페이지 70 - 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR 158L3 E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSLP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고7,712	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-101, SOT-883	PG-TSLP-3
DDTC144GKA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,608	100mA	50V	-	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
PDTA144ES,126	NXP	TRANS PREBIAS PNP 500MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,064	100mA	50V	47k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
UNR42170RA	Panasonic Electronic Components	TRANS PREBIAS NPN 300MW NS-B1 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	패키지: NS-B1	재고5,840	100mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	300mW	Through Hole	NS-B1	NS-B1
SDTA114YET1G	ON Semiconductor	TRANS PREBIAS PNP 0.2W SC75-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	패키지: SC-75, SOT-416	재고6,944	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	200mW	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
MUN2140T1G	ON Semiconductor	TRANS PREBIAS PNP 0.23W SC59 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: TO-236-3, SC-59, SOT-23-3	재고4,896	100mA	50V	47k	-	120 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
DTA144TM3T5G	ON Semiconductor	TRANS PREBIAS PNP 260MW SOT723 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 260mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	패키지: SOT-723	재고2,640	100mA	50V	47k	-	120 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	260mW	Surface Mount	SOT-723	SOT-723
DTA144WM3T5G	ON Semiconductor	TRANS PREBIAS PNP 260MW SOT723 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 260mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	패키지: SOT-723	재고2,576	100mA	50V	47k	22k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	260mW	Surface Mount	SOT-723	SOT-723
RN2307(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	패키지: SC-70, SOT-323	재고3,760	100mA	50V	10k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SC-70, SOT-323	USM
DTA043TEBTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.15W SC89 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	패키지: SC-89, SOT-490	재고6,864	100mA	50V	4.7k	-	100 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTA123EMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 150MW VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	패키지: SOT-723	재고2,352	100mA	50V	2.2k	2.2k	20 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VMT3
DDTB142JC-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,520	500mA	50V	470	10k	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DTC044EEBTL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.15W SC89 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	패키지: SC-89, SOT-490	재고6,832	30mA	50V	47k	47k	80 @ 5mA, 10V	150mV @ 500µA, 5mA	-	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
UNR51ANG0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고26,742	80mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	SC-85	SMini3-F2
UNR51AMG0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고24,960	80mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	SC-85	SMini3-F2
DTA114EUA-TP	Micro Commercial Co	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고23,406	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DRA5143T0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	패키지: SC-85	재고25,470	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
BCR533E6327HTSA1	Infineon Technologies	TRANS PREBIAS NPN 0.33W SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고88,956	500mA	50V	10k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
DTC124EUAT106	Rohm Semiconductor	TRANS PREBIAS NPN 200MW UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고54,000	30mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	UMT3
RN2302-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	Request a Quote	100 mA	50 V	10 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
SMMUN2134LT1G-M01	onsemi	TRANS PREBIAS PNP 50V SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	100 mA	50 V	22 kOhms	47 kOhms	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	246 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SC3917	onsemi	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 40mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: 3-SPA	패키지: -	Request a Quote	500 mA	50 V	4.7 kOhms	4.7 kOhms	50 @ 20mA, 5V	300mV @ 2mA, 40mA	500nA	250 MHz	300 mW	Through Hole	3-SSIP	3-SPA
DTA123YCAHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고4,785	100 mA	-	2.2 kOhms	10 kOhms	33 @ 10mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
MUN2234T1	onsemi	TRANS BRT NPN 100MA 50V SC-59 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DTC114WUA-HF	Comchip Technology	TRANS PREBIAS NPN 0.1A SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	-	10 kOhms	4.7 kOhms	24 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
RN2313-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	재고9,000	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
HR1F3P-0-T1-AZ	Renesas	TRANS PREBIAS PNP 60V 1A SC62 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Resistor - Base (R1) (Ohms): 2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 500mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: - Power - Max: 2 W Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SC-62	패키지: -	Request a Quote	1 A	60 V	2 kOhms	10 kOhms	100 @ 500mA, 2V	350mV @ 10mA, 500mA	100nA	-	2 W	Surface Mount	TO-243AA	SC-62
PDTA124EQCZ	Nexperia USA Inc.	TRANS PREBIAS PNP 50V 0.1A 3DFN Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 180 MHz Power - Max: 360 mW Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	패키지: -	재고15,000	100 mA	50 V	22 kOhms	22 kOhms	60 @ 5mA, 5V	100mV @ 500µA, 10mA	100nA	180 MHz	360 mW	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
DTB543ZE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 12V 0.5A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 260 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고9,000	500 mA	12 V	4.7 kOhms	47 kOhms	140 @ 100mA, 2V	300mV @ 5mA, 100mA	500nA	260 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
KSR1101MTF	Fairchild Semiconductor	TRANS PREBIAS NPN 50V SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	100 mA	50 V	4.7 kOhms	4.7 kOhms	20 @ 10mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

BCR 158L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고7,712

100mA

50V

2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-101, SOT-883

PG-TSLP-3

DDTC144GKA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,608

100mA

50V

-

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59-3

PDTA144ES,126

NXP

TRANS PREBIAS PNP 500MW TO92-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,064

100mA

50V

47k

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

500mW

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

UNR42170RA

Panasonic Electronic Components

TRANS PREBIAS NPN 300MW NS-B1

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

패키지: NS-B1

재고5,840

100mA

50V

22k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

300mW

Through Hole

NS-B1

SDTA114YET1G

ON Semiconductor

TRANS PREBIAS PNP 0.2W SC75-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

패키지: SC-75, SOT-416

재고6,944

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

200mW

Surface Mount

SC-75, SOT-416

MUN2140T1G

ON Semiconductor

TRANS PREBIAS PNP 0.23W SC59

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

재고4,896

100mA

50V

47k

-

120 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

230mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

DTA144TM3T5G

ON Semiconductor

TRANS PREBIAS PNP 260MW SOT723

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

패키지: SOT-723

재고2,640

100mA

50V

47k

-

120 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

260mW

Surface Mount

SOT-723

DTA144WM3T5G

ON Semiconductor

TRANS PREBIAS PNP 260MW SOT723

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

패키지: SOT-723

재고2,576

100mA

50V

47k

22k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

260mW

Surface Mount

SOT-723

RN2307(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

패키지: SC-70, SOT-323

재고3,760

100mA

50V

10k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

100mW

Surface Mount

SC-70, SOT-323

USM

DTA043TEBTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

패키지: SC-89, SOT-490

재고6,864

100mA

50V

4.7k

-

100 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTA123EMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 150MW VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

패키지: SOT-723

재고2,352

100mA

50V

2.2k

20 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-723

VMT3

DDTB142JC-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,520

500mA

50V

470

10k

56 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

DTC044EEBTL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.15W SC89

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

패키지: SC-89, SOT-490

재고6,832

30mA

50V

47k

80 @ 5mA, 10V

150mV @ 500µA, 5mA

-

250MHz

150mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

UNR51ANG0L

Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고26,742

80mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

SC-85

SMini3-F2

UNR51AMG0L

Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고24,960

80mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

SC-85

SMini3-F2

DTA114EUA-TP

Micro Commercial Co

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고23,406

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DRA5143T0L

Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B

패키지: SC-85

재고25,470

100mA

50V

4.7k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

SC-85

SMini3-F2-B

BCR533E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.33W SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고88,956

500mA

50V

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

DTC124EUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고54,000

30mA

50V

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

UMT3

RN2302-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

Request a Quote

100 mA

50 V

10 kOhms

50 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200 MHz

100 mW

Surface Mount

SC-70, SOT-323

SC-70

SMMUN2134LT1G-M01

onsemi

TRANS PREBIAS PNP 50V SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 246 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

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100 mA

50 V

22 kOhms

47 kOhms

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

246 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SC3917

onsemi

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 40mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: 3-SPA

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500 mA

50 V

4.7 kOhms

50 @ 20mA, 5V

300mV @ 2mA, 40mA

500nA

250 MHz

300 mW

Through Hole

3-SSIP

3-SPA

DTA123YCAHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고4,785

100 mA

-

2.2 kOhms

10 kOhms

33 @ 10mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

MUN2234T1

onsemi

TRANS BRT NPN 100MA 50V SC-59

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

DTC114WUA-HF

Comchip Technology

TRANS PREBIAS NPN 0.1A SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

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100 mA

-

10 kOhms

4.7 kOhms

24 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

SOT-323

RN2313-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

재고9,000

100 mA

50 V

47 kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200 MHz

100 mW

Surface Mount

SC-70, SOT-323

SC-70

HR1F3P-0-T1-AZ

Renesas

TRANS PREBIAS PNP 60V 1A SC62

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Resistor - Base (R1) (Ohms): 2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 500mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: -
Power - Max: 2 W
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SC-62

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1 A

60 V

2 kOhms

10 kOhms

100 @ 500mA, 2V

350mV @ 10mA, 500mA

100nA

-

2 W

Surface Mount

TO-243AA

SC-62

PDTA124EQCZ

Nexperia USA Inc.

TRANS PREBIAS PNP 50V 0.1A 3DFN

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

패키지: -

재고15,000

100 mA

50 V

22 kOhms

60 @ 5mA, 5V

100mV @ 500µA, 10mA

100nA

180 MHz

360 mW

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

DTB543ZE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 12V 0.5A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고9,000

500 mA

12 V

4.7 kOhms

47 kOhms

140 @ 100mA, 2V

300mV @ 5mA, 100mA

500nA

260 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

KSR1101MTF

Fairchild Semiconductor

TRANS PREBIAS NPN 50V SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

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100 mA

50 V

4.7 kOhms

20 @ 10mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23