SP6 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고3,376	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50HM75FTG	Microsemi Corporation	MOSFET 4N-CH 500V 46A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고2,464	Standard	500V	46A	90 mOhm @ 23A, 10V	5V @ 2.5mA	123nC @ 10V	5600pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
GWM120-0075P3-SMD SAM	IXYS	MOSFET 6N-CH 75V 118A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 118A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Gull Wing	재고6,944	Standard	75V	118A	5.5 mOhm @ 60A, 10V	4V @ 1mA	100nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
ALD1108EPCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V Power - Max: 600mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고7,888	Standard	10V	-	500 Ohm @ 5V	1.01V @ 1µA	-	25pF @ 5V	600mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
LN60A01EP-LF	Monolithic Power Systems Inc.	MOSFET 3N-CH 600V 0.08A 8DIP FET Type: 3 N-Channel, Common Gate FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -20°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고7,360	Standard	600V	80mA	190 Ohm @ 10mA, 10V	1.2V @ 250µA	-	-	1.3W	-20°C ~ 125°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI7923DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고197,484	Logic Level Gate	30V	4.3A	47 mOhm @ 6.4A, 10V	3V @ 250µA	21nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SQJ992EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고3,632	Standard	60V	15A	56.2 mOhm @ 3.7A, 10V	2.5V @ 250µA	12nC @ 10V	446pF @ 30V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTLLD4901NFTWG	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Power - Max: 800mW, 810mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	패키지: 8-PowerWDFN	재고3,456	Logic Level Gate	30V	5.5A, 6.3A	17.4 mOhm @ 9A, 10V	2.2V @ 250µA	12nC @ 10V	605pF @ 15V	800mW, 810mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
AO8810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고13,121,976	Logic Level Gate	20V	7A	20 mOhm @ 7A, 4.5V	1.1V @ 250µA	14nC @ 4.5V	1295pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4200DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,520	Logic Level Gate	25V	8A	25 mOhm @ 7.3A, 10V	2.2V @ 250µA	12nC @ 10V	415pF @ 13V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD110800APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고7,440	Standard	10.6V	-	500 Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
AUIRF7313QTR	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,360	Logic Level Gate	30V	6.9A	29 mOhm @ 6.9A, 10V	3V @ 250µA	33nC @ 10V	755pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMD8260L	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 6-MLP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	패키지: 12-PowerWDFN	재고7,616	Standard	60V	15A	5.8 mOhm @ 15A, 10V	3V @ 250µA	68nC @ 10V	5245pF @ 30V	1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
FDMS7608S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/15A 8-PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고3,703,812	Logic Level Gate	30V	12A, 15A	10 mOhm @ 12A, 10V	3V @ 250µA	24nC @ 10V	1510pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
DMP2100UFU-7	Diodes Incorporated	MOSFET 2P-CH 20V U-DFN2030-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	패키지: 6-UFDFN Exposed Pad	재고24,690	Standard	20V	5.7A	38 mOhm @ 3.5A, 10V	1.4V @ 250µA	21.4nC @ 10V	906pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
PMDXB1200UPEZ	Nexperia USA Inc.	MOSFET 2P-CH 30V 0.41A 6DFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V Power - Max: 285mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	패키지: 6-XFDFN Exposed Pad	재고96,450	Standard	30V	410mA	1.4 Ohm @ 410mA, 4.5V	950mV @ 250µA	1.2nC @ 4.5V	43.2pF @ 15V	285mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
DN2625DK6-G	Microchip Technology	MOSFET 2N-CH 250V 1.1A 8VDFN FET Type: 2 N-Channel (Dual) FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x5)	패키지: 8-VDFN Exposed Pad	재고17,076	Depletion Mode	250V	1.1A	3.5 Ohm @ 1A, 0V	-	7.04nC @ 1.5V	1000pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x5)
UM6K1NTN	Rohm Semiconductor	MOSFET 2N-CH 30V .1A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,766,380	Logic Level Gate	30V	100mA	8 Ohm @ 10mA, 4V	1.5V @ 100µA	-	13pF @ 5V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6

IRF7751TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고31,176

Logic Level Gate

30V

4.5A

35 mOhm @ 4.5A, 10V

2.5V @ 250µA

44nC @ 10V

1464pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF7752GTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,920

Logic Level Gate

30V

4.6A

30 mOhm @ 4.6A, 10V

2V @ 250µA

9nC @ 4.5V

861pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

VEC2616-TL-H-Z

ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

패키지: 8-SMD, Flat Lead

재고3,376

Logic Level Gate, 4V Drive

60V

3A, 2.5A

80 mOhm @ 1.5A, 10V

-

10nC @ 10V

505pF @ 20V

1W

-

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

UPA2670T1R-E2-AX

Renesas Electronics America

MOSFET 2P-CH 20V 3A 6HUSON

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V
Power - Max: 2.3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

패키지: 6-WFDFN Exposed Pad

재고5,232

Logic Level Gate, 1.8V Drive

20V

3A

79 mOhm @ 1.5A, 4.5V

-

5.1nC @ 4.5V

473pF @ 10V

2.3W

150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-HUSON (2x2)

NTLGD3502NT1G

ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.74W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (3x3)

패키지: 6-VDFN Exposed Pad

재고15,468

Logic Level Gate

20V

4.3A, 3.6A

60 mOhm @ 4.3A, 4.5V

2V @ 250µA

4nC @ 4.5V

480pF @ 10V

1.74W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-DFN (3x3)

GWM160-0055X1-SMDSAM

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Gull Wing

재고2,544

Standard

55V

150A

3.3 mOhm @ 100A, 10V

4.5V @ 1mA

105nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

SI3981DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 1.6A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고1,401,540

Logic Level Gate

20V

1.6A

185 mOhm @ 1.9A, 4.5V

1.1V @ 250µA

5nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

ZXMC4A16DN8TC

Diodes Incorporated

MOSFET N/P-CH 40V 4A/3.6A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고447,012

Logic Level Gate

40V

4A, 3.6A

50 mOhm @ 4.5A, 10V

1V @ 250mA (Min)

17nC @ 10V

770pF @ 40V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NDS9956A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고296,220

Logic Level Gate

30V

3.7A

80 mOhm @ 2.2A, 10V

2.8V @ 250µA

27nC @ 10V

320pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS3C2F100

STMicroelectronics

MOSFET N/P-CH 100V 3A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,360

Logic Level Gate

100V

3A

145 mOhm @ 1.5A, 10V

2V @ 250µA

20nC @ 10V

460pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTSM120AM25CT3AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 148A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 3V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V
Power - Max: 937W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고4,944

Silicon Carbide (SiC)

1200V (1.2kV)

148A (Tc)

25 mOhm @ 80A, 20V

3V @ 4mA

544nC @ 20V

10200pF @ 1000V

937W

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTML602U12R020T3AG

Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고4,816

Standard

600V

45A

150 mOhm @ 22.5A, 10V

4V @ 2.5mA

-

7600pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM20DHM08G

Microsemi Corporation

MOSFET 2N-CH 200V 208A SP6

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고3,376

Standard

200V

208A

10 mOhm @ 104A, 10V

5V @ 5mA

280nC @ 10V

14400pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50HM75FTG

Microsemi Corporation

MOSFET 4N-CH 500V 46A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고2,464

Standard

500V

46A

90 mOhm @ 23A, 10V

5V @ 2.5mA

123nC @ 10V

5600pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

GWM120-0075P3-SMD SAM

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Gull Wing

재고6,944

Standard

75V

118A

5.5 mOhm @ 60A, 10V

4V @ 1mA

100nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

ALD1108EPCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V
Power - Max: 600mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고7,888

Standard

10V

-

500 Ohm @ 5V

1.01V @ 1µA

-

25pF @ 5V

600mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

LN60A01EP-LF

Monolithic Power Systems Inc.

MOSFET 3N-CH 600V 0.08A 8DIP

FET Type: 3 N-Channel, Common Gate
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -20°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고7,360

Standard

600V

80mA

190 Ohm @ 10mA, 10V

1.2V @ 250µA

-

1.3W

-20°C ~ 125°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SI7923DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 4.3A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고197,484

Logic Level Gate

30V

4.3A

47 mOhm @ 6.4A, 10V

3V @ 250µA

21nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SQJ992EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고3,632

Standard

60V

15A

56.2 mOhm @ 3.7A, 10V

2.5V @ 250µA

12nC @ 10V

446pF @ 30V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTLLD4901NFTWG

ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Power - Max: 800mW, 810mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3x3)

패키지: 8-PowerWDFN

재고3,456

Logic Level Gate

30V

5.5A, 6.3A

17.4 mOhm @ 9A, 10V

2.2V @ 250µA

12nC @ 10V

605pF @ 15V

800mW, 810mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WDFN (3x3)

AO8810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고13,121,976

Logic Level Gate

20V

7A

20 mOhm @ 7A, 4.5V

1.1V @ 250µA

14nC @ 4.5V

1295pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4200DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,520

Logic Level Gate

25V

8A

25 mOhm @ 7.3A, 10V

2.2V @ 250µA

12nC @ 10V

415pF @ 13V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ALD110800APCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고7,440

Standard

10.6V

-

500 Ohm @ 4V

10mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

AUIRF7313QTR

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,360

Logic Level Gate

30V

6.9A

29 mOhm @ 6.9A, 10V

3V @ 250µA

33nC @ 10V

755pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMD8260L

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 6-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

패키지: 12-PowerWDFN

재고7,616

Standard

60V

15A

5.8 mOhm @ 15A, 10V

3V @ 250µA

68nC @ 10V

5245pF @ 30V

1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

FDMS7608S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/15A 8-PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고3,703,812

Logic Level Gate

30V

12A, 15A

10 mOhm @ 12A, 10V

3V @ 250µA

24nC @ 10V

1510pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

DMP2100UFU-7

Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

패키지: 6-UFDFN Exposed Pad

재고24,690

Standard

20V

5.7A

38 mOhm @ 3.5A, 10V

1.4V @ 250µA

21.4nC @ 10V

906pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

PMDXB1200UPEZ

Nexperia USA Inc.

MOSFET 2P-CH 30V 0.41A 6DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
Power - Max: 285mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

패키지: 6-XFDFN Exposed Pad

재고96,450

Standard

30V

410mA

1.4 Ohm @ 410mA, 4.5V

950mV @ 250µA

1.2nC @ 4.5V

43.2pF @ 15V

285mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

DN2625DK6-G

Microchip Technology

MOSFET 2N-CH 250V 1.1A 8VDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x5)

패키지: 8-VDFN Exposed Pad

재고17,076

Depletion Mode

250V

1.1A

3.5 Ohm @ 1A, 0V

-

7.04nC @ 1.5V

1000pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x5)

UM6K1NTN

Rohm Semiconductor

MOSFET 2N-CH 30V .1A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,766,380

Logic Level Gate

30V

100mA

8 Ohm @ 10mA, 4V

1.5V @ 100µA

-

13pF @ 5V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6