페이지 135 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-819
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - 양극(BJT) - 단일

기록 12,421
페이지  135/415
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC847BWE6433HTMA1
Infineon Technologies

TRANS NPN 45V 0.1A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고5,392
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
2SC3669-Y,T2PASF(M
Toshiba Semiconductor and Storage

TRANS NPN 2A 80V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
패키지: SC-71
재고4,448
2A
80V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
1W
100MHz
150°C (TJ)
Through Hole
SC-71
MSTM
BC860CW/ZLF
Nexperia USA Inc.

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
패키지: SC-70, SOT-323
재고5,760
-
-
-
-
-
-
-
-
Surface Mount
SC-70, SOT-323
SC-70-3
2SC2859-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN 30V 0.5A S-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고6,048
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 100mA, 1V
150mW
300MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
BUT11-S
Bourns Inc.

TRANS NPN 400V 5A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Power - Max: 100W
  • Frequency - Transition: 12MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고6,272
5A
400V
1.5V @ 600mA, 3A
50µA
20 @ 500mA, 5V
100W
12MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
PN3565_D26Z
Fairchild/ON Semiconductor

TRANS NPN 25V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,888
500mA
25V
350mV @ 100µA, 1mA
50nA (ICBO)
150 @ 1mA, 10V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PN2222A_J61Z
Fairchild/ON Semiconductor

TRANS NPN 40V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고7,280
1A
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
625mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NSCT3904LT1G
ON Semiconductor

TRANS NPN 40V 0.2A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고7,712
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
225mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
NSCT2222ALT1G
ON Semiconductor

TRANS NPN 40V 0.6A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 225mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고6,032
600mA
40V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
225mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
ZTX1149ASTOA
Diodes Incorporated

TRANS PNP 25V 3A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 135MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
패키지: E-Line-3, Formed Leads
재고7,744
3A
25V
300mV @ 70mA, 3A
100nA
250 @ 500mA, 2V
1W
135MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
FMMTL720TC
Diodes Incorporated

TRANS PNP 40V 1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,336
1A
40V
300mV @ 100mA, 1A
10nA
200 @ 500mA, 5V
500mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC557B_D11Z
Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,248
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC859CMTF
Fairchild/ON Semiconductor

TRANS PNP 30V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 310mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,344
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
310mW
150MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot TIP48
STMicroelectronics

TRANS NPN 300V 1A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
  • Power - Max: 2W
  • Frequency - Transition: 10MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고34,764
1A
300V
1V @ 200mA, 1A
1mA
30 @ 300mA, 10V
2W
10MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot 2N5771
Fairchild/ON Semiconductor

TRANS PNP 15V 0.2A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고6,060,000
200mA
15V
600mV @ 5mA, 50mA
10nA
50 @ 10mA, 300mV
350mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
JAN2N3440L
Microsemi Corporation

TRANS NPN 250V 1A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
패키지: TO-205AA, TO-5-3 Metal Can
재고2,368
1A
250V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
TIP29C-BP
Micro Commercial Co

TRANS NPN 100V 1A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 30W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고2,576
1A
100V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
30W
3MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot BD135-16
STMicroelectronics

TRANS NPN 45V 1.5A SOT-32

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32
패키지: TO-225AA, TO-126-3
재고16,068
1.5A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32
NSV2SC5658M3T5G
ON Semiconductor

TRANS NPN 50V 0.15A SOT723

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 260mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
패키지: SOT-723
재고2,000
150mA
50V
400mV @ 5mA, 50mA
500nA (ICBO)
120 @ 1mA, 6V
260mW
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
BC807-25W,135
Nexperia USA Inc.

TRANS PNP 45V 0.5A SOT323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
패키지: SC-70, SOT-323
재고7,392
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
200mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
MMBT3904VL
Nexperia USA Inc.

MMBT3904/SOT23/TO-236AB

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,808
-
-
-
-
-
-
-
-
-
-
-
BC559CTA
Fairchild/ON Semiconductor

TRANS PNP 30V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,424
100mA
30V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot KSC945CGTA
Fairchild/ON Semiconductor

TRANS NPN 50V 0.15A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고146,304
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 1mA, 6V
250mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BU508AF
STMicroelectronics

TRANS NPN 700V 8A ISOWATT218FX

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1.6A, 4.5A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Power - Max: 50W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOWATT218FX
  • Supplier Device Package: ISOWATT-218FX
패키지: ISOWATT218FX
재고26,880
8A
700V
1V @ 1.6A, 4.5A
200µA
10 @ 100mA, 5V
50W
-
150°C (TJ)
Through Hole
ISOWATT218FX
ISOWATT-218FX
PBHV9414ZX
Nexperia USA Inc.

TRANS PNP 140V 4A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 650mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고3,776
4A
140V
550mV @ 400mA, 4A
100nA
100 @ 10mA, 5V
650mW
-
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
PBSS4240ZF
Nexperia USA Inc.

TRANS NPN 40V 2A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Power - Max: 650mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고2,560
2A
40V
550mV @ 200mA, 2A
100nA
300 @ 1mA, 5V
650mW
150MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SAR544RTL
Rohm Semiconductor

TRANS PNP 80V 2.5A TSMT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 1W
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
패키지: SC-96
재고4,416
2.5A
80V
400mV @ 50mA, 1A
1µA (ICBO)
120 @ 100mA, 3V
1W
280MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
2SCR512RTL
Rohm Semiconductor

TRANS NPN 30V 2A TSMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 320MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: TSMT3
패키지: SC-96
재고3,488
2A
30V
400mV @ 35mA, 700mA
1µA (ICBO)
200 @ 100mA, 2V
1W
320MHz
150°C (TJ)
Surface Mount
SC-96
TSMT3
hot MJD32T4G
ON Semiconductor

TRANS PNP 40V 3A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고406,788
3A
40V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
1.56W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
PBHV9040T,215
Nexperia USA Inc.

TRANS PNP 400V 0.25A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 250mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 55MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고91,986
250mA
400V
200mV @ 20mA, 100mA
100nA
80 @ 100mA, 10V
300mW
55MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)