페이지 13 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF5852TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 2.7A 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고187,080	Logic Level Gate	20V	2.7A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
QJD1210SA2	Powerex Inc.	MOSFET 2N-CH 1200V 100A SIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 1.6V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V Power - Max: 415W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고6,704	Standard	1200V (1.2kV)	100A	17 mOhm @ 100A, 15V	1.6V @ 34mA	330nC @ 15V	8200pF @ 10V	415W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
PMGD175XN,115	NXP	MOSFET 2N-CH 30V 0.9A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고43,800	Logic Level Gate	30V	900mA	225 mOhm @ 1A, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	75pF @ 15V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
AON6973A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/30A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 30A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	패키지: 8-PowerVDFN	재고2,496	Logic Level Gate	30V	22A, 30A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	22nC @ 10V	1037pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
FW812-TL-E	ON Semiconductor	MOSFET 2N-CH 35V 10A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.173", 4.40mm Width)	재고7,712	Logic Level Gate	35V	10A	17 mOhm @ 10A, 10V	2.6V @ 1mA	19nC @ 10V	960pF @ 20V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
EMH2412-TL-H	ON Semiconductor	MOSFET 2N-CH 24V 6A EMH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	패키지: 8-SMD, Flat Lead	재고72,000	Logic Level Gate	24V	6A	27 mOhm @ 3A, 4.5V	-	6.3nC @ 4.5V	-	1.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
SI5905DC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 3A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고177,468	Logic Level Gate	8V	3A	90 mOhm @ 3A, 4.5V	450mV @ 250µA (Min)	9nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
GWM120-0075P3-SMD	IXYS	MOSFET 6N-CH 75V 118A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 118A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Gull Wing	재고3,392	Standard	75V	118A	5.5 mOhm @ 60A, 10V	4V @ 1mA	100nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
SI7958DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 7.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.2A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고15,876	Logic Level Gate	40V	7.2A	16.5 mOhm @ 11.3A, 10V	3V @ 250µA	75nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTLJD4150PTBG	ON Semiconductor	MOSFET 2P-CH 30V 1.8A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 135 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: 6-WDFN Exposed Pad	재고5,760	Logic Level Gate	30V	1.8A	135 mOhm @ 4A, 10V	2V @ 250µA	4.5nC @ 4.5V	300pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
ALD114935PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V Vgs(th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고3,248	Depletion Mode	10.6V	12mA, 3mA	540 Ohm @ 0V	3.45V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
NVMFD5875NLWFT1G	ON Semiconductor	MOSFET 2N-CH 60V 7A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	패키지: 8-PowerTDFN	재고3,712	Logic Level Gate	60V	7A	33 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFD5877NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	패키지: 8-PowerTDFN	재고3,968	Logic Level Gate	60V	6A	39 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
DMC3016LNS-7	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	패키지: 8-PowerVDFN	재고4,048	Standard	30V	9A (Ta), 6.8A (Ta)	16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V	2V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V, 1188pF @ 15V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
DMC3400SDW-13	Diodes Incorporated	MOSFET N/P-CH 30V SOT363 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고7,824	Standard	30V	650mA, 450mA	400 mOhm @ 590mA, 10V	1.6V @ 250µA	1.4nC @ 10V	55pF @ 15V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
IRLHS6276TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 4.5A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2)	패키지: 6-VQFN	재고39,000	Logic Level Gate	20V	4.5A	45 mOhm @ 3.4A, 4.5V	1.1V @ 10µA	3.1nC @ 4.5V	310pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-VQFN	6-PQFN (2x2)
ZXMN3AM832TA	Diodes Incorporated	MOSFET 2N-CH 30V 2.9A 8MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 1.13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)	패키지: 8-VDFN Exposed Pad	재고526,776	Logic Level Gate	30V	2.9A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.9nC @ 10V	190pF @ 25V	1.13W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x2)
DMN2019UTS-13	Diodes Incorporated	MOSFET 2N-CH 20V 5.4A TSSOP-8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 780mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,032	Logic Level Gate	20V	5.4A	18.5 mOhm @ 7A, 10V	950mV @ 250µA	8.8nC @ 4.5V	143pF @ 10V	780mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CMLDM7003 TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고28,920	Standard	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ZXMHC3A01T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고442,104	Logic Level Gate	30V	2.7A, 2A	120 mOhm @ 2.5A, 10V	3V @ 250µA	3.9nC @ 10V	190pF @ 25V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
FDG8842CZ	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V/25V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 25V Current - Continuous Drain (Id) @ 25°C: 750mA, 410mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고525,240	Logic Level Gate	30V, 25V	750mA, 410mA	400 mOhm @ 750mA, 4.5V	1.5V @ 250µA	1.44nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
PJT7601_R1_00001	Panjit International Inc.	MOSFET N/P-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고25,533	Logic Level Gate, 1.2V Drive	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V	1V @ 250µA	1.4nC @ 4.5V	67pF @ 10V, 38pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN2991UDJ-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.52A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: -	재고49,413	-	20V	520mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V	21.5pF @ 15V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
SSM6N815R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 2A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.8W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	Request a Quote	Logic Level Gate, 4V Drive	100V	2A (Ta)	103mOhm @ 2A, 10V	2.5V @ 100µA	3.1nC @ 4.5V	290pF @ 15V	1.8W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
PJL9824_R2_00001	Panjit International Inc.	MOSFET 2N-CH 40V 13A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	40V	13A (Ta)	5.5mOhm @ 10A, 10V	2.5V @ 250µA	25nC @ 4.5V	1258pF @ 25V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN3022LFG-7	Diodes Incorporated	MOSFET 2N-CH 30V 7.6A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Power - Max: 1.96W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	패키지: -	Request a Quote	-	30V	7.6A (Ta), 15A (Tc)	22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V	2.1V @ 250µA, 1.2V @ 250µA	3.7nC @ 4.5V, 8nC @ 4.5V	481pF @ 15V, 996pF @ 15V	1.96W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
HAT2038RWS-E	Renesas Electronics Corporation	MOSFET 2N-CH 60V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 3W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	Logic Level Gate, 4V Drive	60V	5A (Ta)	58mOhm @ 3A, 10V	2.2V @ 1mA	-	520pF @ 10V	3W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MSCSM120HM50CT3AG	Microchip Technology	SIC 4N-CH 1200V 55A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	패키지: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
AONX36324	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 21A/55A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	패키지: -	Request a Quote	-	30V	21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)	4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V	2.2V @ 250µA, 2.1V @ 250µA	25nC @ 10V, 50nC @ 10V	1145pF @ 15V, 2265pF @ 15V	3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
MSCSM170AM058CD3AG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고18	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-

IRF5852TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 2.7A 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고187,080

Logic Level Gate

20V

2.7A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

QJD1210SA2

Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 1.6V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V
Power - Max: 415W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고6,704

Standard

1200V (1.2kV)

100A

17 mOhm @ 100A, 15V

1.6V @ 34mA

330nC @ 15V

8200pF @ 10V

415W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

PMGD175XN,115

NXP

MOSFET 2N-CH 30V 0.9A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 900mA
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고43,800

Logic Level Gate

30V

900mA

225 mOhm @ 1A, 4.5V

1.5V @ 250µA

1.1nC @ 4.5V

75pF @ 15V

390mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

AON6973A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 30A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

패키지: 8-PowerVDFN

재고2,496

Logic Level Gate

30V

22A, 30A

5.2 mOhm @ 20A, 10V

2.2V @ 250µA

22nC @ 10V

1037pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

FW812-TL-E

ON Semiconductor

MOSFET 2N-CH 35V 10A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.173", 4.40mm Width)

재고7,712

Logic Level Gate

35V

10A

17 mOhm @ 10A, 10V

2.6V @ 1mA

19nC @ 10V

960pF @ 20V

2.5W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

EMH2412-TL-H

ON Semiconductor

MOSFET 2N-CH 24V 6A EMH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

패키지: 8-SMD, Flat Lead

재고72,000

Logic Level Gate

24V

6A

27 mOhm @ 3A, 4.5V

-

6.3nC @ 4.5V

-

1.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

SI5905DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 3A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고177,468

Logic Level Gate

8V

3A

90 mOhm @ 3A, 4.5V

450mV @ 250µA (Min)

9nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

GWM120-0075P3-SMD

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Gull Wing

재고3,392

Standard

75V

118A

5.5 mOhm @ 60A, 10V

4V @ 1mA

100nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

SI7958DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 7.2A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고15,876

Logic Level Gate

40V

7.2A

16.5 mOhm @ 11.3A, 10V

3V @ 250µA

75nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTLJD4150PTBG

ON Semiconductor

MOSFET 2P-CH 30V 1.8A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 135 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: 6-WDFN Exposed Pad

재고5,760

Logic Level Gate

30V

1.8A

135 mOhm @ 4A, 10V

2V @ 250µA

4.5nC @ 4.5V

300pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

ALD114935PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V
Vgs(th) (Max) @ Id: 3.45V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고3,248

Depletion Mode

10.6V

12mA, 3mA

540 Ohm @ 0V

3.45V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

NVMFD5875NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

패키지: 8-PowerTDFN

재고3,712

Logic Level Gate

60V

7A

33 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

NVMFD5877NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

패키지: 8-PowerTDFN

재고3,968

Logic Level Gate

60V

6A

39 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

DMC3016LNS-7

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Power - Max: 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

패키지: 8-PowerVDFN

재고4,048

Standard

30V

9A (Ta), 6.8A (Ta)

16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V

2V @ 250µA

9.5nC @ 4.5V

1184pF @ 15V, 1188pF @ 15V

1.3W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

DMC3400SDW-13

Diodes Incorporated

MOSFET N/P-CH 30V SOT363

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고7,824

Standard

30V

650mA, 450mA

400 mOhm @ 590mA, 10V

1.6V @ 250µA

1.4nC @ 10V

55pF @ 15V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

IRLHS6276TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VQFN
Supplier Device Package: 6-PQFN (2x2)

패키지: 6-VQFN

재고39,000

Logic Level Gate

20V

4.5A

45 mOhm @ 3.4A, 4.5V

1.1V @ 10µA

3.1nC @ 4.5V

310pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-VQFN

6-PQFN (2x2)

ZXMN3AM832TA

Diodes Incorporated

MOSFET 2N-CH 30V 2.9A 8MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Power - Max: 1.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)

패키지: 8-VDFN Exposed Pad

재고526,776

Logic Level Gate

30V

2.9A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.9nC @ 10V

190pF @ 25V

1.13W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x2)

DMN2019UTS-13

Diodes Incorporated

MOSFET 2N-CH 20V 5.4A TSSOP-8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,032

Logic Level Gate

20V

5.4A

18.5 mOhm @ 7A, 10V

950mV @ 250µA

8.8nC @ 4.5V

143pF @ 10V

780mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CMLDM7003 TR

Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고28,920

Standard

50V

280mA

2 Ohm @ 50mA, 5V

1V @ 250µA

0.76nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ZXMHC3A01T8TA

Diodes Incorporated

MOSFET 2N/2P-CH 30V 2.7A/2A SM8

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고442,104

Logic Level Gate

30V

2.7A, 2A

120 mOhm @ 2.5A, 10V

3V @ 250µA

3.9nC @ 10V

190pF @ 25V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

FDG8842CZ

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/25V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 750mA, 410mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고525,240

Logic Level Gate

30V, 25V

750mA, 410mA

400 mOhm @ 750mA, 4.5V

1.5V @ 250µA

1.44nC @ 4.5V

120pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

PJT7601_R1_00001

Panjit International Inc.

MOSFET N/P-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고25,533

Logic Level Gate, 1.2V Drive

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V

1V @ 250µA

1.4nC @ 4.5V

67pF @ 10V, 38pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN2991UDJ-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: -

재고49,413

-

20V

520mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V

21.5pF @ 15V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

SSM6N815R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 2A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 1.8W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

Request a Quote

Logic Level Gate, 4V Drive

100V

2A (Ta)

103mOhm @ 2A, 10V

2.5V @ 100µA

3.1nC @ 4.5V

290pF @ 15V

1.8W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

PJL9824_R2_00001

Panjit International Inc.

MOSFET 2N-CH 40V 13A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

40V

13A (Ta)

5.5mOhm @ 10A, 10V

2.5V @ 250µA

25nC @ 4.5V

1258pF @ 25V

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN3022LFG-7

Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Power - Max: 1.96W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

패키지: -

Request a Quote

-

30V

7.6A (Ta), 15A (Tc)

22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V

2.1V @ 250µA, 1.2V @ 250µA

3.7nC @ 4.5V, 8nC @ 4.5V

481pF @ 15V, 996pF @ 15V

1.96W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

HAT2038RWS-E

Renesas Electronics Corporation

MOSFET 2N-CH 60V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 3W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

Logic Level Gate, 4V Drive

60V

5A (Ta)

58mOhm @ 3A, 10V

2.2V @ 1mA

-

520pF @ 10V

3W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MSCSM120HM50CT3AG

Microchip Technology

SIC 4N-CH 1200V 55A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

패키지: -

Request a Quote

-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

AONX36324

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 21A/55A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V
Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

패키지: -

Request a Quote

-

30V

21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)

4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V

2.2V @ 250µA, 2.1V @ 250µA

25nC @ 10V, 50nC @ 10V

1145pF @ 15V, 2265pF @ 15V

3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

MSCSM170AM058CD3AG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1.642kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고18

-

1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1.642kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-